Abstract: The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also includes forming a gate structure having a first dielectric and a first gate electrode on the fin structure and removing portions of the fin structure not covered by the gate structure. The method further includes partially etching exposed surfaces of the first nano-sheet layers to form recessed portions of the first nano-sheet layers in the fin structure and forming a spacer structure on the recessed portions. In addition, the method includes replacing the first gate electrode with a second dielectric and a second gate electrode, and forming an epitaxial structure abutting the fin structure.

Abstract: A thermoplastic elastomer foaming material is provided. The thermoplastic elastomer foaming material includes a hydrogenated styrenic/conjugated diene copolymer in a range from 5 to 35 weight percent; at least one of an acetate copolymer and an acrylate copolymer in a range from 3 to 30 weight percent; an amorphous polyolefin in a range from 20 to 60 weight percent; and a plasticizer in a range from 10 to 40 weight percent.

Abstract: A thermoplastic elastomer foaming material is provided. The thermoplastic elastomer foaming material includes a hydrogenated styrenic/conjugated diene copolymer in a range from 5 to 35 weight percent; at least one of an acetate copolymer and an acrylate copolymer in a range from 3 to 30 weight percent; an amorphous polyolefin in a range from 20 to 60 weight percent; and a plasticizer in a range from 10 to 40 weight percent.

Abstract: A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.

Abstract: A light emitting diode (LED) is added aluminum atom in every layer of InGaN light emitting diode to emit a UV light with wavelength between 300 nm and 380 nm which is not able to see by humans. This LED can co-operate with different colors of luminescent material layer or quantum well/quantum dot structures to emit different color (wavelength) of light, which are different colors (wavelengths) of LED.

Abstract: A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is applied to the LED to emit a first light by the first light emitting layer, the first light is used to excite the second light emitting layer and the third light emitting layer to generate the second light output and the third light output of different colors respectively. Then, the light output of a desired color can be generated by mixing the first light, the second light and the third light.