Abstract: A light guide module includes a light guide plate and a gradient index lens. The light guide plate has a light output surface and a light incident surface. The light incident surface is connected to the light output surface. The gradient index lens has a first surface, a second surface and a third surface. The first surface and the second surface are connected to the third surface. The first surface of the gradient index lens is attached to the light output surface. Multiple internal refractive indexes of the gradient index lens are increased gradually from the first surface to the second surface. A minimum refractive index of the multiple internal refractive indexes is less than a refractive index of the light guide plate. The incident light is refracted multiple times within the gradient index lens, and totally reflected back to the light guide plate.

Abstract: The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.

Abstract: The present invention relates to a method for measuring cracks remotely and the device thereof. First, multiple laser spots with known a shape are projected onto a remote wall and beside a crack. Then, by using geometric calculations, the relative coordinates of the laser spots on the wall and the real distance can be given and used as the reference length of the crack. Next, a camera is used for taking a picture of the remote crack along with the laser spots; the image identification technology is used for calculating the relevant parameters of the crack. Thereby, to acquire the parameters of the crack, a user needs not to be present at the site for measuring at a short distance or placing a reference object, and thus providing safety and convenience.

Abstract: A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.

Abstract: The present invention relates to a method for measuring cracks remotely and the device thereof. First, multiple laser spots with known a shape are projected onto a remote wall and beside a crack. Then, by using geometric calculations, the relative coordinates of the laser spots on the wail and the real distance can be given and used as the reference length of the crack. Next, a camera is used for taking a picture of the remote crack along with the laser spots; the image identification technology is used for calculating the relevant parameters of the crack. Thereby, to acquire the parameters of the crack, a user needs not to be present at the site for measuring at a short distance or placing a reference object, and thus providing safety and convenience.

Abstract: The electrophoretic display apparatus includes a first electrode layer, a second electrode layer, an electrophoresis layer, and a driving module. The driving module has an adsorption mode and a display mode. When an adsorption mode is activated, a first voltage difference is formed between the first electrode layer and the second electrode layer, resulting in electrostatic adsorption to reduce or eliminate the air gap between the second electrode layer and electrophoresis layer. When a display mode is activated, a second voltage difference is formed between the first electrode layer and the second electrode layer. The electrophoresis layer can sense the variation of electric field between the two electrode layers and start the operation of data transmission and display.

Abstract: A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.

Abstract: A display module includes a display panel and a fingerprint sensor. The display panel includes a display region, a peripheral region next to the display region, an active device array substrate, and an opposite substrate. The fingerprint sensor is disposed in the peripheral region of the active device array substrate of the display panel. Besides, the fingerprint sensor includes a light guide element, a light source, and a photosensor array. The photosensor array is disposed on the active device array substrate. The light guide element is disposed over the photosensor array. The light source is disposed on a side surface of the light guide element or below the light guide element.

Abstract: A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.

Abstract: The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.

Abstract: One aspect of the present invention relates to an apparatus for touch detection. In one embodiment, the apparatus includes a touch panel, an imaging device mounted to the touch panel and configured such that when a pointer touches the touch panel, the imaging device acquires an image of the pointer touching the touch panel, and a processor in communication with the imaging device for receiving and processing the acquired image to obtain its width and its angle relative to the touch panel so as to determine the location of the pointer in the touch panel.

Abstract: A display device including a first prism sheet, a second prism sheet disposed side by side with the first prism sheet, a first display module, and a second display module is provided. The first display module is disposed beneath the first prism and has a first display surface. At least a portion of the first display surface close to the second prism sheet is inclined toward the second prism sheet and forms a first angle with respect to the first prism sheet. The second display module is disposed beneath the second prism sheet and has a second display surface. At least a portion of the second display surface closed to the first prism sheet is inclined toward the first prism sheet and forms a first angle with respect to the second prism sheet.

Abstract: A flat panel display is provided. The flat panel display includes a display panel, a light source module and an optical film. The display panel has a light incident surface. The light source module including a light guide plate which has a light emergent surface is disposed parallel to the display panel. The light emergent surface is opposite to the light incident surface. A light emitted from the light source module is transmitted from the light emergent surface to the light incident surface. The optical film is disposed between the display panel and the light source module. The optical film has a first surface and a second surface which are opposite to each other. A plurality of platform-shaped optical structures are formed on the first surface while each of them has a flat top surface. A first transparent glue layer and a second transparent glue layer are respectively formed on the light incident surface and the light emergent surface.

Abstract: The invention provides a method for forming a light emitting device. A first substrate is provided. A plurality of patterned masks is formed on the first substrate, or on a semiconductor epitaxial layer grown on the first substrate, or the first substrate is etched to form a plurality of trenches, followed by performing an epitaxial lateral overgrowth process to grow an epitaxy layer over the first substrate. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical etching process is performed to lift off the first substrate from the epitaxy layer.

Abstract: The invention provides a method for forming a light emitting device. A first substrate is provided. A plurality of patterned masks is formed on the first substrate, or on a semiconductor epitaxial layer grown on the first substrate, or the first substrate is etched to form a plurality of trenches, followed by performing an epitaxial lateral overgrowth process to grow an epitaxy layer over the first substrate. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical etching process is performed to lift off the first substrate from the epitaxy layer.

Abstract: The electrophoretic display apparatus includes a first electrode layer, a second electrode layer, an electrophoresis layer, and a driving module. The driving module has an adsorption mode and a display mode. When an adsorption mode is activated, a first voltage difference is formed between the first electrode layer and the second electrode layer, resulting in electrostatic adsorption to reduce or eliminate the air gap between the second electrode layer and electrophoresis layer. When a display mode is activated, a second voltage difference is formed between the first electrode layer and the second electrode layer. The electrophoresis layer can sense the variation of electric field between the two electrode layers and start the operation of data transmission and display.

Abstract: One aspect of the present invention relates to an apparatus for touch detection. In one embodiment, the apparatus includes a touch panel, an imaging device mounted to the touch panel and configured such that when a pointer touches the touch panel, the imaging device acquires an image of the pointer touching the touch panel, and a processor in communication with the imaging device for receiving and processing the acquired image to obtain its bandwidth and its angle relative to the touch panel so as to determine the location of the pointer in the touch panel.

Abstract: A light enhancement film provided in the disclosure includes a substrate and an optical microstructure having a plurality of hexagonal cylindrical lenses inseparably arranged on a surface of the substrate in accordance with a honeycombed arrangement. Each of the hexagonal cylindrical lenses has different cross-sectional areas that are gradually narrowed from the surface of the substrate in a direction away from the substrate, and every two adjacent lenses have a gap therebetween. Furthermore, a display device having the light enhancement film is provided as well.

Abstract: A light enhancement film provided in the disclosure includes a substrate and an optical microstructure having a plurality of hexagonal cylindrical lenses inseparably arranged on a surface of the substrate in accordance with a honeycombed arrangement. Each of the hexagonal cylindrical lenses has different cross-sectional areas that are gradually narrowed from the surface of the substrate in a direction away from the substrate, and every two adjacent lenses have a gap therebetween. Furthermore, a display device having the light enhancement film is provided as well.

Abstract: A flat panel display is provided. The flat panel display includes a display panel, a light source module and an optical film. The display panel has a light incident surface. The light source module including a light guide plate which has a light emergent surface is disposed parallel to the display panel. The light emergent surface is opposite to the light incident surface. A light emitted from the light source module is transmitted from the light emergent surface to the light incident surface. The optical film is disposed between the display panel and the light source module. The optical film has a first surface and a second surface which are opposite to each other. A plurality of platform-shaped optical structures are formed on the first surface while each of them has a flat top surface. A first transparent glue layer and a second transparent glue layer are respectively formed on the light incident surface and the light emergent surface.