Abstract: A bond pad structure for use in wire bonding application during the packaging operation of semiconductor devices which contains a bond frame structure for holding the bond pad in place to prevent bond pad peel-off problem. The bond pad structure is a laminated structure containing a metal bond pad layer, a middle dielectric layer, and an underlying layer formed above a wafer surface. A guard band structure is formed in a spaced apart relationship from the metal bond pad layer which is connected to the underlying layer by a hole-fill. The underlying layer can be a metal layer, a semiconductor layer such as a polysilicon layer, or any material layer which has good adhesion with the hole fill material. The guard band structure exerts a downward force against the middle dielectric layer to help keeping the middle dielectric layer in place.

Abstract: A bond pad structure for use in wire bonding application during the packaging operation of semiconductor devices which contains a bond frame structure for holding the bond pad in place to prevent bond pad peel-off problem. The bond pad structure is a laminated structure containing a metal bond pad layer, a middle dielectric layer, and an underlying layer formed above a wafer surface. A guard band structure is formed in a spaced apart relationship from the metal bond pad layer which is connected to the underlying layer by a hole-fill. The underlying layer can be a metal layer, a semiconductor layer such as a polysilicon layer, or any material layer which has good adhesion with the hole fill material. The guard band structure exerts a downward force against the middle dielectric layer to help keeping the middle dielectric layer in place.

Abstract: A bond pad structure for use in wire bonding applications during the packaging of semiconductor devices with reduced bond pad lift-off problem. The bond pad structure contains: (a) a metal bond pad formed in an open window area surrounded by an edge portion of a dielectric layer; and (b) at least one dendritic sub-structure formed in the edge portion of the dielectric layer. The at least one dendritic sub-structure is formed of a metal material and is in contact with the metal bond pad. The dendritic sub-structure is a generally cross-shaped structure containing a first segment which is generally perpendicular to an edge of the metal bond pad to which the dendritic sub-structure is connected, and a second segment with is generally parallel to the edge. The dendritic sub-structure serves two main purposes.

Abstract: A bond pad structure for use in wire bonding applications during the packaging of semiconductor devices which minimizes the bond pad lift-off problem to provide improved stability. The bond pad structure contains: (1) a dielectric layer 4 formed on a first conductive layer 5; (2) a base conductive layer (whose outer boundary as viewed from the top is indicated as line 11) formed in the dielectric layer on top of the first conductive layer, the base conductive being extended to form an overhang layer (whose outer boundary is shown as line 13) which is disposed above the dielectric layer; and (3) at least one recessed portion 20 formed in the overhang layer. In a preferred embodiment, the bond pad is rectangular in shape and the recessed portion has the shape of an elongated rim that covers two corners of the base conductive layer.

Abstract: A bond pad structure for use in wire bonding applications during the packaging of semiconductor devices with reduced bond pad lift-off problem. It includes: (a) a laminated structure containing a metal bond pad layer, a dielectric layer, and an underlying layer formed on a wafer surface; and (b) a single anchoring structure formed in said dielectric layer connecting said metal bond pad layer and said underlying layer. The single anchoring structure contains a plurality of line segments that are interconnected so as to form said single anchoring structure. Unlike prior art anchoring structures, which always contain a plurality of anchors buried inside the dielectric, the bond pad structure contains only a single anchoring structure, which can have the geometry of an open or closed ring with whiskers, a coil, an open or closed square-waved ring, a tree structure, a grid-line structure, a meandering structure, a serpentine structure, a spiral structure, or a labyrinth.

Abstract: A bonding pad structure formed on a semiconductor substrate comprises an insulating layer, a conducting pad, a passivation layer, and a buffer layer. The insulating layer is formed on the semiconductor substrate. The conducting pad is formed on the insulating layer, and the passivation layer is formed to cover peripherals of the conducting pad forming an overhang region therebetween. However, the buffer layer is patterned and etched to form a plurality of either islands or openings between the insulating layer and the conducting pad but withon the range of the overhang region. Accordingly, peeling resistance ability can be enhanced via a form of mechanical interlocking. In addition, a portion of the overhang region can be wider than the other portion thereof in order to further intensify the adhesion between the conducting pad and the passivation layer.

Abstract: A bonding pad structure in accordance with the present invention is formed on a semiconductor substrate. The bonding pad structure comprises a buffer layer, a planarization layer, a conducting pad, and a passivation layer. The buffer layer is formed over the semiconductor substrate, and the planarization layer is thereafter formed on the buffer layer. The buffer layer is patterned and etched to shape a plurality of contact holes. The conducting pad is formed on the planarization layer and filled in the contact holes in order to mechanically interlock with the planarization layer. The passivation layer overlies peripherals of the conducting pad forming an overhang region therebetween. Moreover, the width of a portion of the overhang region close to a drawing direction may be enlarged so that the adhesion between the conducting pad and the passivation layer can be increased.

Abstract: A metallurgical joint structure between two workpieces to be joined by soldering or brazing includes a stress release layer of a low yield point metal, preferably silver, gold, copper, palladium or platinum. The joint structure also includes a juxtaposed barrier layer to prevent the diffusion of a solder element, such as tin, to the stress release layer. Preferred barrier layers are chromium, titanium-tungsten and tantalum. Preferably, the joint includes one or more stress relief layer and associated barrier layer combinations in the joint structure for improved joint reliability.