Patents by Inventor Chih-Wei Luo
Chih-Wei Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11733103Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.Type: GrantFiled: September 24, 2021Date of Patent: August 22, 2023Assignee: National Yang Ming Chiao Tung UniversityInventors: Chih-Wei Luo, Yi-Chen Liu, Tien-Tien Yeh
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Publication number: 20230258504Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.Type: ApplicationFiled: April 11, 2023Publication date: August 17, 2023Applicant: National Yang Ming Chiao Tung UniversityInventors: Chih-Wei LUO, Yi-Chen LIU, Tien-Tien YEH
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Publication number: 20220011167Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.Type: ApplicationFiled: September 24, 2021Publication date: January 13, 2022Applicant: National Yang Ming Chiao Tung UniversityInventors: Chih-Wei LUO, Yi-Chen LIU, Tien-Tien YEH
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Patent number: 11169031Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.Type: GrantFiled: October 19, 2018Date of Patent: November 9, 2021Assignee: NATIONAL CHIAO TUNG UNIVERSITYInventors: Chih-Wei Luo, Yi-Chen Liu, Tien-Tien Yeh
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Publication number: 20190360867Abstract: An optical pulse measuring method measuring an optical pulse generated from a pulse light source is provided. The method includes: splitting the optical pulse and then focusing them at a measuring point, so as to generate gas plasma by the autocorrelation of the split optical pulses; receiving the sound signal from the gas plasma and generate a plasma sound signal; and using the plasma sound signal to calculate the characteristics of the optical pulse. A measuring device is also provided.Type: ApplicationFiled: October 19, 2018Publication date: November 28, 2019Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Chih-Wei LUO, Yi-Chen LIU, Tien-Tien YEH
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Publication number: 20150343567Abstract: A method and system for formation of vertical microvias in an opaque ceramic thin-plate by femtosecond laser pulses are introduced. The method includes (a) thin an opaque ceramic substrate and reduce its thickness to a range of 20-100 ?m to provide the ceramic thin-plate; (b) place the ceramic thin-plate on a carrier; and (c) drill the ceramic thin-plate by the femtosecond laser pulses, wherein the femtosecond laser pulses have the following parameters, including a pulse width <100 fs, a pulse frequency of 1,000˜10,000 Hz, a laser with a central wavelength of 800 nm, and a movable stage with a speed of 20-200 ?m/s. Hence, vertical mirovias with high aspect ratio can be fabricated in an opaque ceramic thin-plate.Type: ApplicationFiled: May 29, 2014Publication date: December 3, 2015Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Chih WANG, Chi-Haw CHIANG, Chih-Wei LUO, Sheng-Yang TSENG, Ya-Hsin TSENG, Hui-Hsin CHU
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Publication number: 20150303368Abstract: A method of repairing defect in a superconducting film, a method of coating a superconducting film, and a superconducting film formed by the method are prepared. The method of repairing defect includes detecting the superconducting film during a manufacturing process thereof. When a defect therein is detected, a repairing structure with superconductivity is formed on a position of the defect.Type: ApplicationFiled: July 15, 2014Publication date: October 22, 2015Inventors: Kun-Ping Huang, Hsi-Chuan Chen, Chiang-Hsiung Tong, Chih-Wei Luo, Wen-Yen Tzeng
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Patent number: 8835215Abstract: A simple method is developed in the present invention for fabricating periodic ripple microstructures on the surface of an ITO film by using single-beam femtosecond laser pulses. The periodic ripple microstructures composed of self-organized nanodots can be directly fabricated through the irradiation of the femtosecond laser, without scanning. The ripple spacing of ˜800 nm, ˜400 nm and ˜200 nm observed in the periodic ripple microstructures can be attributed to the interference between the incident light and the scattering light of the femtosecond laser from the surface of the ITO film. In the present invention, the self-organized dots are formed by the constructive interference formed in the surface of the ITO film, where includes higher energy to break the In—O and Sn—O bonds and then form the In—In bonds. Therefore, the dots have higher surface current greater than other disconstructive regions of the ITO film.Type: GrantFiled: July 31, 2012Date of Patent: September 16, 2014Assignee: National Tsing Hua UniversityInventors: Jih-perng Leu, Chih-Wei Luo, Chih Wang, Jwo-Huei Jou
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Patent number: 8808492Abstract: A method of joining superconductor materials is described. A microwave chamber including a first heat absorption plate and a second heat absorption plate corresponding to the first absorption plate is provided. A first superconductor material and a second superconductor material are disposed between the first heat absorption plate and the second heat absorption plate in the microwave chamber. The first superconductor material and the second superconductor material have an overlapping region therebetween, and a pressure is applied to the first heat absorption plate and the second heat absorption plate. Microwave power is supplied to the microwave chamber. The first heat absorption plate and the second heat absorption plate transform the microwave power into thermal energy so as to join the first superconductor material and the second superconductor material at the overlapping region.Type: GrantFiled: June 6, 2012Date of Patent: August 19, 2014Assignee: Industrial Technology Research InstituteInventors: Kun-Ping Huang, Chih-Chen Chang, Yu-Tse Hsieh, Chih-Wei Luo, Chih-Hsiang Su, Wen-Yen Tzeng
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Publication number: 20130299466Abstract: A simple method is developed in the present invention for fabricating periodic ripple microstructures on the surface of an ITO film by using single-beam femtosecond laser pulses. The periodic ripple microstructures composed of self-organized nanodots can be directly fabricated through the irradiation of the femtosecond laser, without scanning. The ripple spacing of ˜800 nm, ˜400 nm and ˜200 nm observed in the periodic ripple microstructures can be attributed to the interference between the incident light and the scattering light of the femtosecond laser from the surface of the ITO film. In the present invention, the self-organized dots are formed by the constructive interference formed in the surface of the ITO film, where includes higher energy to break the In—O and Sn—O bonds and then form the In—In bonds. Therefore, the dots have higher surface current greater than other disconstructive regions of the ITO film.Type: ApplicationFiled: July 31, 2012Publication date: November 14, 2013Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Jih-perng Leu, Chih-Wei Luo, Chih Wang, Jwo-Huei Jou
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Publication number: 20130157868Abstract: A method of joining superconductor materials is described. A microwave chamber including a first heat absorption plate and a second heat absorption plate corresponding to the first absorption plate is provided. A first superconductor material and a second superconductor material are disposed between the first heat absorption plate and the second heat absorption plate in the microwave chamber. The first superconductor material and the second superconductor material have an overlapping region therebetween, and a pressure is applied to the first heat absorption plate and the second heat absorption plate. Microwave power is supplied to the microwave chamber. The first heat absorption plate and the second heat absorption plate transform the microwave power into thermal energy so as to join the first superconductor material and the second superconductor material at the overlapping region.Type: ApplicationFiled: June 6, 2012Publication date: June 20, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kun-Ping Huang, Chih-Chen Chang, Yu-Tse Hsieh, Chih-Wei Luo, Chih-Hsiang Su, Wen-Yen Tzeng
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Publication number: 20110108797Abstract: A single chip type white light LED device includes a first semiconductor layer of a first doping type, a ZnMnSeTe (Zinc Manganese Selenium Tellurium) red light quantum well, a first barrier layer disposed on the ZnMnSeTe red light quantum well, a green light emitting layer including green light quantum dots disposed on the first barrier layer, a second barrier layer disposed on the green light emitting layer, a blue light emitting layer including blue light quantum dots disposed on the second barrier layer, a third barrier layer disposed on the blue light emitting layer, and a second semiconductor layer disposed on the third barrier layer.Type: ApplicationFiled: November 30, 2009Publication date: May 12, 2011Inventors: Chu-Shou Yang, Chia-Sing Wu, Wu-Ching Chou, Mei-Tsao Chiang, Chi-Neng Mo, Chih-Wei Luo, Liang-Kuei Huang
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Publication number: 20050030905Abstract: A wireless communication device has a wireless transceiver module, a calculation module and a display module. The wireless transceiver module transmits and receives wireless data. The calculation module retrieves and processes the wireless data for generating display instructions. The display module shows communication status of the wireless communication device according to the display instructions. With information regarding the communication status, users are able to know the instant status of the wireless communication device.Type: ApplicationFiled: August 7, 2003Publication date: February 10, 2005Inventors: Chih-Wei Luo, Wen-Bin Tsai