Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A luminescence conversion material is provided. The luminescence conversion material includes: a hybrid luminescence conversion particle, a first cladding material covering the hybrid luminescence conversion particle, and a second cladding material formed on the first cladding material and covering the first cladding material. The hybrid luminescence conversion particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first cladding material includes silicon oxide. The ratio ? (absorbance ratio ?: A939/A1000-1150) of the absorbance at 939 cm?1 (A939) to the absorbance peak at 1000-1150 cm?1 (A1000-1150) in a FTIR spectrum of the first cladding material is less than or equal to 0.8.

Abstract: A light color conversion layer structure includes a pixel separation layer over a substrate. The pixel separation layer includes several separating components. The receiving region over the substrate is defined by adjacent separating components. The light color conversion layer structure also includes a first isolation layer continuously formed over the substrate and on the sidewalls of the separating components surrounding the receiving region. The first isolation layer continuously covers the top surface of the substrate and the sidewalls of the separating components adjacent to the receiving region. The light color conversion layer structure also includes a light color conversion unit within the receiving region and on the first isolation layer. The light color conversion layer structure further includes a second isolation layer on the first isolation layer and the light color conversion unit. The second isolation layer covers the first isolation layer and the light color conversion unit.

Abstract: A luminescence conversion material is provided. The luminescence conversion material includes: a hybrid luminescence conversion particle, a first cladding material covering the hybrid luminescence conversion particle, and a second cladding material formed on the first cladding material and covering the first cladding material. The hybrid luminescence conversion particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first cladding material includes silicon oxide. The ratio ? (absorbance ratio ?: A939/A1000-1150) of the absorbance at 939 cm?1 (A939) to the absorbance peak at 1000-1150 cm?1 (A1000-1150) in a FTIR spectrum of the first cladding material is less than or equal to 0.8.

Abstract: A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I): wherein the definitions of R1, R2, A1, A2, A3, and Z1 and n are as defined in the specification.

Abstract: A conductive light absorption layer composition, a conductive light absorption layer, and a liquid crystal display employing the same are provided. The conductive light absorption layer composition includes: 10-40 parts by weight of an adhesion agent; 40-50 parts by weight of a non-conductive nano-pigment; 10-25 parts by weight of a conductive material; 10-25 parts by weight of a surfactant; and 0.1-1.0 parts by weight of an interface modifying agent.

Abstract: A high optical contrast pigment and colorful photosensitive composition employing the same are disclosed. The composition comprises a solvent, an alkali-soluble resin, reactive monomer, and a modified pigment which has low crystallization. The low crystallization degree means that the grain size variation R is not more 80%, wherein the grain size variation R is represented by a formula R=G1/G0×100%, G0 is the original grain size, and G1 is the grain size after modification.

Abstract: The invention provides a heat-resistant flexible color filter, including: a flexible transparent substrate, wherein the forming material thereof includes nano silica and polyimide, and the nano silica is present in an amount of about 20-70 wt %, based on 100 wt % of the forming material; and a heat-stable color photoresist material coated on the flexible transparent substrate, wherein the heat stable color photoresist material includes: a base soluble resin system about 30-90 wt %; a photosensitive system about 5-60 wt %; and a pigment coated with an inorganic alkoxide about 10-50 wt %.

Abstract: A high optical contrast pigment and colorful photosensitive composition employing the same are disclosed. The composition comprises a solvent, an alkali-soluble resin, reactive monomer, and a modified pigment which has low crystallization. The low crystallization degree means that the grain size variation R is not more 80%, wherein the grain size variation R is represented by a formula R=G1/G0×100%, G0 is the original grain size, and G1 is the grain size after modification.