Abstract: The present invention provides a chimeric polypeptide receptor in which an extracellular region comprising an antigenic region capable of being bound by an anti-human nicotinic acetylcholine receptor ?1 subunit (nAChR?1) antibody, a transmembrane region, and an intracellular domain comprising an intracellular signaling domain are arranged in the presented order from the N-terminus towards the C-terminus, wherein an amino acid sequence of the antigenic region comprises the amino acid sequence as set forth in SEQ ID NO: 2 or an amino acid sequence derived from the amino acid sequence as set forth in SEQ ID NO: 2 by the substitution, deletion, insertion, and/or addition of one or several amino acids, a polynucleotide encoding the chimeric polypeptide receptor polypeptide, a cell expressing the chimeric polypeptide receptor, etc., which are useful in the treatment of myasthenia gravis.

Abstract: In an exemplary embodiment, a coil component includes: an element body part 10 and a coil 30 of spiral shape constituted by multiple turn units 32 connected in a coil axial direction; wherein each turn unit 32 has, in a cross-sectional view in the width direction of the turn unit 32, a flat side 40 that extends in a second direction substantially perpendicular to the coil axis of the coil 30; and the point of intersection 48 between a figure line 42 corresponding to the longest part in a first direction, and a figure line 44 corresponding to the longest part in the second direction, with respect to the coil axis, is positioned on the figure line 42 within one-quarter of the figure line away from one end 50 on the side 40 or from the other end 52 opposing the side 40.

Abstract: An electronic component includes: an insulator part (10) of rectangular solid shape; a coil element (32) provided inside the insulator part (10); bottom electrodes (40) provided on a bottom face (14) of the insulator part (10) and electrically connected to the coil element (32); a plating layer (62) provided in a manner overlapping each bottom electrode (40) so that its end (64) on the bottom face (14) is away from the end (42) of the bottom electrode (40); a plating layer (60) which is arranged between the bottom electrode (40) and the plating layer (62) and overlaps the bottom electrode (40), and which is constituted by a metal having lower solder wettability and higher melting point than those of the plating layer (62); and an insulation layer (70) provided on the bottom face (14) in a manner covering the end (42) of the bottom electrode (40).

Abstract: An electronic component includes: an insulator part (10) of rectangular solid shape; a coil element (32) provided inside the insulator part (10); bottom electrodes (40) provided on a bottom face (14) of the insulator part (10) and electrically connected to the coil element (32); a plating layer (62) provided in a manner overlapping each bottom electrode (40) so that its end (64) on the bottom face (14) is away from the end (42) of the bottom electrode (40); a plating layer (60) which is arranged between the bottom electrode (40) and the plating layer (62) and overlaps the bottom electrode (40), and which is constituted by a metal having lower solder wettability and higher melting point than those of the plating layer (62); and an insulation layer (70) provided on the bottom face (14) in a manner covering the end (42) of the bottom electrode (40).

Abstract: In an exemplary embodiment, a coil component includes: an element body part 10 and a coil 30 of spiral shape constituted by multiple turn units 32 connected in a coil axial direction; wherein each turn unit 32 has, in a cross-sectional view in the width direction of the turn unit 32, a flat side 40 that extends in a second direction substantially perpendicular to the coil axis of the coil 30; and the point of intersection 48 between a figure line 42 corresponding to the longest part in a first direction, and a figure line 44 corresponding to the longest part in the second direction, with respect to the coil axis, is positioned on the figure line 42 within one-quarter of the figure line away from one end 50 on the side 40 or from the other end 52 opposing the side 40.

Abstract: In an embodiment, an electronic component includes: an insulator part 10 of rectangular solid shape; a coil element 32 provided inside the insulator part 10; bottom electrodes 40 provided on a bottom face 14 of the insulator part 10 and electrically connected to the coil element 32; a plating layer 62 provided in a manner overlapping each bottom electrode 40 so that its end 64 on the bottom face 14 is away from the end 42 of the bottom electrode 40; and a plating layer 60 which is arranged between the bottom electrode 40 and the plating layer 62 and overlaps the bottom electrode 40, and which is constituted by a metal having lower solder wettability and higher melting point than those of the plating layer 62. The electronic component can suppress generation of cracking in the insulator part.

Abstract: In an embodiments, a coil component includes: an element body part 10 and a coil 30 of spiral shape constituted by multiple winding conductors 32 and through hole conductors 34 that interconnect the winding conductors 32; wherein each winding conductor 32 has, in a cross-sectional view in the width direction of the winding conductor 32, a flat side 40 that extends in a second direction substantially perpendicular to the coil axis of the coil 30; and the point of intersection 48 between a figure line 42 corresponding to the longest part in a first direction, and a figure line 44 corresponding to the longest part in the second direction, with respect to the coil axis, is positioned on the figure line 42 within one-quarter of the figure line away from one end 50 on the side 40 or from the other end 52 opposing the side 40.

Abstract: In an embodiments, a coil component includes: an element body part 10 and a coil 30 of spiral shape constituted by multiple winding conductors 32 and through hole conductors 34 that interconnect the winding conductors 32; wherein each winding conductor 32 has, in a cross-sectional view in the width direction of the winding conductor 32, a flat side 40 that extends in a second direction substantially perpendicular to the coil axis of the coil 30; and the point of intersection 48 between a figure line 42 corresponding to the longest part in a first direction, and a figure line 44 corresponding to the longest part in the second direction, with respect to the coil axis, is positioned on the figure line 42 within one-quarter of the figure line away from one end 50 on the side 40 or from the other end 52 opposing the side 40.

Abstract: In an embodiment, an electronic component includes: an insulator part 10 of rectangular solid shape; a coil element 32 provided inside the insulator part 10; bottom electrodes 40 provided on a bottom face 14 of the insulator part 10 and electrically connected to the coil element 32; a plating layer 62 provided in a manner overlapping each bottom electrode 40 so that its end 64 on the bottom face 14 is away from the end 42 of the bottom electrode 40; and a plating layer 60 which is arranged between the bottom electrode 40 and the plating layer 62 and overlaps the bottom electrode 40, and which is constituted by a metal having lower solder wettability and higher melting point than those of the plating layer 62. The electronic component can suppress generation of cracking in the insulator part.

Abstract: A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.

Abstract: A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Abstract: A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.

Abstract: A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1?xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Abstract: The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Abstract: A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.

Abstract: The semiconductor device comprises a p type silicon substrate 18, a gate insulation film 27 of a layer film of a silicon oxynitride film 25 and an aluminum oxide film 26 which are sequentially formed on the p type silicon substrate 18, and a gate electrode 28 formed on the gate insulation film 27. Accordingly, both the flat band voltage shift and the hysteresis can be depressed. Thus, MIS transistors having good device characteristics can be realized.

Abstract: A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.