Patents by Inventor Chih-Min HSIAO
Chih-Min HSIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240162142Abstract: A method of manufacturing a plurality of via structures includes providing an integrated circuit (IC) photo mask including via features and assist features positioned exclusively along alternating diagonal grid lines of a grid, aligning the IC photo mask with first metal segments of a first metal layer of a semiconductor substrate, the first metal segments having a first spacing corresponding to a first pitch of the grid, performing one or more photolithography processes including the IC photo mask, thereby defining via structure locations corresponding to the via features, and forming via structures at the defined via structure locations.Type: ApplicationFiled: January 24, 2024Publication date: May 16, 2024Inventors: Shih-Wei PENG, Chih-Min HSIAO, Ching-Hsu CHANG, Jiann-Tyng TZENG
-
Publication number: 20240087896Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Chih-Min HSIAO, Chien-Wen LAI, Ru-Gun LIU, Chih-Ming LAI, Shih-Ming CHANG, Yung-Sung YEN, Yu-Chen CHANG
-
Patent number: 11901286Abstract: A method of generating an integrated circuit (IC) layout diagram includes obtaining a grid of intersecting first and second pluralities of tracks corresponding to adjacent metal layers, determining that first and second pitches of the respective first and second pluralities of tracks conform to a first rule, applying a via positioning pattern to the grid whereby via regions are restricted to alternating diagonal grid lines, positioning via regions at some or all of the grid intersections of the alternating diagonal grid lines, and generating the IC layout diagram including the via regions positioned along the alternating diagonal grid lines.Type: GrantFiled: May 28, 2021Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Wei Peng, Chih-Min Hsiao, Ching-Hsu Chang, Jiann-Tyng Tzeng
-
Patent number: 11854807Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.Type: GrantFiled: March 2, 2020Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Min Hsiao, Chien-Wen Lai, Ru-Gun Liu, Chih-Ming Lai, Shih-Ming Chang, Yung-Sung Yen, Yu-Chen Chang
-
Publication number: 20230387002Abstract: An integrated circuit (IC) structure includes a plurality of first metal segments in a first metal layer of a semiconductor substrate, the plurality of first metal segments corresponding to first tracks, a plurality of second metal segments in a second metal layer of the semiconductor substrate adjacent to the first metal layer, the plurality of second metal segments corresponding to second tracks perpendicular to the first tracks, and a plurality of via structures configured to electrically connect the plurality of first metal segments to the plurality of second metal segments.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Inventors: Shih-Wei PENG, Chih-Min HSIAO, Ching-Hsu CHANG, Jiann-Tyng TZENG
-
Publication number: 20230377900Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.Type: ApplicationFiled: July 28, 2023Publication date: November 23, 2023Inventors: Chih-Min HSIAO, Chih-Ming LAI, Chien-Wen LAI, Ya HuI CHANG, Ru-Gun LIU
-
Publication number: 20230352303Abstract: A method for forming a patterned mask layer is provided. The method includes forming a layer over a substrate. The method includes forming a first strip structure and a second strip structure over the layer. The method includes forming a spacer layer over the first strip structure, the second strip structure, and the layer. The method includes forming a third strip structure and a fourth strip structure between the first strip part and the second strip part. The connecting part is between the third strip structure and the fourth strip structure. The method includes removing the spacer layer. The first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.Type: ApplicationFiled: July 5, 2023Publication date: November 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen CHANG, Chien-Wen LAI, Chih-Min HSIAO
-
Patent number: 11798812Abstract: A method for manufacturing a semiconductor device includes depositing a hard mask layer on an upper surface of an insulating layer. The hard mask layer is etched to form an opening in the hard mask layer. A via recess is formed in the insulating layer through the opening. A first photoresist layer is formed on the hard mask layer and in the via recess. The first photoresist layer is etched to form a photoresist plug in the via recess. Two opposite sides of the opening are etched to remove portions of the hard mask layer and thereby a portion of the upper surface of the insulating layer is exposed. The photoresist plug is removed. Metal is deposited in the via recess and on the exposed surface of the insulating layer. The metal is patterned.Type: GrantFiled: May 2, 2022Date of Patent: October 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Min Hsiao, Chih-Ming Lai, Chien-Wen Lai, Ya Hui Chang, Ru-Gun Liu
-
Publication number: 20230326756Abstract: A method for forming a semiconductor structure includes forming first mandrels over a target layer. The method for forming a semiconductor structure also includes forming a first opening to cut off one of the first mandrels. The method for forming a semiconductor structure also includes forming a spacer layer over the first mandrels. The method for forming a semiconductor structure also includes forming second mandrels over the spacer layer and between the first mandrels. The method for forming a semiconductor structure also includes forming a second opening to cut off one of the second mandrels. The method for forming a semiconductor structure also includes etching the spacer layer. The method for forming a semiconductor structure also includes etching the target layer.Type: ApplicationFiled: June 12, 2023Publication date: October 12, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen CHANG, Chien-Wen LAI, Chih-Min HSIAO
-
Publication number: 20230282514Abstract: Provided is a method for manufacturing integrated circuit (IC) devices including the operations of forming a first metal pattern (Mx) on a semiconductor substrate, forming a first via pattern (Vx) on the first metal pattern using an area selective deposition (ASD) that includes first and second vias formed adjacent opposed edges or terminal portions of the first metal pattern, and forming a second metal pattern (Mx+1) on the first via pattern with substantially no pattern overlap to form a zero enclosure and wherein a pair of adjacent vias are separated by a distance corresponding to the smallest end-to-end metal pattern spacing permitted under a set of design rules applied during the design of the IC devices.Type: ApplicationFiled: June 3, 2022Publication date: September 7, 2023Inventors: Shih-Wei PENG, Chih-Min HSIAO, Chien-Wen LAI, Jiann-Tyng TZENG, Yu-Luen DENG
-
Publication number: 20230260878Abstract: An integrated circuit includes a first active region, a first contact, a first gate, a first conductive line, a first conductor and a first via. In some embodiments, the first active region extends in a first direction. In some embodiments, the first contact extends in a second direction, and overlaps at least the first active region. In some embodiments, the first gate extends in the second direction, and overlaps the first active region. In some embodiments, the first conductive line extends in the first direction, and overlaps the first gate. In some embodiments, the first conductor overlaps the first contact, the first gate and the first conductive line, and extends in the first direction and the second direction. In some embodiments, the first via is between the first conductor and the first conductive line, and electrically couples the first conductor and the first conductive line together.Type: ApplicationFiled: May 27, 2022Publication date: August 17, 2023Inventors: Shih-Wei PENG, Chih-Min HSIAO, Chia-Tien WU, Chien-Wen LAI, Jiann-Tyng TZENG
-
Patent number: 11715638Abstract: A method for forming a semiconductor structure includes forming a hard mask layer over a target layer. The method also includes forming first mandrels over the hard mask layer. The method also includes forming a first opening in the first mandrels. The method also includes depositing a spacer layer over the hard mask layer and the first mandrels. The method also includes depositing a second mandrel material over the spacer layer. The method also includes planarizing the second mandrel material. The method also includes forming a second opening in the second mandrel material. The method also includes patterning and etching the second mandrel material to form second mandrels. The method also includes etching the spacer layer. The method also includes etching the hard mask layer and the target layer.Type: GrantFiled: July 16, 2021Date of Patent: August 1, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen Chang, Chien-Wen Lai, Chih-Min Hsiao
-
Publication number: 20230230836Abstract: A method of defining a pattern includes forming a plurality of cut shapes and a first plurality of openings within a first layer of a multi-layer hard mask to expose first portions of the second layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A second plurality of openings is formed within the spacer layer to expose second portions of the second layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the second layer exposed through the first plurality of openings and the second plurality of openings are etched.Type: ApplicationFiled: March 20, 2023Publication date: July 20, 2023Inventors: Chih-Min HSIAO, Chien-Wen Lai, Shih-chun Huang, Yung-Sung Yen, Chih-Ming Lai, Ru-Gun Liu
-
Patent number: 11699589Abstract: A method for forming a patterned mask layer is provided. The method includes forming a first layer over a substrate. The method includes forming a first strip structure and a second strip structure over the first layer. The method includes forming a spacer layer conformally covering the first strip structure, the second strip structure, and the first layer. The method includes forming a block structure in the first trench. The method includes removing a first portion of the spacer layer, which is under the first trench and not covered by the block structure, and a second portion of the spacer layer, which is over the first strip structure and the second strip structure. The method includes forming a third strip structure in the second trench and the third trench. The method includes removing the block structure. The method includes removing the spacer layer.Type: GrantFiled: July 30, 2021Date of Patent: July 11, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen Chang, Chien-Wen Lai, Chih-Min Hsiao
-
Publication number: 20230154759Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.Type: ApplicationFiled: January 12, 2022Publication date: May 18, 2023Inventors: HSIN-YUAN LEE, CHIH-MIN HSIAO, CHIEN-WEN LAI, SHIH-MING CHANG
-
Patent number: 11610778Abstract: A method of defining a pattern includes forming a plurality of cut shapes and a first plurality of openings within a first layer of a multi-layer hard mask to expose first portions of the second layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A second plurality of openings is formed within the spacer layer to expose second portions of the second layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the second layer exposed through the first plurality of openings and the second plurality of openings are etched.Type: GrantFiled: April 26, 2021Date of Patent: March 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Min Hsiao, Chien-Wen Lai, Shih-Chun Huang, Yung-Sung Yen, Chih-Ming Lai, Ru-Gun Liu
-
Publication number: 20230030767Abstract: A method for forming a patterned mask layer is provided. The method includes forming a first layer over a substrate. The method includes forming a first strip structure and a second strip structure over the first layer. The method includes forming a spacer layer conformally covering the first strip structure, the second strip structure, and the first layer. The method includes forming a block structure in the first trench. The method includes removing a first portion of the spacer layer, which is under the first trench and not covered by the block structure, and a second portion of the spacer layer, which is over the first strip structure and the second strip structure. The method includes forming a third strip structure in the second trench and the third trench. The method includes removing the block structure. The method includes removing the spacer layer.Type: ApplicationFiled: July 30, 2021Publication date: February 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen CHANG, Chien-Wen LAI, Chih-Min HSIAO
-
Publication number: 20230015618Abstract: A method for forming a semiconductor structure includes forming a hard mask layer over a target layer. The method also includes forming first mandrels over the hard mask layer. The method also includes forming a first opening in the first mandrels. The method also includes depositing a spacer layer over the hard mask layer and the first mandrels. The method also includes depositing a second mandrel material over the spacer layer. The method also includes planarizing the second mandrel material. The method also includes forming a second opening in the second mandrel material. The method also includes patterning and etching the second mandrel material to form second mandrels. The method also includes etching the spacer layer. The method also includes etching the hard mask layer and the target layer.Type: ApplicationFiled: July 16, 2021Publication date: January 19, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen CHANG, Chien-Wen LAI, Chih-Min HSIAO
-
Publication number: 20220359203Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Chih-Min HSIAO, Chien-Wen LAI, Ru-Gun LIU, Chih-Ming LAI, Shih-Ming CHANG, Yung-Sung YEN, Yu-Chen CHANG
-
Publication number: 20220344150Abstract: A method includes bonding a front side surface of a first wafer to a second wafer; performing a multi-trimming process on the first and second wafers from a back side surface of the first wafer, the multi-trimming process comprising: performing a first trimming step from the back side surface of the first wafer to cut through a periphery of the first wafer; performing a second trimming step on the second wafer to partially cut a periphery of the second wafer to form a first step-like structure; and performing a third trimming step on the second wafer to partially cut the periphery of the second wafer to form a second step-like structure connecting down from the first step-like structure; after performing the multi-trimming process, forming a coating material at least over the periphery of the second wafer.Type: ApplicationFiled: August 5, 2021Publication date: October 27, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Chen CHANG, Chien-Wen LAI, Chih-Min HSIAO