Patents by Inventor Chiho Mizushima

Chiho Mizushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hydrogenated silane composition
    Patent number: 10676366
    Abstract: At least one embodiment of the present disclosure provides a hydrogenated silane composition containing a cyclic hydrogenated silane having high storage stability. The at least one embodiment of the present disclosure relates to a hydrogenated silane composition, wherein a content ratio of a linear hydrogenated silane having Si atoms of 5 or less to a cyclic hydrogenated silane having Si atoms of 5 to 7 is 0.009 or less, wherein the cyclic hydrogenated silane comprises at least cyclohexasilane, and further comprises at least one cyclic hydrogenated silane having a branched silyl group selected from silylcyclopentasilane and silylcyclohexasilane, and wherein a content ratio of a total of the silylcyclopentasilane and the silylcyclohexasilane to the cyclic hydrogenated silane having Si atoms of 5 to 7 is 10 ppb or more on a mass basis.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: June 9, 2020
    Assignee: NIPPON SHOKUBAI CO., LTD.
    Inventors: Takashi Abe, Chiho Mizushima, Tatsuhiko Akiyama, Takuya Kamiyama
  • HYDROGENATED SILANE COMPOSITION
    Publication number: 20190135642
    Abstract: At least one embodiment of the present disclosure provides a hydrogenated silane composition containing a cyclic hydrogenated silane having high storage stability. The at least one embodiment of the present disclosure relates to a hydrogenated silane composition, wherein a content ratio of a linear hydrogenated silane having Si atoms of 5 or less to a cyclic hydrogenated silane having Si atoms of 5 to 7 is 0.009 or less, wherein the cyclic hydrogenated silane comprises at least cyclohexasilane, and further comprises at least one cyclic hydrogenated silane having a branched silyl group selected from silylcyclopentasilane and silylcyclohexasilane, and wherein a content ratio of a total of the silylcyclopentasilane and the silylcyclohexasilane to the cyclic hydrogenated silane having Si atoms of 5 to 7 is 10 ppb or more on a mass basis.
    Type: Application
    Filed: August 23, 2018
    Publication date: May 9, 2019
    Applicant: NIPPON SHOKUBAI CO., LTD.
    Inventors: Takashi ABE, Chiho MIZUSHIMA, Tatsuhiko AKIYAMA, Takuya KAMIYAMA
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INSULATING FILM FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING APPARATUS OF THE SAME
    Publication number: 20100181654
    Abstract: An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film.
    Type: Application
    Filed: June 13, 2009
    Publication date: July 22, 2010
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Toshihito Fujiwara, Toshihiko Nishimori, Toshiya Watanabe, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Chiho Mizushima, Takuya Kamiyama, Tetsuya Yamamoto