Abstract: A heterojunction bipolar transistor includes: a substrate; a base mesa disposed on the substrate, wherein the base mesa includes a collector layer and a base layer disposed on the collector layer, and wherein in a top view, the base layer includes a first edge and a second edge opposite to the first edge; an emitter layer disposed on the base layer; a base electrode disposed on the substrate and connected to the base layer; a dielectric layer disposed on the base electrode, wherein a first via hole is formed in the dielectric layer at the first edge of the base layer, and a second via hole is formed in the dielectric layer at the second edge of the base layer; and a conductive feature disposed on the dielectric layer, wherein the conductive feature is connected to the base electrode through the first via hole and the second via hole.

Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.

Abstract: A training device includes a force receiving component, a location detector, a resistance generator, and a controller. The force receiving component moves along a closed trajectory. The location detector is configured to detect a location of the force receiving component in the closed trajectory and to output a location signal. The resistance generator is configured to exert a resistance on the force receiving component. The controller controls the resistance generator to adjust the resistance based on the location signal.

Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: A heterojunction bipolar transistor includes: a substrate; a base mesa disposed on the substrate, wherein the base mesa includes a collector layer and a base layer disposed on the collector layer, and wherein in a top view, the base layer includes a first edge and a second edge opposite to the first edge; an emitter layer disposed on the base layer; a base electrode disposed on the substrate and connected to the base layer; a dielectric layer disposed on the base electrode, wherein a first via hole is formed in the dielectric layer at the first edge of the base layer, and a second via hole is formed in the dielectric layer at the second edge of the base layer; and a conductive feature disposed on the dielectric layer, wherein the conductive feature is connected to the base electrode through the first via hole and the second via hole.

Abstract: A method for transmitting signals using orthogonal frequency division multiplexing (OFDM) symbols in a wireless communication system, includes: selecting a plurality of OFDM symbols as a symbol group in time dimension; and multiplying a scrambling pattern with the symbol group.

Abstract: A structure and method for demodulating two-level differential amplitude-shift-keying signals using simple adding operations are provided. Threshold values are dynamically adjusted according to the channel response. By comparing the threshold values and the differential amplitude values, it can be found whether the amplitude of the received signal is changed. Furthermore, it no needs to know the changed value of received signal amplitudes and the differential two-level amplitude-shift-keying signals can be demodulated by just detecting whether the amplitude of the received signal is changed. By this idea, the complexity of the receiver implementation is simplified and the demodulator can get better performance.

Abstract: A method for transmitting signals using orthogonal frequency division multiplexing (OFDM) symbols in a wireless communication system, includes: selecting a plurality of OFDM symbols as a symbol group in time dimension; and multiplying a scrambling pattern with the symbol group.

Abstract: A structure and method for demodulating two-level differential amplitude-shift-keying signals using simple adding operations are provided. Threshold values are dynamically adjusted according to the channel response. By comparing the threshold values and the differential amplitude values, it can be found whether the amplitude of the received signal is changed. Furthermore, it no needs to know the changed value of received signal amplitudes and the differential two-level amplitude-shift-keying signals can be demodulated by just detecting whether the amplitude of the received signal is changed. By this idea, the complexity of the receiver implementation is simplified and the demodulator can get better performance.