Abstract: A packet sequence restoring controller includes a recording device, a memory interface unit and a playback device. The recording device includes a first packet detector, a time stamp inserting unit and a first counting module. The playback device includes a second packet detector, a comparing unit, a time stamp deleting unit and a second counting module. Through the memory interface unit, the recording device and the playback device perform data access with an external memory. By recording arrival time of each packet, a live packet sequence is simulated and restored to optimize play quality of a recorded program.

Abstract: A packet sequence restoring controller includes a recording device, a memory interface unit and a playback device. The recording device includes a first packet detector, a time stamp inserting unit and a first counting module. The playback device includes a second packet detector, a comparing unit, a time stamp deleting unit and a second counting module. Through the memory interface unit, the recording device and the playback device perform data access with an external memory. By recording arrival time of each packet, a live packet sequence is simulated and restored to optimize play quality of a recorded program.

Abstract: Contamination due to deposited particulate matter has been greatly reduced in single wafer sputter-etchers by coating the full interior of the sputtering shield with a layer of an arc-sprayed material such as aluminum, said layer being possessed of a high degree of surface roughness. The method for forming the coating of arc-sprayed aluminum is described and data comparing particulate contaminant count and product yield before and after the adoption of the present invention, are presented.

Abstract: The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

Abstract: The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

Abstract: An automatic supervision system using an ion beam map generated by an ion implantation machine during an ion implantation process a feature extraction circuit and a data converter. The feature extraction circuit receives a beam current signal and a display blanking signal from the ion implantation machine, and extract features of the ion beam map. The data converter is coupled to the feature extraction circuit and converts the features into indexes indicative of the alignment and symmetry of beam maps. The data converter also compares the indexes to index values or symptoms of known abnormal ion beam scanning, which allows the data converter to recognize abnormal ion beam scanning and indicate the proper corrective action to adjust the ion beam scanning. Thus, the two-dimensional beam map recognition analysis is reduced to a one-dimensional feature analysis, thereby simplifying the beam map recognition process.

Abstract: An intelligent supervision system on the ion beam map during ion implantation process includes an ion implanter for introducing ions into a wafer, a feature extractor for receiving a beam current signal and a display blanking signal from the ion implanter to extract features of the beam current signal; a fuzzification subsystem for justifying confidence level on the features; and an expert system for recognizing symptoms of abnormal scanning and providing an indication thereof to a human operator. The expert system also provides an indication of appropriate corrective action, which an operator then uses to adjust the implantation process. Alternatively, the expert system may be configured to provide control signals directly to the ion implanter to adjust the implantation process without the need for an operator.