Abstract: Aspects of the disclosure provide a frame processor for processing frames with aliasing artifacts. For example, the frame processor can include a super-resolution (SR) and anti-aliasing (AA) engine and an attention reference frame generator coupled to the SR and AA engine. The SR and AA engine can be configured to enhance resolution and remove aliasing artifacts of a frame to generate a first high-resolution frame with aliasing artifacts and a second high-resolution frame with aliasing artifacts removed. The attention reference frame generator can be configured to generate an attention reference frame based on the first high-resolution frame and the second high-resolution frame.

Abstract: A method includes forming a first portion of a spacer layer over a first fin and a second portion of the spacer layer over a second fin, performing a first etching process to recess the first portion of the spacer layer with respect to the second portion of the spacer layer to form first spacers on sidewalls of the first fin, subsequently performing a second etching process to recess the second portion of the spacer layer with respect to the first spacers to form second spacers on sidewalls of the second fin, where the second spacers are formed to a height greater than that of the first spacers, and forming a first epitaxial source/drain feature and a second epitaxial source/drain feature between the first spacers and the second spacers, respectively, where the first epitaxial source/drain feature is larger than that of the second epitaxial source/drain feature.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip (IC). The method includes forming a first fin of semiconductor material and a second fin of semiconductor material within a semiconductor substrate. A gate structure is formed over the first fin and source/drain regions are formed on or within the first fin. The source/drain regions are formed on opposite sides of the gate structure. One or more pick-up regions are formed on or within the second fin. The source/drain regions respectively have a first width measured along a first direction parallel to a long axis of the first fin and the one or more pick-up regions respectively have a second width measured along the first direction. The second width is larger than the first width.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first fin projecting vertically from a semiconductor substrate. A second fin projects vertically from the semiconductor substrate, where the second fin is spaced from the first fin, and where the first fin has a first uppermost surface that is disposed over a second uppermost surface of the second fin. A nanostructure stack is disposed over the second fin and vertically spaced from the second fin, where the nanostructure stack comprises a plurality of vertically stacked semiconductor nanostructures. A pair of first source/drain regions is disposed on the first fin, where the first source/drain regions are disposed on opposite sides of an upper portion of the first fin. A pair of second source/drain regions is disposed on the second fin, where the second source/drain regions are disposed on opposite sides of the nanostructure stack.

Abstract: A 3D image sensing device includes a first camera lens, a second camera lens and a light source. A 3D image processing method for the 3D image sensing device includes the following steps. Firstly, a target is photographed by the first camera lens and the second camera lens, and the obtained images are processed in a stereo vision mode. Consequently, a first depth map is obtained. After the light source emits plural feature points to the target, the target is photographed by the first camera lens and the second camera lens, and the obtained images are processed in an active stereo vision mode. Consequently, a second depth map is obtained. The first depth map and the second depth map are synthesized as a synthesized depth map according to a synthetization strategy.

Abstract: Disclosed is a tungsten-doped lithium manganese iron phosphate-based particulate for a cathode of a lithium-ion battery. The particulates include a composition represented by a formula of LixMn0.998-y-zFeyMzW0.002PaO4a±p/C, wherein x, y, z, a, p, and M are as defined herein. Also disclosed is a powdery material including the particulates, and a method for preparing the powdery material.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A stacked wiring structure includes a first wiring substrate and a second wiring substrate. The first wiring substrate includes a first glass substrate, multiple first conductive through vias penetrating through the first glass substrate, and a first multi-layered redistribution wiring structure disposed on the first glass substrate. The second wiring substrate includes a second glass substrate, multiple second conductive through vias penetrating through the second glass substrate, and a second multi-layered redistribution wiring structure disposed on the second glass substrate. The first conductive through vias are electrically connected to the second conductive through vias. The first glass substrate is spaced apart from the second glass substrate. The first multi-layered redistribution wiring structure is spaced apart from the second multi-layered redistribution wiring structure by the first glass substrate and the second glass substrate.

Abstract: An optical device includes a range finding module. The range finding module includes a first light condenser unit, a light emitting unit and a light receiving unit. The first light condenser unit defines an optical axis and a hole disposed along the optical axis. The first light condenser unit, the light emitting unit and the light receiving unit are sequentially arranged along the optical axis. The light is emitted by the light emitting unit, passes through the hole, reaches an object, is reflected by the object, is converged by the first light condenser unit and is received by the light receiving unit to generate an electrical signal.

Abstract: A head mounted display system includes a scanning unit and a processing unit. The scanning unit is configured to scan a real object in a real environment so as to generate a scanning result. The processing unit is coupled to the scanning unit. The processing unit is configured to identify the real object according to the scanning result of the scanning unit, determine at least one predetermined interactive characteristic according to an identification result of the processing unit, create a virtual object in a virtual environment corresponding to the real object in the real environment according to the scanning result of the scanning unit, and assign the at least one predetermined interactive characteristic to the virtual object in the virtual environment. Therefore, the present disclosure allows a user to manipulate the virtual object in different ways more naturally, which effectively improves the user's interactive experience.

Abstract: A liquid level sensing device and a packing structure are provided. An outer tube fastener is connected to a signal module. A protective soft tube is connected to the outer tube fastener. An end of a double-layer flexible tube is connected to the protective soft tube. The double-layer flexible tube includes a flexible conductive outer tube and a fluorine-containing plastic inner tube coaxially attached in the flexible conductive outer tube. The fluorine-containing plastic inner tube is made of a flexible material. The flexible conductive outer tube is made of a conductive flexible material to form a grounding layer. A sensing module is disposed in the fluorine-containing plastic inner tube. A magnetic floater is assembled outside the double-layer flexible tube. A hanger is connected to another end of the double-layer flexible tube.

Abstract: A virtual object operating system and a virtual object operating method are provided. The virtual object operating method includes the following steps. Multiple images are obtained. A motion of an operating object in the images is determined. The operating object is existed in a real environment. A motion of a virtual object interacted with the operating object according to the motion of the operating object is determined. The virtual object is existed in a virtual environment. Accordingly, the motion of the operating object can be tracked without motion sensor on operating body portion of a user.

Abstract: A liquid level sensing device and a packing structure are provided. An outer tube fastener is connected to a signal module. A protective soft tube is connected to the outer tube fastener. An end of a double-layer flexible tube is connected to the protective soft tube. The double-layer flexible tube includes a flexible conductive outer tube and a fluorine-containing plastic inner tube coaxially attached in the flexible conductive outer tube. The fluorine-containing plastic inner tube is made of a flexible material. The flexible conductive outer tube is made of a conductive flexible material to form a grounding layer. A sensing module is disposed in the fluorine-containing plastic inner tube. A magnetic floater is assembled outside the double-layer flexible tube. A hanger is connected to another end of the double-layer flexible tube.

Abstract: A virtual object operating system and a virtual object operating method are provided. The virtual object operating method includes the following steps. Multiple images are obtained. A motion of an operating object in the images is determined. The operating object is existed in a real environment. A motion of a virtual object interacted with the operating object according to the motion of the operating object is determined. The virtual object is existed in a virtual environment. Accordingly, the motion of the operating object can be tracked without motion sensor on operating body portion of a user.