Abstract: A solid-state imaging device includes a first semiconductor layer, a second semiconductor layer, and an external terminal. The first semiconductor layer has a pixel region in which a plurality of pixels is arranged, and a peripheral region provided around the pixel region. The second semiconductor layer is stacked on the first semiconductor layer, and is provided with a pixel circuit coupled to the pixels. The external terminal is provided in an opening that communicates with the second semiconductor layer from the peripheral region in the first semiconductor layer. A first isolator is provided in the first semiconductor layer within the peripheral region, and surrounds at least a portion of an outer periphery of the opening. A second isolator is provided in the second semiconductor layer within a region corresponding to the peripheral region, and surrounds at least a portion of the outer periphery of the opening.

Abstract: A light detecting device includes a semiconductor layer having a first surface and a second surface located on opposite sides to each other in a thickness direction, and a photoelectric conversion cell provided in the semiconductor layer and partitioned by a first isolation region. The photoelectric conversion cell includes a first photoelectric conversion region adjacent to a second photoelectric conversion region in plan view and each having a photoelectric conversion unit and a transfer transistor, a second isolation region arranged between the first photoelectric conversion region and the second photoelectric conversion region in plan view and extending in a thickness direction of the semiconductor layer, and an element formation region partitioned on the first surface side of the semiconductor layer by a third isolation region and provided with a pixel transistor. The element formation region extends over the first and second photoelectric conversion regions in plan view.

Abstract: The present disclosure relates to a semiconductor device, a solid-state imaging device, and a method for manufacturing a semiconductor device capable of improving the voltage dependency of a gate capacitance type. Provided is a semiconductor device having a laminated structure in which a compound layer formed on a surface of a semiconductor layer and formed by the semiconductor layer reacting with metal, an insulating film layer in contact with the compound layer, and an electrode layer formed on the insulating film layer are laminated. The present technology can be applied, for example, to an analog-to-digital (AD) conversion part included in the solid-state imaging device.

Abstract: The capacity of a MOS capacitor is increased. A semiconductor element includes a first semiconductor region, an insulation film, a gate electrode, and a second semiconductor region. The first semiconductor region is arranged on a semiconductor substrate and has a recess on the surface. The insulation film is arranged adjacent to the surface of the first semiconductor region. The gate electrode is arranged adjacent to the insulation film and constitutes a MOS capacitor with the first semiconductor region. The second semiconductor region is arranged adjacent to the first semiconductor region on the semiconductor substrate, formed in the same conductive type as the first semiconductor region, and supplies a carrier to the first semiconductor region when the MOS capacitor is charged and discharged.

Abstract: A resistance element includes a resistive film, in which the resistive film is adjacent to a protrusion formed on a surface of a semiconductor substrate, the protrusion including a step traversed by the resistive film.

Abstract: The present disclosure relates to a semiconductor device, a solid-state imaging device, and a method for manufacturing a semiconductor device capable of improving the voltage dependency of a gate capacitance type. Provided is a semiconductor device having a laminated structure in which a compound layer formed on a surface of a semiconductor layer and formed by the semiconductor layer reacting with metal, an insulating film layer in contact with the compound layer, and an electrode layer formed on the insulating film layer are laminated. The present technology can be applied, for example, to an analog-to-digital (AD) conversion part included in the solid-state imaging device.

Abstract: The capacity of a MOS capacitor is increased. A semiconductor element includes a first semiconductor region, an insulation film, a gate electrode, and a second semiconductor region. The first semiconductor region is arranged on a semiconductor substrate and has a recess on the surface. The insulation film is arranged adjacent to the surface of the first semiconductor region. The gate electrode is arranged adjacent to the insulation film and constitutes a MOS capacitor with the first semiconductor region. The second semiconductor region is arranged adjacent to the first semiconductor region on the semiconductor substrate, formed in the same conductive type as the first semiconductor region, and supplies a carrier to the first semiconductor region when the MOS capacitor is charged and discharged.

Abstract: An electronic device mounting structure for fitting an ECU (electronic device) in an open space formed in a device mounting housing and for holding the ECU fitted in the open space by a holding finger formed on the device mounting housing, includes a stopper formed in the device mounting housing so as to be juxtaposed with the holding finger, the stopper being configured to prevent the ECU from falling out of the device mounting housing.

Abstract: The present invention relates to a processed food or beverage composition containing a dextrin having the following characteristics (a) to (d): (a) the dextrin has a blue value within the range of 0.4 to 1.2, (b) having a gel strength of 4 N/cm2 or more as measured after being dissolved in distilled water at 80° C. to prepare a 30 wt % aqueous solution of the dextrin, and then being allowed to stand at 5° C. for 24 hours, (c) having a viscosity of 100 mPa·s or less as measured after being dissolved in distilled water at 25° C. to prepare a 30 wt % aqueous solution of the dextrin, and then being allowed to stand at 25° C. for five minutes; and (d) the ratio (A/B) of the following gel strengths A and B being 2 or less: A: a gel strength (N/cm2) as measured after being dissolved in distilled water at 80° C. to prepare a 30 wt % aqueous solution of the dextrin, and then being allowed to stand at 5° C. for 24 hours, and B: a gel strength (N/cm2) as measured after being dissolved in distilled water at 25° C.

Abstract: This invention provides a method of preparing emulsion compositions particularly emulsion foods, with excellent emulsifying activity, emulsion stability, heat resistance, and texture or mouthfeel. The method can be performed by carrying out a step (1) mixing pectin obtained by heating sugar beet pectin derived from sugar beet in powder form at a temperature of 50 to 150° C. at a relative humidity of 20 to 90% for 1 to 48 hours with raw materials for emulsion compositions; and a step (2) emulsifying the mixture obtained in the step (1), or, in place of step (1), (a) homogenizing a modified pectin in alternatively water systems; (b) mixing the water dispersions of the modified pectin obtained in step (a) with raw materials for emulsion compositions; and (c) emulsifying the mixture obtained in step (b). Thus, emulsion compositions can be prepared.

Abstract: An electronic device mounting structure for fitting an ECU (electronic device) in an open space formed in a device mounting housing and for holding the ECU fitted in the open space by a holding finger formed on the device mounting housing, includes a stopper formed in the device mounting housing so as to be juxtaposed with the holding finger, the stopper being configured to prevent the ECU from falling out of the device mounting housing.