Patents by Inventor Chih-Kang Shih
Chih-Kang Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11977256Abstract: Various embodiments of the present disclosure are directed towards a semiconductor package comprising optically coupled integrated circuit (IC) chips. A first IC chip and a second IC chip overlie a substrate at a center of the substrate. A photonic chip overlies the first and second IC chips and is electrically coupled to the second IC chip. A laser device chip overlies the substrate, adjacent to the photonic chip and the second IC chip, at a periphery of the substrate. The photonic chip is configured to modulate a laser beam from the laser device chip in accordance with an electrical signal from the second IC chip and to provide the modulated laser beam to the first IC chip. This facilitates optical communication between the first IC chip to the second IC chip. Various embodiments of the present disclosure are further directed towards simultaneously aligning and bonding constituents of the semiconductor package.Type: GrantFiled: May 23, 2022Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Tsung Shih, Hau-Yan Lu, Wei-Kang Liu, Yingkit Felix Tsui
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Patent number: 11967546Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.Type: GrantFiled: July 21, 2022Date of Patent: April 23, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shang-Yun Hou, Hsien-Pin Hu, Sao-Ling Chiu, Wen-Hsin Wei, Ping-Kang Huang, Chih-Ta Shen, Szu-Wei Lu, Ying-Ching Shih, Wen-Chih Chiou, Chi-Hsi Wu, Chen-Hua Yu
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Patent number: 10071116Abstract: The present invention relatives to a method for manufacturing hydrogen-saturated deuterium-depleted water, comprising (a) providing a distilled or mineral water; (b) providing a hydrogen storage apparatus for providing a high purity hydrogen; (c) controlling a pressure of hydrogen gas between 3˜8 bar at a working environment temperature of 10˜28° C.; (d) controlling a flow velocity of hydrogen gas between 3˜5 L/min and inletting hydrogen into the distilled or mineral water to produce a pressure difference to replace deuterium from the distilled water; and (e) controlling a working time between 30˜90 mins to produce a hydrogen-saturated deuterium-depleted water. Therefore, a method for manufacturing hydrogen-saturated deuterium-depleted water with low consuming energy and low production cost is provided.Type: GrantFiled: August 24, 2016Date of Patent: September 11, 2018Assignee: H BANK TECHNOLOGY INC.Inventors: I-Hsin An, Chih-Kang Shih
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Publication number: 20170056440Abstract: The present invention relatives to a method for manufacturing hydrogen-saturated deuterium-depleted water, comprising (a) providing a distilled or mineral water; (b) providing a hydrogen storage apparatus for providing a high purity hydrogen; (c) controlling a pressure of hydrogen gas between 3˜8 bar at a working environment temperature of 10˜28° C.; (d) controlling a flow velocity of hydrogen gas between 3˜5 L/min and inletting hydrogen into the distilled or mineral water to produce a pressure difference to replace deuterium from the distilled water; and (e) controlling a working time between 30˜90 mins to produce a hydrogen-saturated deuterium-depleted water. Therefore, a method for manufacturing hydrogen-saturated deuterium-depleted water with low consuming energy and low production cost is provided.Type: ApplicationFiled: August 24, 2016Publication date: March 2, 2017Inventors: I-HSIN AN, Chih-Kang SHIH
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Patent number: 7749656Abstract: The invention provides a hydrogen storage alloy, and in particular, the hydrogen storage alloy according to the invention has a narrow hysteresis and a maximum hydrogen concentration, (H/Lm (NixAlyMoz)), equal to 7. The hydrogen storage alloy, according to the invention, is an ABw type alloy and represented by the general formula: Lm(NixAlyMoz), and where 4.7?w?5.3, Lm is a La-rich misch metal and comprises La, Ce, Pr, and Nd., w=x+y+z, x, y and z are a mole number, respectively.Type: GrantFiled: March 22, 2006Date of Patent: July 6, 2010Inventor: Chih-Kang Shih
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Publication number: 20080231852Abstract: A broadband light source with a sufficiently long coherence length is impinged on the optical cavity. The broadband laser light reflects from the first and second surfaces of the cavity. The two light beams, either reflected or transmitted, are phase shifted from one another by an amount proportional to the optical path length of the cavity and inversely proportional to the wavelength of the light (4?nd/?) The two light beams interfere with each other and form a modulated light beam that has a spectrum approximately like the laser's broadband spectrum multiplied by a cosine with a frequency 4?nd/?. The modulated light beam is coupled to a spectrometer that measures the intensity of the light as a function of wavelength over a range of wavelengths. The Fourier transform of the spectrum contains a peak that is related to the OPL and is located at 2*n*d where n*d is the OPL.Type: ApplicationFiled: October 19, 2007Publication date: September 25, 2008Applicant: Board of Regents, The University of Texas SystemInventors: Chih-Kang Shih, Christopher Frank Wieland, Edward Bradstreet Flagg
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Patent number: 7320726Abstract: The present invention provides a hydrogen storage apparatus comprising a hydrogen storage canister defining a longitudinal axis, at least one first partition, and at least one second partition. The at least one first partition is adapted to divide the hydrogen storage canister into at least one compartment. The at least one second partition is adapted to divide the at least one compartments into a plurality of sub-compartments into which the hydrogen storage alloy is disposed. The at least one second partition comprises a plurality of cells having a cell wall arranged in a honeycomb configuration, and the cell wall of each of the cells is perpendicular to the longitudinal axis. The second partition has a rectangle-shaped or fan-shaped honeycomb configuration. Accordingly, the efficiency of heat transfer is better and the hydrogen storage apparatus is safer when the hydrogen is absorbed or released by the hydrogen storage apparatus.Type: GrantFiled: January 20, 2005Date of Patent: January 22, 2008Inventors: Chih-Kang Shih, George Huang, Vahan Beibutian
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Patent number: 7289220Abstract: A broadband light source with a sufficiently long coherence length is impinged on the optical cavity. The broadband laser light reflects from the first and second surfaces of the cavity. The two light beams, either reflected or transmitted, are phase shifted from one another by an amount proportional to the optical path length of the cavity and inversely proportional to the wavelength of the light (4?nd/?) The two light beams interfere with each other and form a modulated light beam that has a spectrum approximately like the laser's broadband spectrum multiplied by a cosine with a frequency 4?nd/?. The modulated light beam is coupled to a spectrometer that measures the intensity of the light as a function of wavelength over a range of wavelengths. The Fourier transform of the spectrum contains a peak that is related to the OPL and is located at 2*n*d where n*d is the OPL.Type: GrantFiled: October 14, 2005Date of Patent: October 30, 2007Assignee: Board of Regents, The University of Texas SystemInventors: Chih-Kang Shih, Christopher Wieland, Edward Flagg
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Publication number: 20070086018Abstract: A broadband light source with a sufficiently long coherence length is impinged on the optical cavity. The broadband laser light reflects from the first and second surfaces of the cavity. The two light beams, either reflected or transmitted, are phase shifted from one another by an amount proportional to the optical path length of the cavity and inversely proportional to the wavelength of the light (4?nd/?) The two light beams interfere with each other and form a modulated light beam that has a spectrum approximately like the laser's broadband spectrum multiplied by a cosine with a frequency 4?nd/?. The modulated light beam is coupled to a spectrometer that measures the intensity of the light as a function of wavelength over a range of wavelengths. The Fourier transform of the spectrum contains a peak that is related to the OPL and is located at 2*n*d where n*d is the OPL.Type: ApplicationFiled: October 14, 2005Publication date: April 19, 2007Inventors: Chih-Kang Shih, Christopher Wieland, Edward Flagg
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Publication number: 20060216598Abstract: The invention provides a hydrogen storage alloy, and in particular, the hydrogen storage alloy according to the invention has a slight hysteresis and a maximum hydrogen concentration, (H/Lm (NixAlyMoz)), equal to 7. The hydrogen storage alloy, according to the invention, is an ABw type alloy and represented by the general formula: Lm(NixAlyMoz), and where 4.7?w?5.3, Lm is a La-rich misch metal and comprises La, Ce, Pr, and Nd, w=x+y+z, x, y and z are a mole number, respectively.Type: ApplicationFiled: March 22, 2006Publication date: September 28, 2006Inventor: Chih-Kang Shih
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Publication number: 20060144238Abstract: The present invention provides a hydrogen storage apparatus comprising a hydrogen storage canister defining a longitudinal axis, at least one first partition, and at least one second partition. The at least one first partition is adapted to divide the hydrogen storage canister into at least one compartment. The at least one second partition is adapted to divide the at least one compartments into a plurality of sub-compartments into which the hydrogen storage alloy is disposed. The at least one second partition comprises a plurality of cells having a cell wall arranged in a honeycomb configuration, and the cell wall of each of the cells is perpendicular to the longitudinal axis. The second partition has a rectangle-shaped or fan-shaped honeycomb configuration. Accordingly, the efficiency of heat transfer is better and the hydrogen storage apparatus is safer when the hydrogen is absorbed or released by the hydrogen storage apparatus.Type: ApplicationFiled: January 20, 2005Publication date: July 6, 2006Inventors: Chih-Kang Shih, George Huang, Vahan Beibutian
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Publication number: 20060057040Abstract: The invention provides a portable hydrogen supply system for safely storing hydrogen and capable of supplying hydrogen in gaseous form to a hydrogen-using device. The hydrogen supply system includes at least one hydrogen storage canister and a control valve, and provides a port. When the hydrogen supply system, with hydrogen previously absorbed in each hydrogen storage canister, connects with the hydrogen-using device, the hydrogen supply system supplies hydrogen with a stable pressure at the port to the hydrogen-using device, and the pressure of the hydrogen supplied by said system is capable of being changed by adjusted the control valve.Type: ApplicationFiled: December 10, 2004Publication date: March 16, 2006Inventors: Chih-Kang Shih, George Huang, Anne An
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Patent number: 5520769Abstract: A method is provided for measuring at resolutions which are in some instances less than 20 nanometers the concentration densities within one or more diffusion regions within a semiconductor substrate. The diffusion regions are prepared for measurement by cleaving a cross-sectional surface and polishing that surface to a substantially flat, exposed profile. The profile is purposefully pre-etched to remove oxide abutting the implant area and thereafter dopant-selective etched in accordance with concentration densities within the substrate. Pre-etching of oxide and concentration density etching of doped silicon provides an exposed topological contour measurable by atomic force microscopy (AFM). AFM can detect the entire cross-sectional surface including conductors and dielectrics. The topological height of impurity region profiles of a calibration wafer are correlated to impurity concentrations to form a calibration curve.Type: GrantFiled: December 7, 1994Date of Patent: May 28, 1996Assignee: Advanced Micro Devices, Inc.Inventors: Michael C. Barrett, Chih-Kang Shih, Donald A. Tiffin, Ying Li, Michael J. Dennis