Abstract: A semiconductor device includes a stacked via structure including a plurality of first vias formed over a substrate, a first interconnect formed on the plurality of first vias, a plurality of second vias formed on the first interconnect, and a second interconnect formed on the plurality of second vias. One of the first vias closest to one end part of the first interconnect and one of the second vias closest to the one end part of the first interconnect at least partially overlap with each other as viewed in the plane, and the first interconnect has a first extension part extending from a position of an end of the first via toward the one end part of the first interconnect and having a length which is more than six times as long as a via width of the first via.

Abstract: A semiconductor device includes a lower-layer wire, an upper-layer wire including a wire portion and a first wide portion whose wire width is greater than the wire portion, and a contact formation portion in which a contact portion for connecting the lower-layer wire and the first wide portion with each other is provided. The contact formation portion has a planar shape of which a length L1 in a direction parallel to a wire width direction of the first wide portion is greater than a length L2 in a direction parallel to a wire length direction of the first wide portion.

Abstract: A semiconductor device includes a lower-layer wire, an upper-layer wire including a wire portion and a first wide portion whose wire width is greater than the wire portion, and a contact formation portion in which a contact portion for connecting the lower-layer wire and the first wide portion with each other is provided. The contact formation portion has a planar shape of which a length L1 in a direction parallel to a wire width direction of the first wide portion is greater than a length L2 in a direction parallel to a wire length direction of the first wide portion.