Abstract: The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.

Abstract: A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Abstract: A trialkylsilane-based silicon precursor compound may be expressed by Si(Ri)X, i=1-3, where each of “R1”, “R2”, and “R3” is a hydrogen or an alkyl having 1-5 carbon(s), all of “R1”, “R2”, and “R3” are not hydrogen, “X” is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3, and “R*” is a hydrogen or an alkyl group having 1˜5 carbon(s).

Abstract: The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.

Abstract: A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Abstract: A trialkylsilane-based silicon precursor compound may be expressed by the following chemical formula 1. In the chemical formula 1, each of “R1”, “R2”, and “R3” is a hydrogen or an alkyl having 1˜5 carbon(s), all of “R1”, “R2”, and “R3” are not hydrogen, “X” is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3, and “R*” is a hydrogen or an alkyl group having 1˜5 carbon(s).

Abstract: Disclosed herein is a light-responsive photocatalyst composition, which is a composite oxide semiconductor containing tungsten, and which can efficiently absorb visible light emitted from the sun and light emitted from interior lamps, such as fluorescent lamps, etc., and a method of preparing the light-responsive photocatalyst composition. The visible light-responsive photocatalyst composition can decompose volatile organic compounds or harmful organic matter causing sick house syndrome, even indoors, because it can be activated by visible light outdoors and can respond to light emitted from interior lamps, such as fluorescent lamps, etc.

Abstract: Disclosed herein is a light-responsive photocatalyst composition, which is a composite oxide semiconductor containing tungsten, and which can efficiently absorb visible light emitted from the sun and light emitted from interior lamps, such as fluorescent lamps, etc., and a method of preparing the light-responsive photocatalyst composition. The visible light-responsive photocatalyst composition can decompose volatile organic compounds or harmful organic matter causing sick house syndrome, even indoors, because it can be activated by visible light outdoors and can respond to light emitted from interior lamps, such as fluorescent lamps, etc.

Abstract: The present invention relates to a method and system for photocatalytically decomposing organic pollutants using the electromotive force of a solar cell. The present invention provides a method and system for decomposing organic pollutants, which can greatly increase the rate of decomposition of organic pollutants at low cost by combining a photocatalytic organic pollutant decomposition device, capable of decomposing organic pollutants using light energy, with a solar cell, capable of applying an external voltage to the photocatalytic organic pollutant decomposition device using light energy.