Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode structure over a channel region, wherein the gate electrode structure includes a gate dielectric layer disposed over the first channel region, a gate electrode disposed over the gate dielectric layer, and insulating spacers disposed over opposing sidewalls of the gate electrode, wherein the gate dielectric layer is disposed over opposing sidewalls of the gate electrode. An interlayer dielectric layer is formed over opposing sidewalls of the insulating spacers. The insulating spacers are removed from an upper portion of the opposing sidewalls of the gate electrode to form trenches between the opposing sidewalls of the upper portion of the gate electrode and the interlayer dielectric layer, and the trenches are filled with an insulating material.

Abstract: Provided is a method of forming gigantic quantum dots including following steps. A first precursor by mixing zinc acetate (Zn(ac)2), cadmium oxide (CdO), a surfactant, and a solvent together and then performing a first heat treatment is provided. The first precursor includes Zn-complex having the surfactant and Cd-complex having the surfactant. A second precursor containing elements S and Se and trioctylphosphine (TOP) is added into the first precursor to form a reaction mixture. A second heat treatment is performed on the reaction mixture and then cooling the reaction mixture to form the gigantic quantum dots in the reaction mixture.

Abstract: Provided is a method of forming gigantic quantum dots including following steps. A first precursor by mixing zinc acetate (Zn(ac)2), cadmium oxide (CdO), a surfactant, and a solvent together and then performing a first heat treatment is provided. The first precursor includes Zn-complex having the surfactant and Cd-complex having the surfactant. A second precursor containing elements S and Se and trioctylphosphine (TOP) is added into the first precursor to form a reaction mixture. A second heat treatment is performed on the reaction mixture and then cooling the reaction mixture to form the gigantic quantum dots in the reaction mixture.

Abstract: Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdSe, a shell constituted of ZnS, and an alloy configured between the core and the shell. The core is wrapped by the shell. The alloy constituted of Cd, Se, Zn and S, wherein a content of the Cd and Se gradually decreases from the core to the shell and a content of the Zn and S gradually increases from the core to the shell. A particle size of each of the gigantic quantum dots is equal to or more than 10 nm.

Abstract: The present invention provides a naturally disintegratable cushion material and the process for making the material. The cushion material is non-toxic and environmental protective that it can be disintegrated naturally after being discarded. The cushion material is made from main material powder of grain shells, added with fillers (such as calcium carbonate), binders (such as polyvinyl alcohol) in suitable percentages, and further mixed with softeners (such as trimethylolpropane, polyethylene glycol or glycerine), water and other assistances (such as wax and boric acid) to form into a composite which includes moisture. Then the composite is heated and extruded by an extruder to vaporize the moisture in the composite and foamed. The foamed material is finally dried into cushion materials of desired shapes.