Abstract: A bearing constituent member includes a surface layer, at least one of particles composed of vanadium nitride having a particle diameter of 0.2 to 2 ?m and particles composed of vanadium carbonitride having a particle diameter of 0.2 to 2 ?m are present in the surface layer ranging from the surface to a depth of 10 ?m and at least one of the area ratio of the particles composed of vanadium nitride having a particle diameter of 0.2 to 2 ?m and the particles composed of vanadium carbonitride having a particle diameter of 0.2 to 2 ?m in the surface layer ranging from the surface to a depth of 10 ?m is 1 to 10%.

Abstract: There is provided a bearing constituent member capable of achieving a long life of a rolling bearing and securing sufficient static loading capacity and dimensional stability and a production process thereof as well as a rolling bearing having a long life and exhibiting sufficient static loading capacity and dimensional stability. A workpiece obtained from a steel containing 3.2 to 5.0% by mass of Cr and 0.05% by mass or more to less than 0.5% by mass of V is subjected to a heat treatment such as a carbonitriding treatment. Thereby, the following are achieved: the content of C in the surface layer ranging from the surface of the bearing constituent member of the rolling bearing to 10 ?m is 1.1 to 1.6% by mass, Vickers hardness at the position of a depth of 50 ?m from the surface is 740 to 900 (Rockwell C hardness is 62 to 67), the ? amount at the position of a depth of 10 ?m from the surface is 20 to 55% by volume, particles composed of vanadium nitride having a particle diameter of 0.

Abstract: A semiconductor apparatus having improved thermal fatigue life is provided by lowering maximum temperature on jointing members and reducing temperature change. A jointing member is placed between a semiconductor chip and a lead electrode, and a thermal stress relaxation body is arranged between the chip and a support electrode. Jointing members are placed between the thermal stress relaxation body and the chip and between the thermal stress relaxation body and the support electrode. A second thermal stress relaxation body made from a material having a thermal expansion coefficient between the coefficients of the chip and the lead electrode is located between the chip and the lead electrode. The first thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the chip and the support electrode, and has a thermal conductivity of 50 to 300 W/(m·° C.).

Abstract: The present invention provides a semiconductor apparatus having the improved thermal fatigue life against temperature change by lowering the maximum temperature on a jointing member existing between a semiconductor element and an electrode terminal and reducing the range of the temperature change.

Abstract: A semiconductor chip has a semiconductor chip, a support electrode body bonded to one of the end portions of the semiconductor chip and supported by, and fixed to, a heat spreader at a support fixing portion thereof, a lead electrode body bonded to the other end portion of the semiconductor chip and an insulating/sealing member disposed at the bond portion between the semiconductor chip and the support electrode body and at the bond portion between the semiconductor chip and the lead electrode body. The support electrode body includes a portion having an outer diameter different from that of the support fixing portion at which the support electrode body is supported and fixed by the heat spreader.

Abstract: A push-in type semiconductor chip has a semiconductor device, a support electrode body bonded to one of the end portions of the semiconductor chip and supported by, and fixed to, a heat spreader at a support fixing portion thereof, a lead electrode body bonded to the other end portion of the semiconductor chip and an insulating/sealing member disposed at the bond portion between the semiconductor chip and the support electrode body and at the bond portion between the semiconductor chip and the lead electrode body. The support electrode body includes a first portion having an outer diameter different from that of the support fixing portion at which the support electrode body is supported and fixed by the heat spreader. By setting a predetermined relationship between the outer diameters of the first portion and the support fixing portion, deformation and breakage of the semiconductor chip during assembly can be prevented.