Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A method for forming a solar cell with selective emitters is provided. The method for forming a solar cell with selective emitters includes providing a substrate; forming a first texture structure on a first surface of the substrate; performing a doping process to the first surface of the substrate to form a first doping region in the substrate; forming a pattered barrier layer in a second region on the first surface of the substrate, wherein another portion of the substrate in a first region is exposed; performing a second texture etching process to etch the first region of the substrate uncovered by the patterned barrier layer; removing the patterned barrier layer; and forming an electrode on the second region of the substrate.

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract: A back-contact heterojunction solar cell, having a first conductive type silicon substrate, a first amorphous semiconductor layer, a second amorphous semiconductor layer, a first conductive type semiconductor layer, a second conductive type semiconductor layer and a second conductive type doped region is introduced. The first amorphous semiconductor layer disposed on the illuminated surface of the silicon substrate is an intrinsic semiconductor layer or is of the first conductive type. The second amorphous semiconductor layer disposed on the non-illuminated surface of the silicon substrate is an intrinsic semiconductor layer. The first and the second conductive type semiconductor layers are disposed on the second amorphous semiconductor layer. The second conductive type doped region is located in the silicon substrate under the second conductive type semiconductor layer and is in contact with the second amorphous semiconductor layer.

Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2-20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.

Abstract: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.

Abstract: A solar cell structure includes a semiconductor substrate, a first electrode, a second electrode and at least one via extending through the semiconductor substrate. The first electrode is located in the at least one via, and includes a glass phase and lead oxide, wherein the lead oxide is present in a first weight percentage amount relative to the weight of the glass phase of the first electrode. The second electrode includes a glass phase and lead oxide, and covers the first electrode, wherein the lead oxide of the second electrode is present in a second weight percentage amount relative to the weight of the glass phase of the second electrode. The first weight percentage amount is less than the second weight percentage.

Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.

Abstract: A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H2O2 so as to form a nano-texturized silicon substrate.

Abstract: A backside electrode layer and a fabricating method thereof are applicable for fabricating a solar cell. The backside electrode layer includes a first electrode layer and a second electrode layer. The first electrode layer is formed on a substrate and has a thickness smaller than 15 ?m. The second electrode layer having patterns is formed on the first electrode layer. The first and second electrode layers are fabricated by a cofiring process. As the thickness of the first electrode layer is decreased and the second electrode layer is not a full coverage layer, the material usage of each electrode layer is reduced and the fabrication cost thereof is leveled down. Besides, a thinner electrode layer may avoid warp after the cofiring process.

Abstract: Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.

Abstract: Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.

Abstract: A process for producing stained crystallized glass and its articles is provided where crystallized glass is obtained with patterns and colors like that of granites, marble, and other natural stones. The process includes the heat-treatment of a prepared batch of crystallizable glass granules, colored powder and water, at a temperature higher than the softening point of the glass granules resulting in fusion bonding of the glass granules. The colored powder is compounded by an inorganic pigment, a suspension stabilizing agent, an agglomerate, a deflocculant agent, and a crystallizable glass powder. The surface pattern is formed by the grain boundary region of the crystallizable glass granules, and part of the inorganic pigment in the colored powder moving with the crystallizable glass powder.

Abstract: A flexible integrally produced toothpick structure for gum massaging and teeth cleaning purpose has one end provided with a fixed reverse U-shaped end having, parallel rung elements or cross elements disposed thereon or arc-shaped outward projections defined consecutively or alternatively on either side thereof. The reverse U-shaped end can be twisted in use so as to effectively bring out food residues stuck in between teeth. The opposite end of the toothpick is provided with a flat extension on which are disposed a number of V-shaped marks for massaging the gum; and a slant pointed projection in connection to the flat extension is used to pick out food residues left between molar teeth.

Abstract: A process for producing stained crystallized glass and its articles which is characterized in meeting production of various crystallized glass articles in small quantity. By this process, crystallized glass is obtained with patterns and colors alike to that of granites, marble, and other natural stones. The process of heat-treatment to a prepared batch compounded of crystallizable glass granules, color powder and water at a temperature higher than the softening point thereof results in fusion bonding of the glass granules. The color powder is compounded by inorganic pigment, suspension stabilizing agent, agglomerant, deflocculant agent, and crystallizable glass powder. The surface pattern is formed by grain boundary part of crystallizable glass granules, and part of the inorganic pigment in the color powder moving with the crystallizable glass powder.