Abstract: Provided is an inductor structure and manufacturing method thereof, including forming an inductance coil in a semiconductor packaging carrier plate and disposing a patterned magnetic conductive layer in the inductance coil. Therefore, a patterned build-up wiring method is used to form a magnetic material in the carrier plate, thereby improving electrical characteristics of the inductor.

Abstract: An anti-submarining seat cushion for a vehicle includes a main body constructed of an anisotropic material. The anisotropic material includes a primary material including a primary stiffness and a plurality of inserts that are dispersed throughout the primary material. The plurality of inserts exert an axial compressive force in response to the main body of the anti-submarining seat cushion experiencing a submarining load, where the axial compressive force is exerted in a direction that opposes the submarining load to increase an overall stiffness of the main body in a direction that aligns with the submarining load.

Abstract: A vehicle seat includes a seat cushion, a seat back pivotally moveable between an upright position and a reclined position, and at least one upper arm support selectively moveable between a stowed position and an extended position, the at least one upper arm support adapted to provide support for an upper arm of an occupant when the seat back of the vehicle seat is in the reclined position and the at least one upper arm support is in the extended position.

Abstract: A semiconductor structure includes a conductive line, a pad layer, and a barrier layer. The conductive line is embedded in a multi-level interconnect structure. The pad layer is over the conductive line. The barrier layer is between the conductive line and the pad layer. The pad layer is electrically connected to the conductive line through the barrier layer, and the barrier layer includes a first poly-crystalline layer and a second poly-crystalline layer. A boundary is between the first poly-crystalline layer and the second poly-crystalline layer.

Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: In some examples, a device can include a first antenna having a first wireless connection with a first computing device, a second antenna having a second wireless connection with a second computing device, and a controller to determine a signal strength of the first wireless connection and a signal strength of the second wireless connection, designate, in response to the signal strength of the first wireless connection being greater than a threshold signal strength, the first wireless connection as an active connection and the second wireless connection as a standby connection, and cause the peripheral device to communicate with the first computing device via the active connection of the first antenna while maintaining the second wireless connection to the second computing device via the second antenna, where the second wireless connection remains as the standby connection.

Abstract: An electronic window is provided for adjusting light and includes a first panel, a second panel, and an intermediate layer. The first panel includes a first alignment layer. The second panel includes a second alignment layer. The intermediate layer is disposed between the first panel and the second panel. The angle of orientation of the first alignment layer is between 25 degrees and 65 degrees, and the angle of orientation of the second alignment layer is between 115 degrees and 155 degrees.

Abstract: A chip structure is provided. The chip structure includes a substrate, a redistribution layer over the substrate, a bonding pad over the redistribution layer, a shielding pad over the redistribution layer and surrounding the bonding pad, an insulating layer over the redistribution layer and the shielding pad, and a bump over the bonding pad and the insulating layer. The insulating layer includes a first part and a second part surrounded by the first part, the first part has first thickness, the second part has a second thickness, and the first thickness and the second thickness are different.

Abstract: An optical device includes: a first substrate; a second substrate disposed opposite to the first substrate; a first conductive layer disposed on the first substrate, wherein the first conductive layer includes a first surface and a third side surface connecting to the first surface; a second conductive layer disposed on the second substrate; a sealant disposed between the first conductive layer and the second conductive layer and having a first side and a second side opposite to the first side; a liquid crystal layer disposed between the first conductive layer and the second conductive layer and locating at the first side of the sealant; and a barrier layer disposed between the first conductive layer and the second conductive layer and locating at the second side of the sealant, wherein at least part of the first surface and the third side surface are not covered by the barrier layer.

Abstract: The present invention discloses a force feedback hand training method including: providing a training game content and adjusting the training game content based on predetermined parameters; displaying the training game content on a display; determining whether an input button position of at least one input signal from a hand training device matches a predetermined input button position; and storing a determination result in a storage module.

Abstract: A component-embedded packaging structure is provided, in which a plurality of metal layers are formed on an inactive surface of a semiconductor chip so as to serve as a buffer portion, and the semiconductor chip is disposed on a carrying portion with the buffer portion via an adhesive. Then, the semiconductor chip is encapsulated by an insulating layer, and a build-up circuit structure is formed on the insulating layer and electrically connected to the semiconductor chip. Therefore, the buffer portion can prevent delamination from occurring between the semiconductor chip and the adhesive on the carrying portion if the semiconductor chip has a CTE (Coefficient of Thermal Expansion) less than a CTE of the adhesive.

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: A high-activity double-metal-cyanide catalyst, a method for fabricating the same, and applications of the same are disclosed. An organic complexing ligand, which is formed via mixing fatty alcohols and alicyclic carbonates, is used to generate a high-activity double-metal-cyanide catalyst. The high-activity double-metal-cyanide catalyst includes at least one double-metal-cyanide compound, at least one organic complexing ligand, and an optional functionalized compound. The double-metal-cyanide catalyst of the present invention has a higher activity than the conventional double-metal-cyanide catalysts. The polyols generated by the present invention has an insignificant amount of high-molecular-weight compounds.

Abstract: An electronic device includes a metal back cover, a metal frame, and two radiators. The metal frame disposed at a side of the metal back cover includes two disconnecting parts, a second slot, and two connecting parts. A first slot is formed between each of the disconnecting parts and the metal back cover. The second slot is formed between the two disconnecting parts. The two connecting parts are connected to a side away from the second slot of the two disconnecting parts respectively and are connected to the metal back cover. Each of the radiators connects the metal back cover to the corresponding disconnecting part over the first slot. The two radiators are disposed symmetrically based on the second slot. Each radiator is coupled with the corresponding disconnecting part, the corresponding connecting part, and the metal back cover to resonate a first, a second, and a third frequency band.

Abstract: A method of predicting therapeutic effects of a treatment for cognitive impairment for an individual using the individual's predicted age difference (PAD), the method comprising scanning the individual's brain with a scanning device so as to acquire at least one medical brain image at the beginning of the treatment; processing the medical brain image to obtain at least one feature of the image; generating a PAD value of the individual based on the at least one feature of the image; comparing the PAD value with a reference value; and predicting the therapeutic effects of the treatment for cognitive impairment using the comparison result of the PAD value and the reference value.

Abstract: A method of predicting therapeutic effects of a treatment for cognitive impairment for an individual using the individual's predicted age difference (PAD), the method comprising scanning the individual's brain with a scanning device so as to acquire at least one medical brain image at the beginning of the treatment; processing the medical brain image to obtain at least one feature of the image; generating a PAD value of the individual based on the at least one feature of the image; comparing the PAD value with a reference value; and predicting the therapeutic effects of the treatment for cognitive impairment using the comparison result of the PAD value and the reference value.

Abstract: A vehicle seat inter-connected tether assembly includes a first tether, a second tether and a vertically configured third tether positioned between the first tether and the second tether fixedly coupled to and connecting the first tether to the second tether. A connector positioned at distal ends of the first tether and the second tether is configured to couple the first tether and the second tether to opposed seat frame members of a vehicle seat frame.

Abstract: An electronic device includes gate lines, maintained at a low level voltage during a blank period and sequentially scanned during an active period in a frame period, and data lines. Voltage polarities of the data lines for all the blank period are respectively identical with voltage polarities of the data lines during the active period. A first level voltage applied to one of the data lines during all the blank period is related to an average value or a maximum value of level voltages of a portion or all of the data lines during the active period. A time length of the blank period in the frame period with the average value or the maximum value applied to one of the data lines during all the blank period is longer than a first time length of a first blank period in a first frame period adjacent to the frame period.