Abstract: Video processing methods and apparatuses in a video encoding or decoding system for processing out-of-bounds nodes in a current picture. An out-of-bounds node is a coding tree node with a block region across a current picture boundary. The video processing method or apparatus determines an inferred splitting type, applies the inferred splitting type to split the out-of-bounds node into child blocks, adaptively splits each child block into one or multiple leaf blocks, and encodes or decodes the leaf blocks in the out-of-bounds node inside the current picture. The inferred splitting type for partitioning out-of-bounds nodes in an inter slice, picture, or tile is the same as the inferred splitting type for partitioning out-of-bounds nodes in an intra slice, picture, or tile.

Abstract: Provided is an electronic package, in which a heat dissipating body is formed on an electronic device and is combined with a heat sink so that the electronic device, the heat dissipating body and the heat sink form a receiving space, and a heat dissipating material is formed in the receiving space and in contact with the heat sink and the electronic device, where a fluid regulating space is formed between the heat dissipating material and the heat dissipating body and is used as a volume regulating space for the heat dissipating material during thermal expansion and contraction.

Abstract: The invention provides a configurable memory system including an interface layer, an overlay application layer, and a memory relocatable layer. The interface layer has a physical memory attribute module and a physical memory protection module. The interface layer manages memory attributes and memory security. The overlay application layer is coupled to the interface layer and executes an exception handler process to check if an overlay exception has occurred. The memory relocatable layer, coupled to the interface layer and the overlay application layer, having a plurality of resident service program within a first memory space, an overlay physical region within a second memory space, and a plurality of overlay virtual regions having application processes within a third memory space. The application processes of one of the overlay virtual regions is determined to be executed by the PMA module and is copied from the overlay virtual region to the overlay physical region by a processor.

Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.

Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

Abstract: A motherboard includes a circuit board and a connector mounted on the circuit board. The connector comprises a socket and a latch pivotally mounted on one end of the socket. The latch comprises a body, a pressing member connected to one side of the body and extending outward from one side of the body to the outside of the socket, exposing an area from a side of the interface card for finger pressing. The supporting member is connected to another side of the body, and when the pressing member is pressed, it drives the body to pivot and causes the pushing portion to lift the interface card, and the supporting member stop the body from pivoting by resting against the circuit board.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to one embodiment includes an active region including a channel region and a source/drain region adjacent the channel region, a gate structure over the channel region of the active region, a source/drain contact over the source/drain region, a dielectric feature over the gate structure and including a lower portion adjacent the gate structure and an upper portion away from the gate structure, and an air gap disposed between the gate structure and the source/drain contact. A first width of the upper portion of the dielectric feature along a first direction is greater than a second width of the lower portion of the dielectric feature along the first direction. The air gap is disposed below the upper portion of the dielectric feature.

Abstract: An antiferroelectric field effect transistor (Anti-FeFET) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. The antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. This enables the antiferroelectric layer in the FeFET to provide a sharper/larger voltage drop for an erase operation of the FeFET (e.g., in which the FeFET switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.

Abstract: Semiconductor device and methods of forming the same are provided. A semiconductor device according to one embodiment includes a dielectric layer including a top surface, a plurality of magneto-resistive memory cells disposed in the dielectric layer and including top electrodes, a first etch stop layer disposed over the dielectric layer, a common electrode extending through the first etch stop layer to be in direct contact with the top electrodes, and a second etch stop layer disposed on the first etch stop layer and the common electrode. Top surfaces of the top electrodes are coplanar with the top surface of the dielectric layer.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. A gate electrode is over the substrate and a spacer structure laterally surrounds the gate electrode. A conductive via is disposed on the gate electrode. A liner is arranged along one or more sidewalls of the spacer structure. The conductive via has a bottommost surface that has a larger width than a part of the conductive via that is laterally adjacent to one or more interior sidewalls of the liner.

Abstract: In one example in accordance with the present disclosure, an electronic device is described. The electronic device includes a wireless controller. The wireless controller is to establish a first wireless connection between the electronic device and a peripheral device to receive a unique identifier for a second electronic device. The wireless controller is also to establish, based on the unique identifier for the second electronic device, a second wireless connection between the electronic device and the second electronic device. The electronic device includes a wireless transceiver to wirelessly transfer data to the second electronic device through the second wireless connection.

Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first insulating layer over a substrate. A first metal feature is formed in the first insulating layer and a second insulating layer is formed over the first insulating layer. A first metal via is formed through the second insulating layer to connect the first metal feature. A second metal feature is formed over the second insulating layer. The second metal feature has a convex top surface and a plane bottom surface, and the plane bottom is electrically connected to the first metal feature through the first metal via.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: Method and apparatus for constrained de-blocking filter are disclosed. One method receives input data related to a current block in a current picture at a video encoder side or a video bitstream corresponding to compressed data including the current block in the current picture at a video decoder side, and determines a first boundary associated with the current block, wherein the first boundary corresponds to one vertical boundary or one horizontal boundary of the current block. The method then applies de-blocking process to a reconstructed current block corresponding to the current block to result in a filtered-reconstructed current block, using a plurality of first reference samples at a same side of the first boundary, and replaces a first set of the first reference samples by one or more padding values. The method then generates a filtered decoded picture including the filtered-reconstructed current block.

Abstract: A multicolor light mixing module includes a light-dividing unit, a light-homogenizing member, a first laser set including first and second lighting units in a sequential arrangement, a light-mixing unit obliquely opposite to the light-dividing unit for guiding a first color light of the first lighting unit and a second color light of the second lighting unit along first and second light-mixing axes to form first and second laser beams, and a condensing lens. The light-dividing unit is obliquely opposite to the first laser set to allow partial transmission and partial reflection of the first and second color lights, for guiding the first and second color lights along first and second light-dividing axes. The light-homogenizing member is disposed on the first and second light-mixing axes for homogenizing the first and second laser beams. The condensing lens between the light-homogenizing member and the light-mixing unit condenses the first and second laser beams.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a gate structure sandwiched between and in contact with a first spacer feature and a second spacer feature, a top surface of the first spacer feature and a top surface of the second spacer feature extending above a top surface of the gate structure, a gate self-aligned contact (SAC) dielectric feature over the first spacer feature and the second spacer feature, a contact etch stop layer (CESL) over the gate SAC dielectric feature, a dielectric layer over the CESL, a gate contact feature extending through the dielectric layer, the CESL, the gate SAC dielectric feature, and between the first spacer feature and the second spacer feature to be in contact with the gate structure, and a liner disposed between the first spacer feature and the gate contact feature.

Abstract: An electronic package is provided, in which a circuit board and a circuit block are embedded in an encapsulating layer at a distance to each other, and circuit structures are formed on the two opposite surfaces of the encapsulating layer with electronic components arranged on one of the circuit structures. The circuit block and the circuit board embedded in the encapsulating layer are spaced apart from each other to allow to separate current conduction paths. As such, the circuit board will not overheat, and issues associated with warpage of the circuit board can be eliminated. Moreover, by embedding the circuit block and the circuit board in the encapsulating layer at a distance to each other, the structural strength of the encapsulating layer can be improved.