Abstract: A memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. The read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line, and a source terminal of the read transistor coupled to a first node. The write transistor is configured to adjust a polarization state of the read transistor, the polarization state corresponding to a stored data value of the memory cell.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.

Abstract: This disclosure relates to a surgical tool configured for holding an implant includes an inner rod and a sleeve. The inner rod includes a rod portion and a holding portion. The holding portion is located at one end of the rod portion and has a first accommodation space configured for accommodating at least part of the implant. The sleeve includes a sleeving portion and a retaining portion. The sleeving portion is slidably sleeved on the rod portion of the inner rod. The retaining portion is located at one end of the sleeving portion and selectively presses against the holding portion. The inner rod further includes at least one fin portion protruded from the holding portion and located in the first accommodation space for being inserted into at least one slot of the implant.

Abstract: A display device includes: a display panel including a first substrate with a first surface and a second substrate disposed on the first surface; a third substrate, wherein the second substrate is disposed between the first substrate and the third substrate, and the third substrate has a second surface facing the first surface; an adhesion element disposed on the first surface and adjacent to the second substrate, wherein the adhesion element has a first through hole; and a filler disposed in the first through hole and in contact with the first surface and the second surface. The first through hole of the adhesion element has an area defined as a first area, the filler has a region in contact with the second surface, and an area of the region is defined as a second area. The ratio of the first area to the second area ranges from 0.5 to 0.99.

Abstract: A display device includes: a display panel including a first substrate with a first surface and a second substrate disposed on the first surface; a third substrate, wherein the second substrate is disposed between the first substrate and the third substrate, and the third substrate has a second surface facing the first surface; an adhesion element disposed on the first surface and adjacent to the second substrate, wherein the adhesion element has a first through hole; and a filler disposed in the first through hole and in contact with the first surface and the second surface. The first through hole of the adhesion element has an area defined as a first area, the filler has a region in contact with the second surface, and an area of the region is defined as a second area. The ratio of the first area to the second area ranges from 0.5 to 0.99.

Abstract: A memory heat sink device having an enlarged heat dissipating area is provided. The memory heat sink device includes two cooling fins that are respectively attached to a front side and a back side of a memory. Raised dots are protruded from a front (or back) side of the cooling fin attached to the front (or back) side of the memory. Each of the raised dots on the cooling fin has at least one sectional area and at least one connection portion. Thus, the heat sink area of the cooling fin increases and heat generated by the memory is easily dissipated by the sectional area through thermal convection.

Abstract: A memory heat sink device provided with an extra heat sink area includes two cooling fins that are respectively attached to the front and back sides of a memory. A plurality of raised dots that protrude toward the front side are formed on the cooling fin attached to the front side of the memory. Each of the raised dots and the cooling fin has at least one sectional area and one connection portion. Thus, the heat sink area of cooling fin increases and the sectional area is used to easily dissipate heat generated by the memory in the manner of convection.