Patents by Inventor Ching-Lung Chan

Ching-Lung Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11995246
    Abstract: A method for touchless gesture recognition is provided. The method includes transmitting ultrasonic signals via a speaker. The method includes generating ultrasonic signals. The method includes receiving the reflected ultrasonic signals from an object via two or more microphones. The method includes computing a frequency shift according to the reflected ultrasonic signals. The method includes identifying a gesture that corresponds to a movement of the object according to the frequency shift. The method includes performing a function that corresponds to the gesture.
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: May 28, 2024
    Assignee: FORTEMEDIA, INC.
    Inventors: Yu-Xuan Xu, Ching-Lung Chan, Shih-Chung Wang, Yen-Son Paul Huang, Shih-Chin Gong
  • Publication number: 20240126374
    Abstract: A method for touchless gesture recognition is provided. The method includes transmitting ultrasonic signals via a speaker. The method includes generating ultrasonic signals. The method includes receiving the reflected ultrasonic signals from an object via two or more microphones. The method includes computing a frequency shift according to the reflected ultrasonic signals. The method includes identifying a gesture that corresponds to a movement of the object according to the frequency shift. The method includes performing a function that corresponds to the gesture.
    Type: Application
    Filed: February 13, 2023
    Publication date: April 18, 2024
    Inventors: Yu-Xuan XU, Ching-Lung CHAN, Shih-Chung WANG, Yen-Son Paul HUANG, Shih-Chin GONG
  • Patent number: 11948837
    Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Fu Yeh, Chin-Lung Chung, Shu-Wei Li, Yu-Chen Chan, Shin-Yi Yang, Ming-Han Lee
  • Patent number: D420676
    Type: Grant
    Filed: December 30, 1998
    Date of Patent: February 15, 2000
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Wen Wang, Ching-Lung Chan