Abstract: A method for measuring a thickness of a thin film includes: a step of basing on a training database to establish an artificial neural network, the training database including a plurality of modified spectra and a plurality of film thicknesses corresponding individually to the plurality of modified spectra; a step of measuring a sample having a coated film so as to obtain a spectrum; and, a step of running the artificial neural network already trained by the plurality of modified spectra so as to use the spectrum to estimate a thickness of the coated film on the sample. In addition, a system related to the method for measuring a thickness of a thin film is provided to include a measuring unit, a spectrometer and a processing unit.

Abstract: A method for manufacturing a solar control film includes: a step of applying an arc-plasma coating process to deposit a first dielectric layer on a soft substrate, the first dielectric layer containing Ti; a step of depositing a first metal layer on the first dielectric layer; a step of applying the arc-plasma coating process to deposit a second dielectric layer on the first metal layer, the second dielectric layer containing the Ti; a step of depositing a second metal layer on the second dielectric layer; and, a step of applying the arc-plasma coating process to deposit a third dielectric layer on the second metal layer, the third dielectric layer containing the Ti. In addition, a solar control film is also provided.

Abstract: A method for measuring a thickness of a thin film includes: a step of basing on a training database to establish an artificial neural network, the training database including a plurality of modified spectra and a plurality of film thicknesses corresponding individually to the plurality of modified spectra; a step of measuring a sample having a coated film so as to obtain a spectrum; and, a step of running the artificial neural network already trained by the plurality of modified spectra so as to use the spectrum to estimate a thickness of the coated film on the sample. In addition, a system related to the method for measuring a thickness of a thin film is provided to include a measuring unit, a spectrometer and a processing unit.

Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: A high frequency plasma apparatus includes a reaction chamber, a first electrode, a second electrode, and a plurality of feed points located at one of the two electrodes at least. The feed points are used to simultaneously generate a first standing wave and a second standing wave, with different temporal and spatial patterns. By adjusting amplitudes of the two standing waves and the temporal and spatial phase differences between the two standing waves appropriately, plasma uniformity of the high frequency plasma apparatus can be effectively improved.

Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: A gas isolation chamber comprises a vacuum chamber, a first body module, a second body module and a first temperature modulator. The vacuum chamber comprises a first chamber part, a second chamber part and at least one first gas valve unit. The first body module is disposed on the inner wall of the first chamber part and has a first gas hole corresponding to the position of the first gas valve unit. The first gas hole is connected to the first gas valve unit. The second body module is disposed on the inner wall of the second chamber part such that a slit channel can be formed between the second and the first body modules. The first temperature modulator is disposed in the first body module. The gas isolation chamber is further combined with the vacuum film process chambers to form a plasma deposition apparatus for proceeding continuous deposition process.

Abstract: An RF hollow cathode plasma source consists of a vacuum chamber, a pipe, a hollow cathode, at least two compartments, a conduit and input electrodes. The pipe is inserted into the chamber for introducing working gas into the chamber. The hollow cathode is disposed in the chamber and formed with a large number of apertures. At least two compartments are located below the hollow cathode. Each of the compartments includes small apertures for uniformly spreading the working gas into the apertures of the hollow cathode. The conduit is disposed along two sides of the hollow cathode to circulate cooling water around the hollow cathode. The plural input power leads are arranged near the hollow cathode. The input power leads, the pipe and the conduits are connected to the hollow cathode though the electrically-insulated walls of the grounded vacuum chamber.

Abstract: A hollow-cathode plasma generator includes a plurality of hollow cathodes joined together and connected to a power supply for generating plasma in vacuum. Each of the hollow cathodes includes at least one fillister defined therein, a fin formed on a side of the fillister, an air-circulating tunnel in communication with the fillister and a coolant-circulating tunnel defined therein. The fillister is used to contain working gas. The fin receives negative voltage from the power supply for ionizing the working gas to generate the plasma and spread the plasma in a single direction. The working gas travels into the fillister from the air-circulating tunnel. The coolant-circulating tunnel is used to circulate coolant for cooling the hollow cathode.