Patents by Inventor Chii-Horng Li
Chii-Horng Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948999Abstract: A device includes a first semiconductor fin, a second semiconductor fin, a source/drain epitaxial structure, a semiconductive cap, and a contact. The first semiconductor fin and the second semiconductor fin are over a substrate. The source/drain epitaxial structure is connected to the first semiconductor fin and the second semiconductor fin. The source/drain epitaxial structure includes a first protruding portion and a second protruding portion aligned with the first semiconductor fin and the second semiconductor fin, respectively. The semiconductive cap is on and in contact with the first protruding portion and the second protruding portion. A top surface of the semiconductive cap is lower than a top surface of the first protruding portion of the source/drain epitaxial structure. The contact is electrically connected to the source/drain epitaxial structure and covers the semiconductive cap.Type: GrantFiled: July 26, 2022Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Heng-Wen Ting, Jung-Chi Tai, Lilly Su, Yang-Tai Hsiao
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Patent number: 11942550Abstract: A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.Type: GrantFiled: February 24, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chang Su, Yan-Ting Lin, Chien-Wei Lee, Bang-Ting Yan, Chih Teng Hsu, Chih-Chiang Chang, Chien-I Kuo, Chii-Horng Li, Yee-Chia Yeo
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Publication number: 20240096958Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Jung-Chi Tai, Chii-Horng Li, Pei-Ren Jeng, Yen-Ru Lee, Yan-Ting Lin, Chih-Yun Chin
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Publication number: 20240021618Abstract: A method includes forming first devices in a first region of a substrate, wherein each first device has a first number of fins; forming second devices in a second region of the substrate that is different from the first region, wherein each second device has a second number of fins that is different from the first number of fins; forming first recesses in the fins of the first devices, wherein the first recesses have a first depth; after forming the first recesses, forming second recesses in the fins of the second devices, wherein the second recesses have a second depth different from the first depth; growing a first epitaxial source/drain region in the first recesses; and growing a second epitaxial source/drain region in the second recess.Type: ApplicationFiled: August 1, 2023Publication date: January 18, 2024Inventors: Chih-Yun Chin, Yen-Ru Lee, Chien-Chang Su, Yan-Ting Lin, Chien-Wei Lee, Bang-Ting Yan, Heng-Wen Ting, Chii-Horng Li, Yee-Chia Yeo
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Patent number: 11854901Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.Type: GrantFiled: June 17, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsiung Yen, Ta-Chun Ma, Chien-Chang Su, Jung-Jen Chen, Pei-Ren Jeng, Chii-Horng Li, Kei-Wei Chen
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Patent number: 11855142Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.Type: GrantFiled: July 25, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jung-Chi Tai, Chii-Horng Li, Pei-Ren Jeng, Yen-Ru Lee, Yan-Ting Lin, Chih-Yun Chin
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Publication number: 20230387273Abstract: A system and methods of manufacturing semiconductor devices is described herein. The method includes forming a recess between fins in a substrate and forming a dielectric layer over the fins and in the recess. Once the dielectric layer has been formed, a bottom seed structure is formed over the dielectric layer within the recess and the dielectric layer is exposed along sidewalls of the recess. A dummy gate material is grown from the bottom seed structure in a bottom-up deposition process without growing the dummy gate material from the dielectric layer exposed along sidewalls of the recess.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Chia-Ao Chang, Pei-Ren Jeng, Chii-Horng Li, Yee-Chia Yeo
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Publication number: 20230387304Abstract: A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Eric PENG, Chao-Cheng CHEN, Chii-Horng LI, Ming-Hua YU, Shih-Hao LO, Syun-Ming JANG, Tze-Liang LEE, Ying-Hao HSIEH
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Publication number: 20230377989Abstract: A method includes etching a first recess adjacent a first dummy gate stack and a first fin; etching a second recess adjacent a second dummy gate stack and a second fin; and epitaxially growing a first epitaxy region in the first recess. The method further includes depositing a first metal-comprising mask over the first dummy gate stack, over the second dummy gate stack, over the first epitaxy region in the first recess, and in the second recess; patterning the first metal-comprising mask to expose the first dummy gate stack and the first epitaxy region; epitaxially growing a second epitaxy region in the first recess over the first epitaxy region; and after epitaxially growing the second epitaxy region, removing remaining portions of the first metal-comprising mask.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Inventors: Hui-Lin Huang, Li-Li Su, Yee-Chia Yeo, Chii-Horng Li
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Patent number: 11824120Abstract: A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.Type: GrantFiled: August 27, 2021Date of Patent: November 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Eric Peng, Chao-Cheng Chen, Chii-Horng Li, Ming-Hua Yu, Shih-Hao Lo, Syun-Ming Jang, Tze-Liang Lee, Ying-Hao Hsieh
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Publication number: 20230369490Abstract: A method includes forming a fin in a substrate. The fin is etched to create a source/drain recess. A source/drain feature is formed in the source/drain recess, in which a lattice constant of the source/drain feature is greater than a lattice constant of the fin. An epitaxy coat is grown over the source/drain feature, in which a lattice constant of the epitaxy coat is smaller than a lattice constant of the fin.Type: ApplicationFiled: July 3, 2023Publication date: November 16, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Yang LEE, Ting-Yeh CHEN, Chii-Horng LI, Feng-Cheng YANG
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Publication number: 20230369491Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a gate structure arranged over a substrate and a source/drain region arranged within the substrate along a side of the gate structure. The source/drain region includes a first layer lining interior sidewalls and a horizontally extending surface of the substrate, and a second layer lining interior sidewalls and a horizontally extending surface of the first layer. The first layer has a dopant with a first dopant concentration that continually decreases from an outermost sidewall of the first layer facing the substrate to one of the interior sidewalls of the first layer.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Hsueh-Chang Sung, Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li
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Publication number: 20230352594Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a source/drain feature over a substrate, a plurality of semiconductor layers over the substrate, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, a gate dielectric layer in contact with the gate electrode layer, and a cap layer. The cap layer has a first portion disposed between the plurality of semiconductor layers and the source/drain feature and a second portion extending outwardly from opposing ends of the first portion. The semiconductor device structure further includes a dielectric spacer disposed between and in contact with the source/drain feature and the second portion of the cap layer.Type: ApplicationFiled: April 29, 2022Publication date: November 2, 2023Inventors: Yen-Sheng LU, Chung-Chi WEN, Yen-Ting CHEN, Wei-Yang LEE, Chia-Pin LIN, Chih-Chiang CHANG, Chien-I KUO, Yuan-Ching PENG, Chih-Ching WANG, Wen-Hsing Hsieh, Chii-Horng LI, Yee-Chia YEO
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Publication number: 20230343635Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a source/drain region on the first fin and the second fin adjacent the gate structure, and an air gap separating the source/drain region from a top surface of the substrate.Type: ApplicationFiled: June 28, 2023Publication date: October 26, 2023Inventors: Yen-Ru Lee, Chii-Horng Li, Chien-I Kuo, Li-Li Su, Chien-Chang Su, Heng-Wen Ting, Jung-Chi Tai, Che-Hui Lee, Ying-Wei Li
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Publication number: 20230343819Abstract: Provided is an epitaxial structure and a method for forming such a structure. The method includes forming a fin structure on a substrate, wherein the fin structure includes a semiconductor material having substantially a {110} crystallographic orientation. The method includes etching a portion of the fin structure to expose a sidewall portion of the semiconductor material. Further, the method includes growing an epitaxial structure on the sidewall of the semiconductor material, wherein the epitaxial structure propagates with facets having a {110} crystallographic orientation.Type: ApplicationFiled: April 26, 2022Publication date: October 26, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Min Liu, Tsz-Mei Kwok, Yung-Chun Yang, Cheng-Yen Wen, Li-Li Su, Chii-Horng Li, Yee-Chia Yeo, Hui-Lin Huang
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Publication number: 20230317785Abstract: A device includes a first nanostructure over a substrate and a first source/drain region adjacent the first nanostructure. The first source/drain region includes a first epitaxial layer covering a first sidewall of the first nanostructure. The first epitaxial layer has a first concentration of a first dopant. The first epitaxial layer has a round convex profile opposite the first sidewall of the first nanostructure in a cross-sectional view. The first source/drain region further includes a second epitaxial layer covering the round convex profile of the first epitaxial layer in the cross-sectional view. The second epitaxial layer has a second concentration of the first dopant, the second concentration being different from the first concentration.Type: ApplicationFiled: April 4, 2022Publication date: October 5, 2023Inventors: Yung-Chun Yang, Wei Hao Lu, Wei-Min Liu, Li-Li Su, Chii-Horng Li, Yee-Chia Yeo
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Publication number: 20230317791Abstract: A method includes forming a plurality of channel layers above a (110)-orientated substrate, the channel layers arranged in a <110> direction normal to a top surface the (110)-orientated substrate and extending in a <110> direction perpendicular to the <110> direction; epitaxial growing a plurality of silicon layers on either side of each of the channel layers; doping the silicon layers with boron; epitaxial growing a plurality of first silicon germanium layers on the silicon layers; forming a gate structure surrounding each of the channel layers.Type: ApplicationFiled: April 1, 2022Publication date: October 5, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yan-Ting LIN, Chien-I KUO, Chii-Horng LI, Yee-Chia YEO
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Patent number: 11773506Abstract: An IC fabrication system for facilitating improved thermal uniformity includes a chamber within which an IC process is performed on a substrate, a heating mechanism configured to heat the substrate, and a substrate-retaining device configured to retain the substrate in the chamber. The substrate-retaining device includes a contact surface configured to contact an edge of the retained substrate without the substrate-retaining device contacting a circumferential surface of the retained substrate. The substrate-retaining device includes a plurality of contact regions and a plurality of noncontact regions disposed at a perimeter, where the plurality of noncontact regions is interspersed with the plurality of contact regions. Each of the plurality of noncontact regions includes the contact surface.Type: GrantFiled: October 7, 2019Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Hung Lin, Jr-Hung Li, Chang-Shen Lu, Tze-Liang Lee, Chii-Horng Li
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Patent number: 11749752Abstract: The present disclosure relates to a method of forming a transistor device. The method may be performed by forming a gate structure onto a semiconductor substrate and forming a source/drain recess within the semiconductor substrate adjacent to a side of the gate structure. One or more strain inducing materials are formed within the source/drain recess. The one or more strain inducing materials include a strain inducing component with a strain inducing component concentration profile that continuously decreases from a bottommost surface of the one or more strain inducing materials to a position above the bottommost surface. The bottommost surface contacts the semiconductor substrate.Type: GrantFiled: December 3, 2020Date of Patent: September 5, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsueh-Chang Sung, Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li
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Publication number: 20230275123Abstract: In an embodiment, a device includes: a semiconductor fin extending from a semiconductor substrate; a nanostructure above the semiconductor fin; a source/drain region adjacent a channel region of the nanostructure; a bottom spacer between the source/drain region and the semiconductor fin; and a gap between the bottom spacer and the source/drain region.Type: ApplicationFiled: June 8, 2022Publication date: August 31, 2023Inventors: Wei-Min Liu, Tsz-Mei Kwok, Hui-Lin Huang, Cheng-Yen Wen, Li-Li Su, Chii-Horng Li, Yee-Chia Yeo