Patents by Inventor Chih-Shan Tan

Chih-Shan Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor heterojunction, field effect transistor and photodetector including the same
    Patent number: 11296250
    Abstract: The present disclosure provides a semiconductor heterojunction. The semiconductor heterojunction includes a bottom semiconductor, a top semiconductor and an electrode substrate. An upper surface of the bottom semiconductor includes a first facet. A lower surface of the top semiconductor includes a second facet, and the lower surface of the top semiconductor is contacted with the upper surface of the bottom semiconductor. The electrode substrate is disposed below the bottom semiconductor.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: April 5, 2022
    Assignee: National Tsing Hua University
    Inventors: Michael Hsuan-Yi Huang, An-Ting Lee, Chih-Shan Tan, Pei-Lun Hsieh
  • Semiconductor Heterojunction, Field Effect Transistor and Photodetector Including the Same
    Publication number: 20210217920
    Abstract: The present disclosure provides a semiconductor heterojunction. The semiconductor heterojunction includes a bottom semiconductor, a top semiconductor and an electrode substrate. An upper surface of the bottom semiconductor includes a first facet. A lower surface of the top semiconductor includes a second facet, and the lower surface of the top semiconductor is contacted with the upper surface of the bottom semiconductor. The electrode substrate is disposed below the bottom semiconductor.
    Type: Application
    Filed: April 21, 2020
    Publication date: July 15, 2021
    Inventors: Michael Hsuan-Yi Huang, An-Ting Lee, Chih-Shan Tan, Pei-Lun Hsieh
  • Magnetic material
    Patent number: 8491730
    Abstract: A magnetic material includes a main alloy having a rhombohedral crystal structure and a composition represented by CoyCuxPtz, wherein x ranges from 3 to 32, y ranges from 18 to 47, and z ranges from 40 to 60, with the proviso that x+y+z=100. The rhombohedral crystal structure of the main alloy includes a magnetic Co—Pt alloy region and a nonmagnetic Cu—Pt alloy region.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: July 23, 2013
    Assignee: National Taiwan University
    Inventors: Fu-Te Yuan, An-Cheng Sun, Jen-Hwa Hsu, Chih-Shan Tan, Po-Cheng Kuo
  • MAGNETIC MATERIAL
    Publication number: 20120237392
    Abstract: A magnetic material includes a main alloy having a rhombohedral crystal structure and a composition represented by CoyCuxPtz, wherein x ranges from 3 to 32, y ranges from 18 to 47, and z ranges from 40 to 60, with the proviso that x+y+z=100. The rhombohedral crystal structure of the main alloy includes a magnetic Co—Pt alloy region and a nonmagnetic Cu—Pt alloy region.
    Type: Application
    Filed: June 15, 2011
    Publication date: September 20, 2012
    Applicant: National Taiwan University
    Inventors: Fu-Te Yuan, An-Cheng Sun, Jen-Hwa Hsu, Chih-Shan Tan, Po-Cheng Kuo