Patents by Inventor Chih-Hung Su
Chih-Hung Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11980694Abstract: A sterilization apparatus for a portable electronic device including a cabinet and a carrier is provided. The carrier includes a base slidably disposed on the cabinet, multiple first positioning elements and multiple second positioning elements disposed in parallel on the base, multiple sterilization light sources corresponding to the second positioning elements and multiple pressure sensors disposed in parallel in the base. The base is configured to carry at least one portable electronic device. One second positioning element is disposed between any two adjacent first positioning elements, and any first positioning element and any second positioning element adjacent to each other are separated by a positioning space. The pressure sensors are respectively located in the positioning spaces. One sterilization light source is disposed between any two adjacent pressure sensors, and the pressure sensors are configured to sense a pressure from the portable electronic device.Type: GrantFiled: May 13, 2021Date of Patent: May 14, 2024Assignee: COMPAL ELECTRONICS, INC.Inventors: Yi-Hung Chen, Chih-Wen Chiang, Yun-Tung Pai, Yen-Hua Hsiao, Yao-Kuang Su, Yi-Hsuan Lin, Han-Sheng Siao
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Patent number: 11948936Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a fin disposed in a first region of the semiconductor device, channel members disposed in a second region of the semiconductor device and stacked in a vertical direction, first and second metal gates disposed on a top surface of the fin, a third metal gate wrapping around each of the channel members, a first implant region in the fin with a first conductivity type, and a second implant region in the fin with a second conductivity opposite the first conductivity type. The fin includes first and second type epitaxial layers alternatingly disposed in the vertical direction. The first and second type epitaxial layers have different material compositions. The first type epitaxial layers and the channel members have the same material composition.Type: GrantFiled: April 24, 2023Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hung Wang, Chih Chieh Yeh, Zi-Ang Su, Chia-Ju Chou, Ming-Shuan Li
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Publication number: 20240079051Abstract: Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.Type: ApplicationFiled: November 8, 2022Publication date: March 7, 2024Applicant: Industrial Technology Research InstituteInventors: Chih-Sheng Lin, Tuo-Hung Hou, Fu-Cheng Tsai, Jian-Wei Su, Kuo-Hua Tseng
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Publication number: 20230238422Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.Type: ApplicationFiled: March 30, 2023Publication date: July 27, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
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Patent number: 11621317Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.Type: GrantFiled: August 16, 2021Date of Patent: April 4, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Cheng Chen, Wei-Li Huang, Chun-Yi Wu, Kuang-Yi Wu, Hon-Lin Huang, Chih-Hung Su, Chin-Yu Ku, Chen-Shien Chen
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Publication number: 20220293494Abstract: A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.Type: ApplicationFiled: May 30, 2022Publication date: September 15, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Patent number: 11387168Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.Type: GrantFiled: July 9, 2020Date of Patent: July 12, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Publication number: 20210376054Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
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Patent number: 11094776Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.Type: GrantFiled: June 5, 2019Date of Patent: August 17, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chi-Cheng Chen, Wei-Li Huang, Chun-Yi Wu, Kuang-Yi Wu, Hon-Lin Huang, Chih-Hung Su, Chin-Yu Ku, Chen-Shien Chen
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Publication number: 20200343162Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.Type: ApplicationFiled: July 9, 2020Publication date: October 29, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Patent number: 10741477Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.Type: GrantFiled: March 23, 2018Date of Patent: August 11, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Publication number: 20200075448Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.Type: ApplicationFiled: June 5, 2019Publication date: March 5, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
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Publication number: 20190295925Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.Type: ApplicationFiled: March 23, 2018Publication date: September 26, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Lung Yang, CHIH-HUNG Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
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Patent number: 9536688Abstract: A press button device includes a button unit having a main body with a surrounding wall, and an actuating member protruding from an inner side of the main body for actuating a control switch. A flexible connection unit includes a button-coupling portion connected to the surrounding wall in an airtight manner, a fixed portion radially spaced apart from and surrounding the button-coupling portion, and a deformable portion interconnecting the button-coupling and fixed portions. The deformable portion is elastically displaced relative to the fixed portion when the button unit is pressed, and restores the button unit to its original position when the pressing force thereon is removed.Type: GrantFiled: May 2, 2013Date of Patent: January 3, 2017Assignees: Lite-On Electronics (Gaungzhou) Limited, Lite-On Technology Corp.Inventor: Chih-Hung Su
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Publication number: 20140072147Abstract: A press button device includes a button unit having a main body with a surrounding wall, and an actuating member protruding from an inner side of the main body for actuating a control switch. A flexible connection unit includes a button-coupling portion connected to the surrounding wall in an airtight manner, a fixed portion radially spaced apart from and surrounding the button-coupling portion, and a deformable portion interconnecting the button-coupling and fixed portions. The deformable portion is elastically displaced relative to the fixed portion when the button unit is pressed, and restores the button unit to its original position when the pressing force thereon is removed.Type: ApplicationFiled: May 2, 2013Publication date: March 13, 2014Applicants: LITE-ON TECHNOLOGY CORP., LITE-ON ELECTRONICS (GUANGZHOU) LIMITEDInventor: CHIH-HUNG SU
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Patent number: 8508921Abstract: A housing assembly having a housing and a clip. The housing has a pair of raised ridge portions and a first locking portion formed between the pair of raised ridge portions. Each of the pair of raised ridge portions has an undercut side wall and the undercut side wall defines a sliding groove. Additionally, the pair of raised ridge portions has a first entrance port and a second entrance port at two ends thereof. The clip has an insertion portion, a bent portion and a clamp portion. The insertion portion has side edges for inserting within the pair of raised ridge portions through either of the first entrance port and the second entrance port and a second locking portion.Type: GrantFiled: February 22, 2011Date of Patent: August 13, 2013Assignee: Lite-On Technology CorporationInventor: Chih-Hung Su
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Publication number: 20120212884Abstract: A housing assembly having a housing and a clip. The housing has a pair of raised ridge portions and a first locking portion formed between the pair of raised ridge portions. Each of the pair of raised ridge portions has an undercut side wall and the undercut side wall defines a sliding groove. Additionally, the pair of raised ridge portions has a first entrance port and a second entrance port at two ends thereof. The clip has an insertion portion, a bent portion and a clamp portion. The insertion portion has side edges for inserting within the pair of raised ridge portions through either of the first entrance port and the second entrance port and a second locking portion.Type: ApplicationFiled: February 22, 2011Publication date: August 23, 2012Applicant: LITE-ON TECHNOLOGY CORPORATIONInventor: Chih-Hung SU
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Publication number: 20100296946Abstract: A pressure sensing device for an electronic device includes a pressure sensing unit, a control unit, and an alarm unit. The pressure sensing unit is installed in the electronic device, and used for detecting fluid pressure to generate a pressure signal. The control unit is coupled to the pressure sensing unit, and used for determining variation in the fluid pressure in the electronic device according to the pressure signal and generating a control signal. The alarm unit is coupled to the control unit, and used for outputting an alarm signal according to the control signal to execute an alarm function.Type: ApplicationFiled: April 29, 2010Publication date: November 25, 2010Inventors: Ming-Chih Chen, Jung-Chun Kuo, Chih-Hung Su, Yung-Li Jang, Ming-Che Lee, Ya-Lin Hsiao
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Patent number: 7695337Abstract: An organic light-emitting diode and method of fabricating the same. The organic light-emitting diode includes a first substrate, a first electrode installed on an inner surface of the first substrate, an organic light-emitting layer installed on the first electrode, a second electrode installed on the organic light-emitting layer, an oxide layer formed on the second electrode, and a second substrate bound to the inner surface of the first substrate to form an airtight space.Type: GrantFiled: December 8, 2008Date of Patent: April 13, 2010Assignee: AU Optronics Corp.Inventor: Chih-Hung Su
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Patent number: 7552624Abstract: A method for detecting moisture in a display device having at least one display element includes incorporating at least one moisture detector in a predetermined location of the display device, the moisture detector including a material layer comprising metal formed between a first electrode and a second electrode. One or more display elements are encapsulated between a first and second shields. A resistance of the material layer is detected so as to determine a level of moisture.Type: GrantFiled: May 9, 2007Date of Patent: June 30, 2009Assignee: Au Optronics CorporationInventors: Chun-Yi Chiu, Chih-Hung Su