Patents by Inventor Chin-Chung Liu

Chin-Chung Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11983475
    Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.
    Type: Grant
    Filed: February 7, 2023
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pin-Dai Sue, Po-Hsiang Huang, Fong-Yuan Chang, Chi-Yu Lu, Sheng-Hsiung Chen, Chin-Chou Liu, Lee-Chung Lu, Yen-Hung Lin, Li-Chun Tien, Yi-Kan Cheng
  • Patent number: 11935894
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20020108349
    Abstract: An aluminum fire-resistant honeycomb-shaped plate and its manufacturing method includes an aluminum intermediate honeycomb-shaped layer, a layer of gauze adhered respectively on an upper and a lower surface of the intermediate honeycomb-shaped layer, an outer solid aluminum plate adhered respectively on an outer surface of each layer of gauze. The gauze endures high temperature and percolates air. Then the outer surface of each outer solid aluminum plate is anodized with a layer of a chemical to prevent it from getting rusted and then sprayed with a layer of silicon glue to increase hardness of the outer surfaces and beautiful appearance.
    Type: Application
    Filed: February 15, 2001
    Publication date: August 15, 2002
    Inventor: Chin-Chung Liu