Abstract: A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

Abstract: A silver-indium transient liquid phase method of bonding a semiconductor device and a heat-spreading mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint are provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

Abstract: A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

Abstract: A silver-indium transient liquid phase method of bonding a semiconductor device and a heat-spreading mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint are provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

Abstract: A method for detecting leakage in a bellow-type flow control valve and an apparatus for use in such detection are described. In the method, a leakage detection device can be connected in line and in fluid communication between a shut-off valve and a bellow-type flow control valve. The leakage detection device includes a mass flow controller and a recording means for detecting any possible leakage of a facility gas that is used to open or close the bellow-type flow control valve into a process gas conduit through a defective bellow. The apparatus may be advantageously equipped with quick disconnect fittings such that it can be used for checking a large number of bellow-type flow control valves that are normally used on a semiconductor fabrication apparatus.

Abstract: This disclosure relates to a multimicroprocessor unit which is adapted for implementation in a single MOS semiconductor chip, which unit includes a plurality of sets of registers where each set represents a different processing capability. The unit further includes common elements which are shared by the different sets of registers in a time multiplex manner. The shared elements include two scratch pad memories, an arithmetic logic unit, and a control unit which incorporates a composite read only memory from which control signals are fetched to initiate the respective data transfers and arithmetic operations. This control memory acts as a decoder for encoded microinstructions retrieved from outside of the multi-processor unit. In this sense, the present invention employs both vertical and horizontal microprogramming as those terms are conventionally defined. The different sets of dedicated registers are formed of 4-bit shift registers so as to permit a four-way time slicing among the processing capabilities.