Abstract: An electrode substrate of a flat panel display comprises a substrate, an electrode layer, a conductive layer, and a barrier layer. In this case, the electrode layer is disposed above the substrate. The conductive layer is disposed above the electrode layer. The material of the conductive layer comprises Silver (>99.5%), Silver alloy, Aluminum (>99.5%), Aluminum alloy, Copper (>99.5%) or Copper alloy. The barrier layer is disposed above the conductive layer. The material of the barrier layer comprises Titanium, Titanium alloy, Molybdenum, Chromium, Silicon, Silicon Oxide, or Titanium Oxide.

Abstract: The present invention is related to an alloy target used for producing thin film electrodes, consisting of silver (Ag), copper (Cu), and at least one precious metal selected from the group consisting of palladium (Pd), gold (Au) and platinum (Pt); wherein the mole ratio of said silver ranges from 0.8 to 0.999; the mole ratio of said copper ranges from 0.001 to 0.1; the mole ratio of said precious metal ranges from 0.001 to 0.1; and the total mole ratio of said alloy target is 1.

Abstract: A method for producing metal sputtering target, comprising a step of double V melting process, and a step of high temperature forging. The step of double V melting process produces a single metal of aluminum, titanium, or copper, or an alloy of the single metal associated with at least a different metal selecting from one of copper, silicon, titanium, zirconium, osmium, molybdenum, tungsten, platinum, gold, niobium, tantalum, cobalt, rhenium, and scandium. The step of high temperature forging treats the single metal or the alloy to form the metal sputtering target material with small crystal grains and a secondary phase of fineness and high homogeneity suitable for using in semiconductor and photoelectric industries.