Patents by Inventor Chihiro Hasegawa
Chihiro Hasegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240186809Abstract: A bipolar LFP battery includes a plurality of cells that are stacked together. A positive electrode active material layer of each of the cells includes lithium iron phosphate. A ?Q calculation unit calculates an increase ?Q of a charge amount, during charging of the cell of the bipolar LFP battery. The increase ?Q is an increase in the charge amount of the cell when the voltage of the cell increases from a first voltage to a second voltage. A full charge capacity estimation unit uses a full charge capacity map to estimate the full charge capacity of the cell, using the increase ?Q of the charge amount as a parameter.Type: ApplicationFiled: November 10, 2023Publication date: June 6, 2024Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Mitsuru TATEISHI, Hajime Hasegawa, Shun Takeoka, Shinya Takeshita, Takashi Okada, Chihiro Matsuda, Tomoyuki Kawai, Toshiya Arakawa
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Publication number: 20240179259Abstract: An information processing device includes: a distribution management unit that performs instruction processing pertaining to image distribution for image data captured at a specific event and transmitted to a server device; an event data management unit that performs processing for managing, in association with the image data, evaluation information for an image that is distributed; and a filter processing unit that performs filtering processing on the image data using the evaluation information as a filter condition.Type: ApplicationFiled: February 4, 2022Publication date: May 30, 2024Inventors: HARUKA KAWATA, AYAKO CHIBA, KANAKO YANA, CHIHIRO FUKIAGE, SHIGEO SUGIMORI, SHIN HASEGAWA, ERINA OHSUGI, KUMIKO MATSUNO
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Publication number: 20240091954Abstract: An apparatus includes a controller that performs control for acquiring a signal expressing an external stimulus acting on the apparatus; setting, based on the signal, a pseudo-emotion; and adjusting, based on the set pseudo-emotion, a content of control for the sound outputter or the driver of the apparatus, the content of the control being stored in advance in a storage.Type: ApplicationFiled: September 7, 2023Publication date: March 21, 2024Inventors: Hirokazu HASEGAWA, Chihiro TOYAMA
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Patent number: 9194041Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.Type: GrantFiled: November 1, 2012Date of Patent: November 24, 2015Assignee: UBE Industries, Ltd.Inventors: Masashi Shirai, Chihiro Hasegawa, Hiroshi Nihei
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Publication number: 20140295084Abstract: The present invention relates to a tris(dialkylamide)aluminum compound, and a method for producing an aluminum-containing thin film using the aluminum compound, the tris(dialkylamide)aluminum compound being represented by the formula (1): wherein R represents a linear alkyl group having 1 to 6 carbon atoms; and R1, R2 and R3 may be the same as, or different from each other, and each independently represents hydrogen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms, or R1, R2 and R3 may be joined together to form a ring, with the proviso that the compounds in which two or more of R1, R2 and R3 are hydrogen atoms are excluded, and three dialkylamide ligands may be the same as, or different from each other.Type: ApplicationFiled: November 1, 2012Publication date: October 2, 2014Inventors: Masashi Shirai, Chihiro Hasegawa, Hiroshi Nihei
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Patent number: 8304567Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.Type: GrantFiled: July 26, 2007Date of Patent: November 6, 2012Assignee: Ube Industries, LtdInventors: Takumi Kadota, Chihiro Hasegawa, Hiroki Kanato, Hiroshi Nihei
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Patent number: 8183153Abstract: Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).Type: GrantFiled: September 3, 2008Date of Patent: May 22, 2012Assignee: Ulvac, Inc.Inventors: Hideaki Zama, Michio Ishikawa, Takumi Kadota, Chihiro Hasegawa
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Publication number: 20100317189Abstract: Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).Type: ApplicationFiled: September 3, 2008Publication date: December 16, 2010Applicant: ULVAC, INC.Inventors: Hideaki Zama, Michio Ishikawa, Takumi Kadota, Chihiro Hasegawa
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Publication number: 20100055313Abstract: An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.Type: ApplicationFiled: July 26, 2007Publication date: March 4, 2010Applicant: UBE INDUSTRIES, LTDInventors: Takumi Kadota, Chihiro Hasegawa, Hiroki Kanato, Hiroshi Nihei
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Patent number: 7595414Abstract: To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. A metal complex compound comprising a ?-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.Type: GrantFiled: March 15, 2005Date of Patent: September 29, 2009Assignee: UBE Industries, Ltd.Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki, Hiroyuki Sakurai, Hiroki Kanato
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Publication number: 20080254216Abstract: [PROBLEMS] To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. [MEANS FOR SOLVING PROBLEMS] A metal complex compound comprising a ?-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.Type: ApplicationFiled: March 15, 2005Publication date: October 16, 2008Applicant: Ube Industries, Ltd.Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki, Hiroyuki Sakurai, Hiroki Kanato
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Patent number: 6992200Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.Type: GrantFiled: January 31, 2003Date of Patent: January 31, 2006Assignee: UBE Industries, Ltd.Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki
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Publication number: 20050080282Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I-I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I-I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.Type: ApplicationFiled: January 31, 2003Publication date: April 14, 2005Applicant: Ube Indstries, Ltd.Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki