Patents by Inventor Chih-Sheng Li
Chih-Sheng Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240078170Abstract: A setting method of in-memory computing simulator includes: performing a plurality of test combinations by an in-memory computing device and recording a plurality of first estimation indices corresponding to the plurality of test combinations respectively, wherein each of the plurality of test combinations includes one of a plurality of neural network models and one of a plurality of datasets, executing a simulator according to the plurality of test combinations by a processing device and recording a plurality of second estimation indices corresponding to the plurality of test combinations respectively, wherein the simulator has a plurality of adjustable settings; calculating a correlation sum according to the plurality of first estimation indices and the plurality of second estimation indices by the processing device, and performing an optimal algorithm to search an optimal parameter in the setting space constructed by the plurality of settings so that the correlation sum is maximal.Type: ApplicationFiled: November 21, 2022Publication date: March 7, 2024Inventors: Ke-Han Li, Chih-Fan Hsu, Yu-Sheng Lin, Wei-Chao CHEN
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Publication number: 20230317651Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.Type: ApplicationFiled: June 5, 2023Publication date: October 5, 2023Inventors: Chih-Fan Huang, Yen-Ming Chen, Chih-Sheng Li, Hui-Chi Chen, Chih-Hung Lu, Dian-Hau Chen
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Patent number: 11670608Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.Type: GrantFiled: July 23, 2020Date of Patent: June 6, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fan Huang, Hui-Chi Chen, Chih-Sheng Li, Chih-Hung Lu, Dian-Hau Chen, Yen-Ming Chen
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Patent number: 10998235Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: GrantFiled: July 14, 2020Date of Patent: May 4, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20210098399Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.Type: ApplicationFiled: July 23, 2020Publication date: April 1, 2021Inventors: Chih-Fan Huang, Hui-Chi Chen, Chih-Sheng Li, Chih-Hung Lu, Dian-Hau Chen, Yen-Ming Chen
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Patent number: 10964801Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.Type: GrantFiled: September 26, 2019Date of Patent: March 30, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20200343141Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: ApplicationFiled: July 14, 2020Publication date: October 29, 2020Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Patent number: 10727135Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: GrantFiled: October 4, 2019Date of Patent: July 28, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20200035564Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: ApplicationFiled: October 4, 2019Publication date: January 30, 2020Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20200027963Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.Type: ApplicationFiled: September 26, 2019Publication date: January 23, 2020Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Patent number: 10504787Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: GrantFiled: December 20, 2018Date of Patent: December 10, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Patent number: 10468504Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.Type: GrantFiled: December 17, 2018Date of Patent: November 5, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20190187728Abstract: An automatic following system includes a target apparatus and a following apparatus. The target apparatus includes a first magnetometer, a first processing unit, and a first wireless communications unit. The first magnetometer keeps transmitting geomagnetic azimuth information. The first processing unit receives the geomagnetic azimuth information and outputs first direction angle information. The first wireless communications unit transmits a wireless signal comprising the first direction angle information. The following apparatus includes a second magnetometer, a second processing unit, a second wireless communications unit, and a control unit. The second magnetometer keeps transmitting the geomagnetic azimuth information. The second wireless communications unit receives the wireless signal. The second processing unit generates second direction angle information, and calculates following steering angle information according to the first direction angle information and the second direction angle information.Type: ApplicationFiled: April 26, 2018Publication date: June 20, 2019Inventors: Ming-Fong Tsai, Chih-Sheng Li, Chia-Yuan Lin, Chih-Ming Lin, Chung-Yuan Chang
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Publication number: 20190140070Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.Type: ApplicationFiled: December 17, 2018Publication date: May 9, 2019Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20190131178Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: ApplicationFiled: December 20, 2018Publication date: May 2, 2019Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Patent number: 10163717Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: GrantFiled: February 26, 2018Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Patent number: 10164072Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.Type: GrantFiled: July 31, 2017Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20180182673Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: ApplicationFiled: February 26, 2018Publication date: June 28, 2018Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Patent number: 9905467Abstract: A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights.Type: GrantFiled: December 16, 2015Date of Patent: February 27, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
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Publication number: 20170330959Abstract: A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.Type: ApplicationFiled: July 31, 2017Publication date: November 16, 2017Inventors: Chih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu