Patents by Inventor Chih-Hung Su

Chih-Hung Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11980694
    Abstract: A sterilization apparatus for a portable electronic device including a cabinet and a carrier is provided. The carrier includes a base slidably disposed on the cabinet, multiple first positioning elements and multiple second positioning elements disposed in parallel on the base, multiple sterilization light sources corresponding to the second positioning elements and multiple pressure sensors disposed in parallel in the base. The base is configured to carry at least one portable electronic device. One second positioning element is disposed between any two adjacent first positioning elements, and any first positioning element and any second positioning element adjacent to each other are separated by a positioning space. The pressure sensors are respectively located in the positioning spaces. One sterilization light source is disposed between any two adjacent pressure sensors, and the pressure sensors are configured to sense a pressure from the portable electronic device.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: May 14, 2024
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Yi-Hung Chen, Chih-Wen Chiang, Yun-Tung Pai, Yen-Hua Hsiao, Yao-Kuang Su, Yi-Hsuan Lin, Han-Sheng Siao
  • Patent number: 11948936
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a fin disposed in a first region of the semiconductor device, channel members disposed in a second region of the semiconductor device and stacked in a vertical direction, first and second metal gates disposed on a top surface of the fin, a third metal gate wrapping around each of the channel members, a first implant region in the fin with a first conductivity type, and a second implant region in the fin with a second conductivity opposite the first conductivity type. The fin includes first and second type epitaxial layers alternatingly disposed in the vertical direction. The first and second type epitaxial layers have different material compositions. The first type epitaxial layers and the channel members have the same material composition.
    Type: Grant
    Filed: April 24, 2023
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hung Wang, Chih Chieh Yeh, Zi-Ang Su, Chia-Ju Chou, Ming-Shuan Li
  • Publication number: 20240079051
    Abstract: Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.
    Type: Application
    Filed: November 8, 2022
    Publication date: March 7, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Chih-Sheng Lin, Tuo-Hung Hou, Fu-Cheng Tsai, Jian-Wei Su, Kuo-Hua Tseng
  • Publication number: 20230238422
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.
    Type: Application
    Filed: March 30, 2023
    Publication date: July 27, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
  • Patent number: 11621317
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: April 4, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Cheng Chen, Wei-Li Huang, Chun-Yi Wu, Kuang-Yi Wu, Hon-Lin Huang, Chih-Hung Su, Chin-Yu Ku, Chen-Shien Chen
  • Publication number: 20220293494
    Abstract: A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.
    Type: Application
    Filed: May 30, 2022
    Publication date: September 15, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Patent number: 11387168
    Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: July 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Publication number: 20210376054
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.
    Type: Application
    Filed: August 16, 2021
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
  • Patent number: 11094776
    Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: August 17, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Cheng Chen, Wei-Li Huang, Chun-Yi Wu, Kuang-Yi Wu, Hon-Lin Huang, Chih-Hung Su, Chin-Yu Ku, Chen-Shien Chen
  • Publication number: 20200343162
    Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Patent number: 10741477
    Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 11, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Publication number: 20200075448
    Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.
    Type: Application
    Filed: June 5, 2019
    Publication date: March 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
  • Publication number: 20190295925
    Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
    Type: Application
    Filed: March 23, 2018
    Publication date: September 26, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Lung Yang, CHIH-HUNG Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Patent number: 9536688
    Abstract: A press button device includes a button unit having a main body with a surrounding wall, and an actuating member protruding from an inner side of the main body for actuating a control switch. A flexible connection unit includes a button-coupling portion connected to the surrounding wall in an airtight manner, a fixed portion radially spaced apart from and surrounding the button-coupling portion, and a deformable portion interconnecting the button-coupling and fixed portions. The deformable portion is elastically displaced relative to the fixed portion when the button unit is pressed, and restores the button unit to its original position when the pressing force thereon is removed.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: January 3, 2017
    Assignees: Lite-On Electronics (Gaungzhou) Limited, Lite-On Technology Corp.
    Inventor: Chih-Hung Su
  • Publication number: 20140072147
    Abstract: A press button device includes a button unit having a main body with a surrounding wall, and an actuating member protruding from an inner side of the main body for actuating a control switch. A flexible connection unit includes a button-coupling portion connected to the surrounding wall in an airtight manner, a fixed portion radially spaced apart from and surrounding the button-coupling portion, and a deformable portion interconnecting the button-coupling and fixed portions. The deformable portion is elastically displaced relative to the fixed portion when the button unit is pressed, and restores the button unit to its original position when the pressing force thereon is removed.
    Type: Application
    Filed: May 2, 2013
    Publication date: March 13, 2014
    Applicants: LITE-ON TECHNOLOGY CORP., LITE-ON ELECTRONICS (GUANGZHOU) LIMITED
    Inventor: CHIH-HUNG SU
  • Patent number: 8508921
    Abstract: A housing assembly having a housing and a clip. The housing has a pair of raised ridge portions and a first locking portion formed between the pair of raised ridge portions. Each of the pair of raised ridge portions has an undercut side wall and the undercut side wall defines a sliding groove. Additionally, the pair of raised ridge portions has a first entrance port and a second entrance port at two ends thereof. The clip has an insertion portion, a bent portion and a clamp portion. The insertion portion has side edges for inserting within the pair of raised ridge portions through either of the first entrance port and the second entrance port and a second locking portion.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: August 13, 2013
    Assignee: Lite-On Technology Corporation
    Inventor: Chih-Hung Su
  • Publication number: 20120212884
    Abstract: A housing assembly having a housing and a clip. The housing has a pair of raised ridge portions and a first locking portion formed between the pair of raised ridge portions. Each of the pair of raised ridge portions has an undercut side wall and the undercut side wall defines a sliding groove. Additionally, the pair of raised ridge portions has a first entrance port and a second entrance port at two ends thereof. The clip has an insertion portion, a bent portion and a clamp portion. The insertion portion has side edges for inserting within the pair of raised ridge portions through either of the first entrance port and the second entrance port and a second locking portion.
    Type: Application
    Filed: February 22, 2011
    Publication date: August 23, 2012
    Applicant: LITE-ON TECHNOLOGY CORPORATION
    Inventor: Chih-Hung SU
  • Publication number: 20100296946
    Abstract: A pressure sensing device for an electronic device includes a pressure sensing unit, a control unit, and an alarm unit. The pressure sensing unit is installed in the electronic device, and used for detecting fluid pressure to generate a pressure signal. The control unit is coupled to the pressure sensing unit, and used for determining variation in the fluid pressure in the electronic device according to the pressure signal and generating a control signal. The alarm unit is coupled to the control unit, and used for outputting an alarm signal according to the control signal to execute an alarm function.
    Type: Application
    Filed: April 29, 2010
    Publication date: November 25, 2010
    Inventors: Ming-Chih Chen, Jung-Chun Kuo, Chih-Hung Su, Yung-Li Jang, Ming-Che Lee, Ya-Lin Hsiao
  • Patent number: 7695337
    Abstract: An organic light-emitting diode and method of fabricating the same. The organic light-emitting diode includes a first substrate, a first electrode installed on an inner surface of the first substrate, an organic light-emitting layer installed on the first electrode, a second electrode installed on the organic light-emitting layer, an oxide layer formed on the second electrode, and a second substrate bound to the inner surface of the first substrate to form an airtight space.
    Type: Grant
    Filed: December 8, 2008
    Date of Patent: April 13, 2010
    Assignee: AU Optronics Corp.
    Inventor: Chih-Hung Su
  • Patent number: 7552624
    Abstract: A method for detecting moisture in a display device having at least one display element includes incorporating at least one moisture detector in a predetermined location of the display device, the moisture detector including a material layer comprising metal formed between a first electrode and a second electrode. One or more display elements are encapsulated between a first and second shields. A resistance of the material layer is detected so as to determine a level of moisture.
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: June 30, 2009
    Assignee: Au Optronics Corporation
    Inventors: Chun-Yi Chiu, Chih-Hung Su