Abstract: A method of manufacturing a semiconductor substrate includes a device-forming process of forming a plurality of device areas in a substrate section, a first wiring process of forming circuit wirings connected to the plurality of device areas, an electrode pad-forming process of forming a plurality of electrode pads, a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads, an electrode-forming process of forming electrode bodies on the electrode pads by electroless plating after the second wiring process, and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process.

Abstract: An electrode body is provided as an electrode body capable of appropriately reducing a load when silicon wafer direct bonding is performed. The electrode body 1 includes a base member 10 that has a predetermined thickness; and an electrode portion 20 that is formed on one surface of the base member in a thickness direction thereof. The electrode portion 20 includes a basic bump 21 formed in a substantially columnar shape to protrude on the base member 10 and a fragile bump 22 formed independently from the basic bump to form a metallic bond with the basic bump 21.

Abstract: A method of manufacturing a semiconductor substrate includes a device-forming process of forming a plurality of device areas in a substrate section, a first wiring process of forming circuit wirings connected to the plurality of device areas, an electrode pad-forming process of forming a plurality of electrode pads, a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads, an electrode-forming process of forming electrode bodies on the electrode pads by electroless plating after the second wiring process, and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process.

Abstract: A semiconductor substrate includes a semiconductor substrate body in which a wiring is formed and a bonding electrode provided to protrude from a first surface of the semiconductor substrate body. The bonding electrode comprises a composite including a first metal portion which is provided to protrude from the first surface of the semiconductor substrate body and of which a base end portion in a protrusion direction is electrically connected to the wiring, and a second metal portion which is formed of a second metal which has lower hardness than first metal of which the first metal portion is formed and which is provided to be bonded to the first metal portion in a range equal to or less than a protrusion height of the first metal portion, the first metal portion is formed on the second metal portion by sputtering or evaporation the first metal.

Abstract: A wiring substrate may include: a base having a predetermined thickness; a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; a wiring provided in the base and electrically connected to the electrode portions; and a resin layer formed on the base to fill between the plurality of electrode portions. An upper surface of the resin layer may be formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface.

Abstract: A wiring substrate may include: a base having a predetermined thickness; a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; a wiring provided in the base and electrically connected to the electrode portions; and a resin layer formed on the base to fill between the plurality of electrode portions. An upper surface of the resin layer may be formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface.

Abstract: A substrate includes a base member having a predetermined thickness, and an electrode array provided in one surface in a thickness direction of the base member and having a plurality of electrodes arranged two-dimensionally in a plan view, and the electrode array includes a central portion and an incremental region provided around the central portion in the planar view and is formed so that a height of the electrodes in the incremental region gradually increase as approaching toward the central portion.

Abstract: A wiring substrate may include: a base having a predetermined thickness; a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; a wiring provided in the base and electrically connected to the electrode portions; and a resin layer formed on the base to fill between the plurality of electrode portions. An upper surface of the resin layer may be formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface.

Abstract: An electrode body is provided as an electrode body capable of appropriately reducing a load when silicon wafer direct bonding is performed. The electrode body includes a base member that has a predetermined thickness; and an electrode portion that is formed on one surface of the base member in a thickness direction thereof. The electrode portion includes a basic bump formed in a substantially columnar shape to protrude on the base member and a fragile bump formed independently from the basic bump to form a metallic bond with the basic bump.

Abstract: A substrate includes a base member having a predetermined thickness, and an electrode array provided in one surface in a thickness direction of the base member and having a plurality of electrodes arranged two-dimensionally in a plan view, and the electrode array includes a central portion and an incremental region provided around the central portion in the planar view and is formed so that a height of the electrodes in the incremental region gradually increase as approaching toward the central portion.