Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.

Abstract: A totem-pole PFC circuit and a control method thereof are provided. The circuit includes an AC power source, first and second bridge arms and a controller. The first bridge arm includes first and second switches electrically connected in series with a connection node electrically connected to a first terminal of the AC power source. The second bridge arm includes third and fourth switches electrically connected in series with a connection node electrically connected to a second terminal of the AC power source. When a potential at the first terminal is higher than a potential at the second terminal, the controller turns off the fourth switch if the L-phase voltage is lower than a first threshold voltage. When the potential at the first terminal is lower than the potential at the second terminal, the controller turns off the third switch if the L-phase voltage is higher than a second threshold voltage.

Abstract: An ORing FET control circuit and method are provided. The circuit includes an ORing FET, a comparator, first, second and third resistors, a first capacitor, a diode and a driving unit. The positive and negative input terminals of the comparator are electrically connected to the input and output voltages. The first resistor, the second resistor, the first capacitor, and the third resistor are electrically connected in series between a reference voltage and a ground terminal sequentially. The reference voltage is lower than a voltage at the positive input terminal. When the input voltage is lower than the output voltage, if a voltage across the ORing FET is larger than a threshold, the comparator outputs a driving signal at low level, and correspondingly the driving unit turns off the ORing FET. The threshold depends on resistances of the first and second resistors.

Abstract: A storage device including a memory array and a peripheral logic circuit is provided. The memory array includes a plurality of banks and a data path. The peripheral logic circuit operates in a copy mode or a normal mode according to a mode-switch command. In the copy mode, the peripheral logic circuit directs a first bank to provide specific data to the data path and directs a second bank to receive specific data from the data path.

Abstract: A storage device including a memory array and a peripheral logic circuit is provided. The memory array includes a plurality of banks and a data path. The peripheral logic circuit operates in a copy mode or a normal mode according to a mode-switch command. In the copy mode, the peripheral logic circuit directs a first bank to provide specific data to the data path and directs a second bank to receive specific data from the data path.

Abstract: An adaptive feedback method for use in a memory device is provided. The memory device includes a first input-receiver circuit and a plurality of second input-receiver circuits. The method includes the steps of: providing a clock signal and an inverted clock signal to the first input-receiver circuit; generating an enable control signal by the first input-receiver circuit to control a first feedback path in the first input-receiver circuit; in response to the frequency of the clock signal and the inverted clock signal being higher than or equal to a predetermined frequency, activating the first feedback path in the first input-receiver circuit according to the enable control signal; and in response to the frequency of the clock signal and the inverted clock signal being lower than the predetermined frequency, deactivating the first feedback path in the first input-receiver circuit according to the enable control signal.

Abstract: An adaptive feedback method for use in a memory device is provided. The memory device includes a first input-receiver circuit and a plurality of second input-receiver circuits. The method includes the steps of: providing a clock signal and an inverted clock signal to the first input-receiver circuit; generating an enable control signal by the first input-receiver circuit to control a first feedback path in the first input-receiver circuit; in response to the frequency of the clock signal and the inverted clock signal being higher than or equal to a predetermined frequency, activating the first feedback path in the first input-receiver circuit according to the enable control signal; and in response to the frequency of the clock signal and the inverted clock signal being lower than the predetermined frequency, deactivating the first feedback path in the first input-receiver circuit according to the enable control signal.

Abstract: A row decoding circuit including row decoding blocks is provided. Each of the row decoding blocks includes row decoders. Each of the row decoders receives a pre-charge signal, and includes an inverter, a selecting transistor and at least one switch transistors. The inverter receives the corresponding pre-charge signal, and outputs a first control signal. The first source/drain of the selecting transistor is coupled to a system high voltage, the gate receives the first control signal, and the second source/drain outputs a corresponding row selecting signal to a memory array of a memory device. The switch transistors are coupled between the second source/drain of the selecting transistor and a corresponding first reference signal in series. When the selecting transistor is controlled by the first control signal and turned on, the first reference signal is set to a high voltage level.

Abstract: A row decoding circuit including row decoding blocks is provided. Each of the row decoding blocks includes row decoders. Each of the row decoders receives a pre-charge signal, and includes an inverter, a selecting transistor and at least one switch transistors. The inverter receives the corresponding pre-charge signal, and outputs a first control signal. The first source/drain of the selecting transistor is coupled to a system high voltage, the gate receives the first control signal, and the second source/drain outputs a corresponding row selecting signal to a memory array of a memory device. The switch transistors are coupled between the second source/drain of the selecting transistor and a corresponding first reference signal in series. When the selecting transistor is controlled by the first control signal and turned on, the first reference signal is set to a high voltage level.

Abstract: An optical device includes a lens, a driving unit, a control unit, a frame, and a boundary detecting unit. The lens has a metal barrel. The control unit is electrically connected to the driving unit, to control a movement thereof. The frame has an inner wall. The frame defines a lens movement area. The boundary detecting unit is disposed on the inner wall. The boundary detecting unit has a plurality of sensors disposed on the inner wall, and surrounds the lens equidistantly. When the metal tube approaches one of the sensors, a capacitance of the sensor will be changed, and the IC sends a position detection signal to the control unit, according to the capacitance variation. The control unit controls the movement of the lens, according to the position detection signal.

Abstract: The invention discloses a NAND type ROM. The NAND type ROM comprises a plurality of bit lines, a plurality of word lines, a first source line, a second source line, and a plurality of NAND strings. The bit lines comprise a plurality of upper bit lines, first lower and second lower bit lines. The first lower and second lower bit lines are alternately arranged in parallel, and the plurality of word lines are vertically arranged to each bit lines. The first and second source line are respectively connected to the plurality of first and second lower bit lines. The plurality of NAND strings comprise a plurality of first and second NAND strings. The first NAND strings are connected to the upper bit lines, word lines, and first lower bit lines. The second NAND strings are connected to the upper bit lines, word lines, and second lower bit lines.