Abstract: The system contains a first operation module connected to AC mains and a second operation module connected to a lighting device. The first operation module contains an activation switch, a first electricity detection unit, and a wireless transmitter. The second operation module contains a second electricity detection unit, a reset switch, and a wireless receiver. The first and second operation modules communicate through the wireless transmitter and receiver. When electricity provision is normal, the second operation module plays a dominant role in a wired mode. When the activation switch is engaged, the second operation module releases the dominant role to the first operation module, where the uninterruptible power supply system enters a wireless mode. To switch back to the wired mode, the second operation module is reset by the reset switch. The uninterruptible power supply system as such can be freely alternated between the wired and wireless modes.

Abstract: Provided is an LED control apparatus for controlling a color temperature of at least one LED light module, and the LED control apparatus includes an LED driver electrically connected to the LED light modules; a power conversion module; and a microcontroller unit electrically connected to the power conversion module to control a current output ratio of the LED driver; the microcontroller unit comprises a first control point connected to the LED driver and second and third control points connected to the LED modules; wherein the second and third control points are electrically connected to current controllers for controlling a current therethrough. By using the microcontroller connected to the LED driver to control the current outputs to the LED light modules, the current ratio of the LED light modules can be effectively controlled in order to change the color temperatures of the LED light modules.

Abstract: The present invention provides an LED control apparatus for controlling a color temperature of at least one LED light module, and the LED control apparatus comprises an LED driver electrically connected to the LED light modules; a power conversion module; and a microcontroller unit electrically connected to the power conversion module to control a current output ratio of the LED driver; the microcontroller unit comprises a first control point connected to the LED driver and second and third control points connected to the LED modules; wherein the second and third control points are electrically connected to current controllers for controlling a current therethrough. By using the microcontroller connected to the LED driver to control the current outputs to the LED light modules, the current ratio of the LED light modules can be effectively controlled in order to change the color temperatures of the LED light modules.

Abstract: An uninterrupted power supply and detection device wherein a light fixture operates with and is coupled to a driving and linking module and a power supply wire. The driving and linking module connected to the power supply wire can sense a voltage state on the power supply wire. At this time, operation of the light fixture can be controlled by a wired or wireless switch of a control unit. When the voltage state is abnormal, the electricity detecting unit set in the driving and linking module can detect a signal representing abnormal power supply. Thereby, backup power can be supplied for driving emergency illumination of a light emitting element of the light fixture. Accordingly, original operation performed in a general power supply system can be kept and backup power can be supplied to keep illumination of the light fixture when the normal power supply is interrupted.

Abstract: The illumination device contains a number of lamps and deterrent modules. Each deterrent module contains a reception unit for receiving a wired or wireless signal, and is configured in a lamp. Each lamp has a lighting member electrically connected to the deterrent module. When the deterrent module are activated, based on their respective configured times and modes, the deterrent modules control the lighting members of the lamps to turn on or off or to adjust its brightness or to remain on or off for a period of time, so as to create an impression that there are people moving and living in the household.

Abstract: The uninterruptible illumination system contains at least a lighting device and a power detection device which is connected to a power supply line. There is a light generation element and a driver and communication module in each lighting device. The power detection device is wireless-linked with the driver and communication module. The power detection device detects the electrical condition on the power supply line. When the voltage on the power supply line is normal, at least a light device is able to provide illumination. On the other hand, when the voltage on the power supply line is not normal or there is no electricity, the driver and communication module receives a signal from a wireless transmitter of the power detection device, the stored electricity of an electricity provision unit of the driver and communication module is used to maintain the operation of the light generation element.

Abstract: The automatic lighting system contains a lighting device, a control module controlling the lighting device, and a light switch through which the control module is connected to an in-house wiring in a series connection. The control module contains a power unit connecting the in-house wiring, a switch detection unit connecting the in-house wiring and the power unit, a control unit connecting the power unit and the switch detection unit, an activation unit connecting the power unit and the control unit, and a control switch connecting the in-house wiring and the control unit. The automatic lighting system provides an ordinary lighting mode functioning like an ordinary lamp and an automatic lighting mode which is triggered by ambient brightness, object movement, and preset schedule. A conventional automatic lighting could be directly replaced by a light device of the present invention without altering any existing wiring and switch configuration.

Abstract: The un-interruptible power supply system mainly contains an electricity detection device and a power supplying module. The electricity detection diction is connected to the in-house wiring and detects the state of electricity on the in-house wiring. If abnormality is detected, a wireless transmitter in the electricity detection device would radiate a wireless signal indicating such an abnormality. A wireless receiver in the power supplying module would receive the wireless signal and thereby activate auxiliary power provisioning. As such, the present invention is able to accurately maintain product operation as long as the power provisioning from the in-house wiring is normal, and to sustain the power provisioning precisely when there is a black out.

Abstract: An electronic lamp converter allows a lamp socket of a different specification to be converted into a lamp socket which can be connected to an LED lamp. Through an electronic converter, electronic parameters are converted, wherein the electronic converter is electrically connected with at least a special function unit which enables the LED lamp to have an effect of changing a light source. Therefore, through the special function unit, the LED lamp is provided with functions of light dimming, light blending, color modulation, light induction, supplying uninterruptable power and motion detection.

Abstract: The uninterruptible power supply and detection device contains a power detection member and a power supply member, both connected to a house mains. The power detection member contains an AC (alternate current) transformer, a power detection unit, and a wireless transmitter. The power supply member is configured with an electronic device and contains a power supply unit, a wireless receiver, a driver unit, and a charger unit. The power detection member continues to transmit control signal to the power supply member within a coverage range as long as electricity is detected on the house mains. When the power detection member does not detect electricity and stops transmitting control signal, the power supply member switches the electronic device to receive electricity from the power supply unit so that electronic device could continue its operation.

Abstract: An uninterruptible illuminator includes primarily a wireless transmitter and an illuminating drive module. The illuminating drive module contains wireless receivers, a drive module, a power supply device and a recharging device. The wireless transmitter transmits a result that a power signal is detected to the wireless receivers and continues providing the wireless receivers with a message whether the power signal is available, in a certain range of transmission. If the wireless receivers cannot receive the power signal, then the drive module which is connected with the wireless receivers will activate the power supply device to produce electricity to drive a lamp-set to continue producing light. Therefore, by the aforementioned structures, an original operating method in an ordinary power supply system can be maintained; and at a same time, a state of illumination of the illuminator can be maintained.

Abstract: The method includes patterning a first polysilicon layer on a substrate. A first dielectric having a first via hole is defined over the substrate. A second polysilicon layer is formed along the surface of the first dielectric layer and refilled into the first via hole. Then, an etching is used to etch the layer. A residual portion of the layer is located at the lower portion of the first via hole. An undoped polysilicon is then patterned on the first dielectric layer and along the surface of the first via hole. An isolation structure is then refilled into the first via hole. An oxide layer is formed on the first polysilicon, the first dielectric layer and the upper surface of isolation structure to act as the gate oxide of the TFT. Then, the oxide and the first dielectric layer are etched to define a second via hole. A further polysilicon layer is pattern on the first dielectric layer and refilled into the second via hole for defining the gate.

Abstract: A novel vertical poly load device in 4T SRAM and a method for fabricating the same are disclosed. The poly load structure is a vertical device formed on a buried contact. The poly load vertical device is constructed by forming a hollow in a planarized dielectric layer with a high temperature oxide layer on the walls of the hollow and with lightly doped n-type polysilicon in the hollow. The poly load is connected to the respective drain of the driver transistor through the buried contact and to the gate of the respective gate of the other driver transistor through a connecting line. The resistance of the poly load will increase, as the voltage of the buried contact becomes low thereby reducing the standby current.

Abstract: The method includes forming a first polysilicon on a substrate. Subsequently, a first dielectric layer is formed on the first polysilicon. A second polysilicon is pattern on the first dielectric layer, followed by depositing a second dielectric layer formed thereon. An etching is performed to etch the second dielectric layer, the second polysilicon layer through the first dielectric layer for generating an opening. An oxide layer is formed on the side-wall of the opening. A doped polysilicon layer is located at the lower portion of the opening. An undoped polysilicon layer is deposited on the second dielectric layer and refilled into the opening. An etching back is carried out to remove the layer over the second dielectric layer. A third polysilicon is patterned on the surface of the second dielectric layer. An isolation layer is deposited over the feature. A plurality of contact holes are generated in those isolation layers.

Abstract: An SRAM cell formed on a semiconductor substrate with low standby current is disclosed. The memory cell includes a first inverter, a second inverter cross-coupled to the first inverter to form a storage element, a first load device coupled to the first inverter, a second load device coupled to the second inverter, a first access transistor coupled to an output port of the first inverter, and a second access transistor coupled to an output port of the second inverter. In this memory cell, the first load device is placed over the second inverter with substantial overlapping therebetween, so that resistance of the first load device increases when an input of the second inverter is at a low potential, thereby decreasing a standby current of the first load device. Similarly, the resistance of the second load device increases when an input of the first inverter is at a low potential.

Abstract: A new method for forming shallow trench isolation is disclosed herein. A pad oxide layer and a silicon nitride layer are formed on a wafer, respectively. A plurality of trenches are created in the wafer. Then, a SAC layer is formed on an N-well. A BSG layer is formed on a P-well and the N-well. A thermal process is used to form a channel stop in the P-well. Then, the BSG layer and the SAC layer are removed. Subsequently, a LPD oxide layer is deposited in the trenches. Then, a CMP process is used to polish the LPD oxide layer for planarization. The pad oxide layer and the silicon nitride layer are removed. Next, a gate oxide layer is formed on the wafer.

Abstract: A method of making a complementary metal oxide semiconductor field effect transistor (CMOSFET) using liquid phase deposition. At first, a P-type silicon substrate is prepared, on which are formed a field oxide layer, a P-well, an N-well and a gate oxide layer. Next, a first polysilicon layer is formed. After doping the first polysilicon, a tungsten silicide layer is formed on the first polysilicon layer. Then, the first polysilicon layer and the tungsten silicide layer are patterned to form the polycide gate electrodes. With a mask shielding the area designated to be the N-channel FET, a P.sup.- type ion implant is performed. Then, a first silicon dioxide layer is formed by liquid phase deposition, followed by an anisotropic etching to form the first sidewall spacers. Then, a P.sup.+ type ion implant is performed. A second silicon dioxide layer is again formed by liquid phase deposition. Now, after removing the mask, an N.sup.- type ion implant is performed using the second silicon dioxide layer as a mask.

Abstract: A process for manufacturing a CMOS device is disclosed.

Abstract: An improved process for forming blanket planarization of the multilevel interconnection of a semiconductor substrate by LPD-SiO.sub.2 (Liquid-Phase Deposition) selective deposition technique which LPD-SiO.sub.2 is not deposited on silicon nitride, and forming silicon dioxide to achieve blanket planarization of multilevel interconnection.

Abstract: The present invention is a process used for fabricating a CMOS device, which includes (a) forming a first photoresist over the gate conducting layer, (b) define a first gate upon one of the p-type and the n-type MOS regions, (c) executing a first ion implantation in order to form a first lightly doped drain (LDD) on the one of the p-type and the n-type MOS regions, (d) forming a first gate sidewall on the first gate, (e) executing a second ion implantation in order to form a first source and a first drain on the one of the p-type and the n-type MOS regions, (f) forming a second photoresist over the gate conducting layer, (g) eliminating a portion of the second photoresist and another portion of the gate conducting layer in order to define a second gate upon the other one of the p-type and the n-type MOS regions, (h) performing a third ion implantation in order to form a second lightly doped drain (LDD) on the the other portion of the p-type and the n-type MOS regions, (i) selectively forming a specific oxide