Abstract: An electronic system includes a fan module, a reference microphone, a micro speaker module, and an active noise cancellation controller. The micro speaker module provides a noise-cancellation signal according to a micro speaker control signal for canceling the noises generated during the operation of the electronic system. The reference microphone outputs a wide-band noise signal associated with the operation of the fan module. The active noise cancellation controller outputs a virtual error signal according to a first transfer function between the reference microphone and a physical microphone when the fan module operates with a predetermined fan speed, a second transfer function between the micro speaker module and the physical microphone when the fan module is not in operation, and the wide-band noise signal. The active noise cancellation controller provides the micro speaker control signal according to a synchronization signal, the wide-band noise signal and the virtual error signal.

Abstract: A resistive attenuator and a method for improving linearity of the resistive attenuator are provided. The resistive attenuator includes a first transistor, an attenuation circuit and a compensation circuit, wherein both the first transistor and the attenuation circuit are coupled between an input terminal and an output terminal of the resistive attenuator, and the compensation circuit is coupled to the first transistor. The first transistor is configured to provide a first signal path between the input terminal and the output terminal. The attenuation circuit is configured to provide a second signal path between the input terminal and the output terminal, wherein signal attenuation of the second signal path is greater than signal attenuation of the first signal path. The compensation circuit is configured to compensate nonlinear distortion caused by the first transistor.

Abstract: The present disclosure discloses a simulating interface system, which is assembled with an electronic device and has an interface module and a simulating module. The interface module is connected with an external electronic device, and receives connection signals from the external electronic device; and the simulating module is connected with the interface module, and has a simulating unit and a management unit, wherein the simulating unit is used to simulate a use authority of the electronic device, and the management unit adjusts the use authority to provide to the external electronic device based on the connection signals. The simulating unit analogizes the use authority of the electronic device, and the management unit adjusts the use authority to provide to the external electronic device based on the connection signals from the external electronic device, so as to achieve effective protection.

Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a second semiconductor fin protruding from the substrate, an isolation feature disposed on the substrate and on sidewalls of the first and second semiconductor fins, a gate structure disposed on the isolation feature. The semiconductor device also includes a dielectric fin disposed on the isolation feature and sandwiched between the first and second semiconductor fins. A middle portion of the dielectric fin separates the gate structure into a first gate structure segment engaging the first semiconductor fin and a second gate structure segment engaging the second semiconductor fin.

Abstract: An electronic system includes a fan module, an embedded controller, a reference microphone, an error microphone, an active noise cancellation controller, and a micro speaker module. The reference microphone is configured to output a wide-band noise signal associated with the operation of the fan module. The error microphone is configured to output an error signal by detecting the noise level during the operation of the electronic system. According to the wide-band noise signal, the error signal and the fan information provided by the embedded controller, the active noise cancellation controller calculates the narrow-band noises and the wide-band noises generated by the fan module, and drives the micro speaker module accordingly for providing a noise cancellation signal. The error signal may be reduced to zero by adaptively adjusting the noise cancellation signal for canceling the noises generated during the operation of the electronic system.

Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.

Abstract: A polyethylene terephthalate (PET) copolyester and a manufacturing method thereof are provided. The manufacturing method includes the following steps. A dispersion slurry including a talcum powder is formulated, wherein the talcum powder has an average particle size of 1 ?m to 50 ?m and an average specific surface area of 7 m2/g to 20 m2/g. Next, a terephthalic acid and an ethylene glycol are mixed, and the dispersion slurry and a crystallization accelerator are introduced, so as to carry out a transesterification reaction and therefore form a bis-2-hydroxylethyl terephthalate (BHET). Afterwards, a prepolymerization reaction and a polycondensation reaction are carried out to form a polyethylene terephthalate (PET) copolyester.

Abstract: A fog discrimination method is disclosed, including a capturing step, a calculation step, and a determining step. The capturing step includes capturing a sub-image of an image. The sub-image includes a light shield body image and a light shield stripe image. The calculation step includes calculating a maximum average grayscale value and a minimum average grayscale value of the sub-image; and calculating a fog function. The fog function is a function of the maximum average grayscale value and the minimum average grayscale value. The determining step includes determining whether the fog function is greater than or less than a threshold; and determining as being fogged when the fog function is less than the threshold.

Abstract: A method of fabricating a semiconductor structure includes selective use of a cladding layer during the fabrication process to provide critical dimension uniformity. The cladding layer can be formed before forming a recess in an active channel structure or can be formed after filling a recess in an active channel structure with dielectric material. These techniques can be used in semiconductor structures such as gate-all-around (GAA) transistor structures implemented in an integrated circuit.

Abstract: A speaker module includes a casing, a speaker unit and a loop tube. The speaker unit has a sound cavity, a first sound outlet and a second sound outlet. The speaker unit is disposed in the casing, and the speaker unit includes a diaphragm, and the diaphragm communicates with the first sound outlet. The loop tube is disposed in the casing, and the loop tube has a first end and a second end. The first end communicates with the sound cavity, and the second end communicates with the second sound outlet. The cross-sectional area of the second sound outlet and the loop tube is at least ten percent of the area of the diaphragm, and the ratio of the total length of the loop tube to the volume of the sound cavity is 2.5˜7.5.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure, and a source/drain (S/D) epitaxial layer formed in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a S/D silicide layer formed on the S/D epitaxial layer, and the S/D silicide layer has a first width, the S/D epitaxial layer has a second width, and the first width is smaller than the second width. The semiconductor structure includes a dielectric spacer between the gate structure and the S/D silicide layer, and a top surface of the dielectric spacer is lower than a top surface of the gate structure.

Abstract: An apparatus may include a heat pipe with a first portion residing in a first plane, a second portion residing in the first plane and a third portion positioned between the first portion and the second portion, the third portion residing in a second plane spaced-apart from the first plane. The apparatus further includes a base plate including an opening and a clip plate having a first region, a second region and a third region positioned between the first and the second regions. The third portion of the heat pipe is positioned within the opening, and the clip plate is coupled to the base plate such that i) the third region of the clip plate is in superimposition with the third portion of the heat pipe and ii) third region of the clip plate resides in the first plane.

Abstract: An antenna structure includes a metal mechanism element, a ground element, a feeding radiation element, a first radiation element, a second radiation element, a parasitic radiation element, a tuning circuit, and a nonconductive support element. The metal mechanism element has a slot. The metal mechanism element includes a first grounding portion and a second grounding portion. The slot is positioned between the first grounding portion and the second grounding portion. The feeding radiation element has a feeding point. The first radiation element is coupled to the feeding radiation element. The second radiation element is coupled to the feeding radiation element. The parasitic radiation element is coupled to the ground element. The parasitic radiation element is adjacent to the first radiation element and the second radiation element. The tuning circuit is coupled between the first grounding portion and the second grounding portion of the metal mechanism element.

Abstract: The present disclosure provides a privacy computing method based on homomorphic encryption, which includes steps as follows. The ciphertext data is received, where the ciphertext data has a floating-point homomorphic encryption data structure, and the floating-point homomorphic encryption data structure of the ciphertext data includes the ciphertext mantissa, exponent parameter and gain parameter. The gain parameter sets the precision of the floating point corresponding to the ciphertext mantissa. The exponent parameter is adapted to multiplication or division. The artificial intelligence model performs operations on the ciphertext data to return the ciphertext result.

Abstract: A computer system and an output adjusting method used for an audio output apparatus are provided. In the method, detecting the output power of the audio output apparatus while outputting the audio signal, counting the accumulated time of the audio output apparatus while the output power is greater than the reference power, determining whether the accumulated time meets a corresponding adjusting condition, and adjusting the current maximum output power into the target power gradually within the time range according to the determined result that the accumulated time meets the corresponding adjusting condition. The adjusting condition includes that the accumulated time is greater than or equal to the tolerated hearing time of the corresponding reference power. The target power is less than or equal to the reference power which meets the adjusting condition. The maximum output power is the upper limit of the output power of the audio output apparatus.

Abstract: An oral cavity scanning device is provided in the invention. The oral cavity scanning device includes an image capturing unit, an IMU circuit and a processing unit. The image capturing unit obtains a first image and a second image. The IMU circuit obtains IMU information corresponding to the first image and the second image. The processing unit obtains a distance value between the first image and the second image. The processing unit uses a contour algorithm to obtain a first contour and a second contour. The processing unit obtains first sampling points according to the first contour and second sampling points according to the second contour. The processing unit uses a feature algorithm to find relative feature points between the first sampling points and the second sampling points. The processing unit uses a depth information algorithm to obtain the depth information of each feature point.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.

Abstract: A container for containing food or liquid is provided. The container includes a body portion, a lid and an attachment. The lid is detachably disposed on the body portion. The attachment is configured to be disposed on the lid or the body portion and includes a magnetic attraction member and a connecting structure. The magnetic attraction member is adapted to be magnetically connected to a mobile electronic device. The connecting structure is disposed between the magnetic attraction member and the container for selectively fixing the magnetic attraction member at a first position or a second position. The connecting structure includes a fastening member, and the fastening member is adapted to be detachably fastened to the body portion or the lid.