Abstract: A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.

Abstract: A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure. This permits the spacing between color filter regions in between the grid structure to approach a near-zero spacing near the top surfaces of the color filter regions. The tight spacing of color filter regions provided by the angled or tapered grid structure provides a greater surface area and volume for incident light collection in the color filter regions. Moreover, the width of the grid structure may increase at least partially toward a bottom surface of the grid structure such that the wider dimension of the grid structure near the bottom surface of the grid structure provides optical crosstalk protection for the pixel sensors in the pixel array.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.

Abstract: An image processing method includes the following steps. A plurality of facial landmarks of a face frame are analyzed. A feature width is calculated according to the facial landmarks, and a head pose is analyzed according to the facial landmarks. The head pose is utilized to update the feature width to generate an updated width. A scale ratio of the updated width to an initial width is calculated. An object distance of a virtual camera is controlled according to the scale ratio. A two-dimensional image is captured from a virtual scene according to the object distance of the virtual camera.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: The present invention provides a seal ring structure, which comprises a seal ring member. The seal ring member includes a first ring opening on one side and a second ring opening on the other. A periphery of the first ring opening includes a plurality of leak grooves. When the seal ring member and the valve ball squeeze each other, the plurality of leak grooves can reduce the torque required to rotate the valve ball. A leak-groove length of the plurality of leak grooves is smaller than a seal-ring-member length of the seal ring member. The plurality of leak grooves do not penetrate the seal ring member for avoiding leakage of fluid.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: A memory device is provided, including an array of bit cells and a set of tracking cells. The set of tracking cells is arranged adjacent to the array of bit cells along a first direction. The set of tracking cells includes a set of first tracking cells configured to perform a read tracking operation and a set of second tracking cells configured to perform a write tracking operation and arranged adjacent to the set of first tracking cells along a second direction. First tracking cells in the set of first tracking cells are coupled in series with each other and arranged along the second direction, and second tracking cells in the set of second tracking cells are coupled in series with each other and arranged along the second direction.

Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.

Abstract: The present invention relates to a ruthenium complex represented by the following formula (I): RuL2(NCS)2Am??(I) wherein L, A and m are defined the same as the specification, and a photoelectric component using the same. The ruthenium complex of the present invention can be used in a Dye-Sensitized Solar Cell (DSSC). Hence, the photoelectric characteristics of the DSSC manufactured with the ruthenium complex of the present invention can be improved.

Abstract: The present invention relates to a ruthenium complex and a photoelectric component using the same, and the ruthenium complex is represented by the following formula (I): RuL2(NCS)2Am??(I) wherein L, A and m are defined the same as the specification. The ruthenium complex of the present invention is suitable for Dye-Sensitized Solar Cell (DSSC). Hence, the photoelectric characteristics of the DSSC manufactured with the ruthenium complex of the present invention can be improved.

Abstract: The present invention relates to a ruthenium complex represented by the following formula (I): RuL2(NCS)2Am ??(I) wherein L, A and m are defined the same as the specification, and a photoelectric component using the same. The ruthenium complex of the present invention can be used in a Dye-Sensitized Solar Cell (DSSC). Hence, the photoelectric characteristics of the DSSC manufactured with the ruthenium complex of the present invention can be improved.

Abstract: The present invention relates to a ruthenium complex and a photoelectric component using the same, and the ruthenium complex is represented by the following formula (I): RuL2(NCS)2Am??(I) wherein L, A and m are defined the same as the specification. The ruthenium complex of the present invention is suitable for Dye-Sensitized Solar Cell (DSSC). Hence, the photoelectric characteristics of the DSSC manufactured with the ruthenium complex of the present invention can be improved.

Abstract: A combined structure of a sports shoe and an in-line skate mainly comprises an in-line wheel device buried in the shoe bottom of a sports shoe. The in-line wheel device comprises a base, whereon a linkage set, a position plate, a wheel position mechanism and a torsion spring are combined in order at both sides by position pins and shaft bars and arrangement at each side is homologous with the other side such that wheels are set among two sides and arranged in in-line state. Besides, a control mechanism is combined to the rear of the base and can control wheels to be unfolded and taken in automatically such that the shoe body combined with an in-line wheel device can take wheels in the sole ordinarily for walking and running, and unfold wheels automatically when the user wants to take skating sport.

Abstract: A combined structure of a sports shoe and an in-line skate mainly comprises an in-line wheel device buried in the shoe bottom of a sports shoe. The in-line wheel device comprises a base, whereon a linkage set, a position plate, a wheel position mechanism and a torsion spring are combined in order at both sides by position pins and shaft bars and arrangement at each side is homologous with the other side such that wheels are set among two sides and arranged in in-line state. Besides, a control mechanism is combined to the rear of the base and can control wheels to be unfolded and taken in automatically such that the shoe body combined with an in-line wheel device can take wheels in the sole ordinarily for walking and running, and unfold wheels automatically when the user wants to take skating sport.