Abstract: A vehicular grader diagnoses a vehicle under test (“VUT”). The grader includes a vehicular interface for receiving vehicular component statuses from a vehicular diagnostic and reporting system of the VUT. The grader computes scores from these vehicular component statuses. These scores are computed utilizing statistical vehicular data associated with vehicles similar to the VUT, thereby enabling the grader to generate an overall vehicular health report incorporating these scores. In some embodiments, the grader utilizes the vehicular health report to provide an objective recommendation for a purchase decision, a rental decision, a lending decision or a repair versus replacement decision.

Abstract: A vehicle diagnostic system and a method are provided. The vehicle diagnostic system includes a receiving/processing module, and a database. The receiving/processing module is adapted for receiving the information related to a status of vehicle components from an OBD-II interface connected thereto. The information is then analyzed by a processing logic, so as to generate a vehicle health diagnostic report with respect to the corresponding vehicle components. In the vehicle health diagnostic report including the one or more table, in addition to enumerating the operation status of the vehicle components as “Pass/Fail”, there is also shown a testing result of the vehicle components, and there are also provided additional information and suggestions related to the vehicle components. The processing logic is stored in receiving/processing module and/or in the database.

Abstract: A vehicle diagnostic system and a method are provided. The vehicle diagnostic system includes a receiving/processing module, and a database. The receiving/processing module is adapted for receiving the information related to a status of vehicle components from an OBD-II interface connected thereto. The information is then analyzed by a processing logic, so as to generate a vehicle health diagnostic report with respect to the corresponding vehicle components. In the vehicle health diagnostic report including the one or more table, in addition to enumerating the operation status of the vehicle components as “Pass/Fail”, there is also shown a testing result of the vehicle components, and there are also provided additional information and suggestions related to the vehicle components. The processing logic is stored in receiving/processing module and/or in the database.

Abstract: A method and apparatus are provided for providing characterization data for semiconductor devices. A first data set containing measured results obtained from wafer electrical tests performed on the semiconductor device during the fabrication process is compared to a second data set containing values corresponding to design characteristics for the semiconductor device. Based on this comparison, semiconductor devices having valid and invalid performance characteristics are identified. The characterization results data are subsequently generated for the identified semiconductor devices.

Abstract: A method and apparatus for monitoring and reporting electrical test results for semiconductor wafer based on a knowledge base generated from user defined tables. A computer program fetches the test data from a wafer electrical tester, reads a test parameter specification table and computes various statistics for each parameter. Rules defining device failure modes are parsed to assemble boolean logic text strings. The logic is evaluated to generate boolean results. A pass/fail determination is made and the results are sent to process engineers for corrective action.

Abstract: In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising an oxide layer made by low pressure chemical vapor deposition at a temperature from about 600.degree. C. to about 850.degree. C. using SiH.sub.4 and N.sub.2 O, annealing in an NH.sub.3 atmosphere at a temperature from about 800.degree. C. to about 900.degree. C., and wet oxidizing using O.sub.2 and H.sub.2 at a temperature from about 820.degree. C. to about 880.degree. C.; forming a second polysilicon layer over the insulating layer; etching at least the first polysilicon layer, the second polysilicon layer and the insulating layer, thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, thereby forming at least one memory cell.

Abstract: In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising a first oxide layer over the first polysilicon layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein the second oxide layer is made by forming the second oxide layer by low pressure chemical vapor deposition at a temperature from about 600.degree. C. to about 850.degree. C. using SiH.sub.4 and N.sub.2 O and annealing in an N.sub.2 O atmosphere at a temperature from about 700.degree. C. to about 950.degree. C.