Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A method of reconstructing transcranial images using a dual-mode ultrasonic phased array includes steps of: controlling channels to emit energy toward an intracranial target point of a patient; respectively generating backscattered radiofrequency (RF) data by using the channels to receive backscattered energy reflected from the intracranial target; and reconstructing an acoustic distribution image based on those backscattered RF data in real-time. Compared with Pre-Treatment Ray Tracing Method, the present invention can display intracranial pressure distribution in real-time; compared with MR Thermometry, the present invention can be applied to low-energy applications without temperature change; and compared with Passive Cavitation Imaging, the present invention can stably present acoustic distribution images without relying on microbubbles.

Abstract: A device includes a semiconductor substrate and a first gate stack over the semiconductor substrate, the first gate stack being between a first gate spacer and a second gate spacer. The device further includes a second gate stack over the semiconductor substrate between the first gate spacer and the second gate spacer and a dielectric material separating the first gate stack from the second gate stack. The dielectric material is at least partially between the first gate spacer and the second gate spacer, a first width of an upper portion of the dielectric material is greater than a second width of a lower portion of the dielectric material, and a third width of an upper portion of the first gate spacer is less than a fourth width of a lower portion of the first gate spacer.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

Abstract: A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed on and corresponds to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a sealing layer, and at least a portion of the sealing layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the sealing layer define a chamber.

Abstract: A semiconductor device is described. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: An image sensing device and a control device of an illumination device thereof are provided. The control device includes a control circuit, an operation circuit, and multiple driving signal generators. The control circuit generates multiple control signals. The operation circuit performs a logical operation on the control signals and an image capturing signal to generate multiple operation results. The driving signal generator respectively provides multiple driving signals to the illumination device according to the operation results, and the driving signals respectively have multiple different output powers.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A physiological detection device includes system including a first array PPG detector, a second array PPG detector, a display and a processing unit. The first array PPG detector is configured to generate a plurality of first PPG signals. The second array PPG detector is configured to generate a plurality of second PPG signals. The display is configured to show a detected result of the physiological detection system. The processing unit is configured to convert the plurality of first PPG signals and the plurality of second PPG signals to a first 3D energy distribution and a second 3D energy distribution, respectively, and control the display to show an alert message.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device comprises a source region and a drain region in a substrate and laterally spaced. A gate stack is over the substrate and between the source region and the drain region. The drain region includes two or more first doped regions having a first doping type in the substrate. The drain region further includes one or more second doped regions in the substrate. The first doped regions have a greater concentration of first doping type dopants than the second doped regions, and each of the second doped regions is disposed laterally between two neighboring first doped regions.

Abstract: A method for switching between different RATs is provided. The method is executed by a mobile communications device camping on a first cell using a first Radio Access Technology (RAT). The method includes: determining, by a controller of the mobile communications device, a data transmission rate of the mobile communications device in the first cell; sending, by the controller, a first measurement report according to the determined data transmission rate, wherein the first measurement report is intended to trigger a handover procedure initiated by the first cell or to release a radio resource control (RRC) connection; and switching, by the controller, to camp on a second cell using a second RAT via the handover procedure or a local releasing procedure after the sending of the first measurement report.

Abstract: A communication apparatus comprises a radio transceiver and a modem processor. The radio transceiver is configured to transmit or receive wireless signals in a wireless network. The modem processor is coupled to the radio transceiver and configured to perform operations comprising: connecting to a first network device via a first communication link in a first frequency band; predicting a handover according to at least one of at least one measurement result or location information; connecting to a second network device via a second communication link in a second frequency band, after predicting the handover; performing the handover from the first network device to a third network device, to stop connecting to the first network device and to connect to the third network device via the first communication link in the first frequency band; and stopping connecting to the second network device, after performing the handover.

Abstract: A method for simultaneous Reception (Rx) or Transmission (Tx) associated with dual subscriber numbers using a single RF device in a User Equipment (UE) is provided. The UE determines whether a trigger condition for enabling simultaneous Rx or Tx operation associated with two separate subscriber numbers is met. In response to the trigger condition being met, the UE reports a first value representing an aggregated bandwidth or a number of CCs or MIMO layers for one of the two separate subscriber numbers to a mobile communication network via the single RF device, so as to enable simultaneous Rx or Tx operation associated with the two separate subscriber numbers. In particular, the first value is less than a second value representing a maximum aggregated bandwidth or a maximum number of CCs or MIMO layers supported by the UE's capability.

Abstract: A mobile communication device including a wireless transceiver and a controller is provided. The wireless transceiver performs wireless transmission and reception to and from a 3rd Generation Partnership Project (3GPP) network using a first Radio Access Technology (RAT). The controller establishes one or more radio bearers with the first 3GPP network via the wireless transceivers, and establishes a secure tunnel with a non-3GPP interworking gateway of a second 3GPP network via the radio bearers. The second 3GPP network utilizes a second RAT. Also, the controller registers, via the secure tunnel, an IP Multimedia Subsystem (IMS) service with an IMS server communicatively connected to the second 3GPP network, so as to make a voice call over the first 3GPP network.

Abstract: A method applied to a base station includes receiving UE-aiding information that includes a power consumption requirement of the UE; and configuring one or more transmission parameters to the UE based on the UE-aiding information. The transmission parameters may include at least one of the number of antennas, the number of component carriers, a transmission bandwidth, a modulation scheme, a scheduling request period, and a radio access technology (RAT).

Abstract: A mobile communication device including a Radio Frequency (RF) device and a controller is provided. The controller is coupled to the RF device and configured to allocate the RF device to selectively communicate with a Packet Switched (PS)-based network using a first subscriber identity or with a service network using a second subscriber identity, and ignore a paging message associated with the first subscriber identity during an ongoing on-demand service associated with the second subscriber identity.