Patents by Inventor Chih-Peng Ni
Chih-Peng Ni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11482651Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: GrantFiled: June 12, 2020Date of Patent: October 25, 2022Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
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Publication number: 20200313051Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: ApplicationFiled: June 12, 2020Publication date: October 1, 2020Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching-San TAO, Chih-Peng NI, Tzer- Perng CHEN, Jen-Chau WU
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Patent number: 10686106Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: GrantFiled: May 7, 2018Date of Patent: June 16, 2020Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
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Patent number: 10529898Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: GrantFiled: August 16, 2017Date of Patent: January 7, 2020Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Patent number: 10217904Abstract: This disclosure discloses a light-emitting device. The light-emitting device has a first outermost sidewall and includes a light-emitting diode and an electrode. The light-emitting diode has a pad and a side surface. The electrode has a segment formed on the pad to extend beyond the side surface, and a first protrusion extending from the segment to the first outermost sidewall.Type: GrantFiled: February 2, 2016Date of Patent: February 26, 2019Assignee: EPISTAR CORPORATIONInventors: Hung-Hsuan Chen, Chih-Peng Ni, Jui-Hsien Chang, Hsin-Yu Lee, Tsen-Kuei Wang, Chen-Yen Fan
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Publication number: 20180254391Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: ApplicationFiled: May 7, 2018Publication date: September 6, 2018Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching-San TAO, Chih-Peng NI, Tzer- Perng CHEN, Jen-Chau WU
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Patent number: 9929207Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.Type: GrantFiled: March 3, 2016Date of Patent: March 27, 2018Assignee: EPISTAR CORPORATIONInventors: Rong-Ren Lee, Cheng-Hong Chen, Chih-Peng Ni, Chun-Yu Lin
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Patent number: 9893244Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: GrantFiled: September 18, 2015Date of Patent: February 13, 2018Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Publication number: 20180019382Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: ApplicationFiled: September 18, 2015Publication date: January 18, 2018Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching San TAO, Chih-Peng NI, Tzer-Perng CHEN, Jen-Chau WU, Masafumi SANO, Chih-Ming WANG
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Publication number: 20170365750Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: ApplicationFiled: August 16, 2017Publication date: December 21, 2017Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching San TAO, Chih-Peng NI, Tzer-Perng CHEN, Jen-Chau WU, Masafumi SANO, Chih-Ming WANG
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Patent number: 9741905Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: GrantFiled: September 18, 2015Date of Patent: August 22, 2017Assignee: Epistar CorporationInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Publication number: 20160225955Abstract: This disclosure discloses a light-emitting device. The light-emitting device has a first outermost sidewall and includes a light-emitting diode and an electrode. The light-emitting diode has a pad and a side surface. The electrode has a segment formed on the pad to extend beyond the side surface, and a first protrusion extending from the segment to the first outermost sidewall.Type: ApplicationFiled: February 2, 2016Publication date: August 4, 2016Inventors: Hung-Hsuan CHEN, Chih-Peng NI, Jui-Hsien CHANG, Hsin-Yu LEE, Tsen-Kuei WANG, Chen-Yen FAN
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Publication number: 20160190205Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.Type: ApplicationFiled: March 3, 2016Publication date: June 30, 2016Inventors: Rong-Ren LEE, Cheng-Hong CHEN, Chih-Peng NI, Chun-Yu LIN
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Patent number: 9312303Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.Type: GrantFiled: March 11, 2014Date of Patent: April 12, 2016Assignee: EPISTAR CORPORATIONInventors: Rong-Ren Lee, Cheng-Hong Chen, Chih-Peng Ni, Chun-Yu Lin
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Publication number: 20160013371Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.Type: ApplicationFiled: September 18, 2015Publication date: January 14, 2016Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching San TAO, Chih-Peng NI, Tzer-Perng CHEN, Jen-Chau WU, Masafumi SANO, Chih-Ming WANG
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Patent number: 9142740Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.Type: GrantFiled: May 2, 2013Date of Patent: September 22, 2015Assignee: EPISTAR CORPORATIONInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu, Masafumi Sano, Chih-Ming Wang
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Publication number: 20150214449Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.Type: ApplicationFiled: April 6, 2015Publication date: July 30, 2015Inventors: Cheng-Nan HAN, Tsung-Xian LEE, Min-Hsun HSIEH, Hung-Hsuan CHEN, Hsin-Mao LIU, Hsing-Chao CHEN, Ching-San TAO, Chih-Peng NI, Tzer- Perng CHEN, Jen-Chau WU
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Patent number: 9000461Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.Type: GrantFiled: August 9, 2011Date of Patent: April 7, 2015Assignee: Epistar CorporationInventors: Cheng-Nan Han, Tsung-Xian Lee, Min-Hsun Hsieh, Hung-Hsuan Chen, Hsin-Mao Liu, Hsing-Chao Chen, Ching-San Tao, Chih-Peng Ni, Tzer-Perng Chen, Jen-Chau Wu
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Publication number: 20140193932Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.Type: ApplicationFiled: March 11, 2014Publication date: July 10, 2014Applicant: Epistar CorporationInventors: Rong-Ren LEE, Cheng-Hong CHEN, Chih-Peng NI, Chun-Yu LIN
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Publication number: 20130334551Abstract: A light-emitting device comprising: a substrate having a first surface and a second surface, wherein the second surface is opposite to the first surface; a semiconductor structure formed on the first surface of the substrate, comprising a first type semiconductor layer, an active layer and a second type semiconductor layer; and an isolation region separating at least the active layer into a first part and a second part, wherein the first part is capable of generating the electromagnetic radiation, and the second part comprises a breakdown diode.Type: ApplicationFiled: June 14, 2012Publication date: December 19, 2013Applicant: EPISTAR CORPORATIONInventors: Rong-Ren LEE, Cheng-Hong CHEN, Chih-Peng NI, Chun-Yu LIN