Abstract: This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.

Abstract: This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.

Abstract: A LED (Light Emitting Diode) structure with a contact layer of a multiple structure includes a nucleation layer disposed on a substrate; a conductive buffer layer disposed on the nucleation layer; an active layer disposed between an upper and a lower confinement layer, wherein the structure of active layer includes a semiconductor material mainly doped with III-V group; the contact layer made of the multilayer structure disposed on the upper confinement layer; and a transparent electrode disposed on the contact layer made of a multilayer structure; and an electrode contacted with the conductive buffer layer and isolated from the active layer and the transparent electrode.

Abstract: An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.

Abstract: An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.