Patents by Inventor Chih-Lung Cheng
Chih-Lung Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11972957Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.Type: GrantFiled: July 31, 2020Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-chun Yang, Chih-Lung Cheng, Yi-Ming Lin, Po-Chih Huang, Yu-Hsiang Juan, Xuan-Yang Zheng
-
Publication number: 20230268367Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.Type: ApplicationFiled: April 28, 2023Publication date: August 24, 2023Inventors: Tsung-Wei HUANG, Chao-Ching CHANG, Yun-Wei CHENG, Chih-Lung CHENG, Yen-Chang CHEN, Wen-Jen TSAI, Cheng Han LIN, Yu-Hsun CHIH, Sheng-Chan LI, Sheng-Chau CHEN
-
Publication number: 20230197421Abstract: A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.Type: ApplicationFiled: February 22, 2023Publication date: June 22, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Po-Wei LIANG, Chu-Han HSIEH, Chih-Lung CHENG, Po-Chih HUANG
-
Patent number: 11652124Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.Type: GrantFiled: October 14, 2020Date of Patent: May 16, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Wei Huang, Chao-Ching Chang, Yun-Wei Cheng, Chih-Lung Cheng, Yen-Chang Chen, Wen-Jen Tsai, Cheng Han Lin, Yu-Hsun Chih, Sheng-Chan Li, Sheng-Chau Chen
-
Publication number: 20230069237Abstract: The present disclosure provides a method and a system therefore for processing wafer. The method includes: extracting a first gas from a chamber via a first route; blocking a second route used to be pumped down to chuck a wafer placed in the chamber, wherein the second route connects the chamber and the first route; and providing a second gas via a third route to purge a junction of the first route and the second route.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: SHENG-CHUN YANG, CHIH-LUNG CHENG, YI-MING LIN, PO-CHIH HUANG, YU-HSIANG JUAN, XUAN-YANG ZHENG, REN-JYUE WANG, CHIH-YUAN WANG
-
Publication number: 20230067115Abstract: A system and method for generating a gas curtain over an access port of a processing chamber for a semiconductor substrate. A gas flow stabilizer and a gas flow receiver, each including a horizontal flow section and a vertical flow section cooperate to generate a gas curtain that impedes gas, e.g., oxygen, from outside the processing chamber, from flowing into the chamber, for example, when the access port is opened to add/or to remove a workpiece from the processing chamber.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Sheng-chun YANG, Po-Chih HUANG, Chih-Lung CHENG, Yi-Ming LIN, Chen-Hao LIAO, Min-Cheng CHUNG
-
Patent number: 11594401Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.Type: GrantFiled: February 25, 2020Date of Patent: February 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun Yang, Yi-Ming Lin, Po-Wei Liang, Chu-Han Hsieh, Chih-Lung Cheng, Po-Chih Huang
-
Publication number: 20220384239Abstract: A wafer fabricating system includes a wafer chuck, a gas inlet port, a fluid inlet port, first and second arc-shaped channels, a gas source, and a fluid containing source. The wafer chuck has a top surface, and orifices are formed on the top surface. The gas inlet port is formed in the wafer chuck and located underneath a fan-shaped sector of the top surface, wherein the gas inlet port is fluidly communicated with the orifices. The fluid inlet port is formed in the wafer chuck. The first and second arc-shaped channels are fluidly communicated with the fluid inlet port and located underneath the fan-shaped sector of the top surface and located at opposite sides of the gas inlet port from a top view. The gas source fluidly is connected to the gas inlet port. The fluid containing source fluidly is connected to the fluid inlet port.Type: ApplicationFiled: August 8, 2022Publication date: December 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Po-Wei LIANG, Chu-Han HSIEH, Chih-Lung CHENG, Po-Chih HUANG
-
Publication number: 20220115421Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.Type: ApplicationFiled: October 14, 2020Publication date: April 14, 2022Inventors: Tsung-Wei HUANG, Chao-Ching CHANG, Yun-Wei CHENG, Chih-Lung CHENG, Yen-Chang CHEN, Wen-Jen TSAI, Cheng Han LIN, Yu-Hsun CHIH, Sheng-Chan LI, Sheng-Chau CHEN
-
Publication number: 20220037169Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: Sheng-chun YANG, Chih-Lung CHENG, Yi-Ming LIN, Po-Chih HUANG, Yu-Hsiang JUAN, Xuan-Yang ZHENG
-
Publication number: 20210265142Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.Type: ApplicationFiled: February 25, 2020Publication date: August 26, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Po-Wei LIANG, Chu-Han HSIEH, Chih-Lung CHENG, Po-Chih HUANG
-
Patent number: 10160090Abstract: A chemical mechanical polishing (CMP) apparatus includes a processing chamber, a platen, a wafer heater and a carrier head. The platen is disposed in the processing chamber and is configured to allow a polishing pad to be disposed thereon. The wafer heater is disposed in the processing chamber and is configured to heat a wafer. The carrier head is disposed in the processing chamber and is configured to hold the heated wafer against the polishing pad.Type: GrantFiled: November 12, 2015Date of Patent: December 25, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Lung Cheng, Yu-Ming Kuo, Li-Ming Hsu
-
Publication number: 20170136601Abstract: A chemical mechanical polishing (CMP) apparatus includes a processing chamber, a platen, a wafer heater and a carrier head. The platen is disposed in the processing chamber and is configured to allow a polishing pad to be disposed thereon. The wafer heater is disposed in the processing chamber and is configured to heat a wafer. The carrier head is disposed in the processing chamber and is configured to hold the heated wafer against the polishing pad.Type: ApplicationFiled: November 12, 2015Publication date: May 18, 2017Inventors: Chih-Lung CHENG, Yu-Ming KUO, Li-Ming HSU
-
Publication number: 20150025590Abstract: A physical health cap application system include an electrode cap configured to fit the head of any person, and a main unit including a DC-stimulator plus and a positive and negative DC current generator unit electrically connected to the electrode cap for controlling the electrode cap to discharge a direct electrical current into predetermined regions of interest in the cerebral cortex of the head of a person to help relieve pain.Type: ApplicationFiled: July 17, 2013Publication date: January 22, 2015Inventor: Chih-Lung Cheng