Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A foldable display device has a flexible display panel, a support module, and at least one positioning module. The support module has a middle platform and a pair of side platforms. The positioning module has a pair of positioning gears respectively fixed to the intermediate platform on a pair of gear axes parallel to each other and a pair of planetary gears respectively fixed to the pair of side platforms on a pair of gear axes parallel to each other. The pair of planetary gears are respectively engaged with the pair of positioning gears to respectively move around the pair of positioning gears along a pair of motion paths, so that the pair of side platforms are switched between a flattened state and a folded state with respect to the intermediate platform to flatten or bend the flexible display panel.

Abstract: A foldable display device has a flexible display panel, a support module, and at least one positioning module. The support module has a middle platform and a pair of side platforms. The positioning module has a pair of positioning gears respectively fixed to the intermediate platform on a pair of gear axes parallel to each other and a pair of planetary gears respectively fixed to the pair of side platforms on a pair of gear axes parallel to each other. The pair of planetary gears are respectively engaged with the pair of positioning gears to respectively move around the pair of positioning gears along a pair of motion paths, so that the pair of side platforms are switched between a flattened state and a folded state with respect to the intermediate platform to flatten or bend the flexible display panel.

Abstract: An equipment of manufacturing a bundle of electrospun yarn has a vortex containing device and a bundles collecting device. The vortex containing device has a feeding end, an exporting end and a vortex generator. The vortex generator is mounted in and communicates with the vortex containing device to form a fluid vortex in the vortex containing device to provide a guiding force. The guiding force draws an electrospun fiber into the feeding end of the vortex containing device. The electrospun fiber is wound to form a bundle of electrospun yarn by the fluid vortex. The bundles collecting device is rotated to collect the bundle of electrospun yarn.

Abstract: An equipment of manufacturing a bundle of electrospun yarn has a vortex containing device and a bundles collecting device. The vortex containing device has a feeding end, an exporting end and a vortex generator. The vortex generator is mounted in and communicates with the vortex containing device to form a fluid vortex in the vortex containing device to provide a guiding force. The guiding force draws an electrospun fiber into the feeding end of the vortex containing device. The electrospun fiber is wound to form a bundle of electrospun yarn by the fluid vortex. The bundles collecting device is rotated to collect the bundle of electrospun yarn.

Abstract: A metal mask manufacturing method includes: (a) disposing a first anti-etching layer having a first void region on a first face of a substrate; (b) disposing a second anti-etching layer on a second face of the substrate opposite to the first face, wherein a second void region of the second anti-etching layer is corresponding to the first void region; (c) performing a first etching on the first face and the second face to form a first concave part and a second concave part separated by a part of the substrate; (d) disposing a protecting layer filled into the first concave part; (e) performing a second etching from the second face to produce a void between the first concave part and the second concave part; (f) removing the second anti-etching layer; and (g) performing a third etching from the second face.

Abstract: A metal mask manufacturing method includes: (a) disposing a first anti-etching layer having a first void region on a first face of a substrate; (b) disposing a second anti-etching layer on a second face of the substrate opposite to the first face, wherein a second void region of the second anti-etching layer is corresponding to the first void region; (c) performing a first etching on the first face and the second face to form a first concave part and a second concave part separated by a part of the substrate; (d) disposing a protecting layer filled into the first concave part; (e) performing a second etching from the second face to produce a void between the first concave part and the second concave part; (f) removing the second anti-etching layer; and (g) performing a third etching from the second face.