Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: When performing failure prediction on an optical transceiver, the output optical power and an operational current of a transmission optical sub-assembly in the optical transceiver are recorded during the operation of the optical transceiver. A first ratio is acquired by dividing the average slope of the operational current recorded at a current time period by the average slope of the operational current recorded at an earlier time period. A second ratio is acquired by dividing the absolute average value of the slope of the output optical power recorded at the earlier time period by the absolute average value of the slope of the output optical power recorded at the current time period. When it is determined that the product of the first ratio and the second ratio is greater than a threshold value, a failure notification including life prediction information is provided.

Abstract: A fiber-optic communication system includes a first optical transceiver and a second optical transceiver. First, the first optical transceiver is configured to transmit signals to the second optical transceiver using an optical transmission power having an initial value. When the optical receiving power inputted into the second optical transceiver is larger than the expected input power of the second optical transceiver, a power compensation value is acquired according to the optical receiving power and the expected input power. The first optical transceiver is configured adjust its optical transmission power according to the power compensation value and then transmit signals to the second optical transceiver using the adjusted optical transmission power.

Abstract: A heat dissipation system includes a cooling device, a condenser, a vapor conveying duct and a cooling liquid conveying duct. The cooling device includes a housing, and an orifice plate dividing an inner space of the housing into a liquid supply chamber and an evaporation chamber proximate to the heat source, and formed with multiple micro orifices each having a diameter ranging from 5 to 1000 micrometers. The condenser includes a fluid inlet, a condensing chamber and a fluid outlet. The vapor conveying duct connects a vapor outlet of the housing and the fluid inlet of the condenser. The cooling liquid conveying duct connects a cooling liquid inlet of the housing and a fluid outlet of the condenser.

Abstract: A method of fabricating a multi-layer electric probe. The method includes forming a first strip layer. The first strip layer has a first conductivity and a first mechanical strength. Then, a second strip layer is solidly adhered to a surface of the first strip layer to form a structural body, wherein the second strip layer has a second conductivity and a second mechanical strength. The combination of the second conductivity and the second mechanical strength with the first conductivity and the first mechanical strength produces the desired capabilities of enduring current and mechanical strength.

Abstract: A multi-layer electric probe, suitable for testing a to-be-tested device, includes a first strip layer and a second strip layer. The first strip layer has a first conductivity and a first mechanical strength. The second strip layer has a second conductivity and a second mechanical strength. The first strip layer and the second strip layer are solidly adhered together as a structural body so as to produce at least one of the desired capabilities of enduring current and mechanical strength. The multi-layer electric probe can further include at least a third strip layer having the capability of enduring current and the desired mechanical strength.

Abstract: A wafer-shipping device and a wafer storage method for protecting bonding pads from fluoridation. First, at least one through hole is drilled in the shipping box. The wafer is then placed in the shipping box. A packaging bag containing the shipping box is put into a vacuum packaging machine to remove air from the packaging bag and the shipping box. A dry inert gas is then introduced into the packaging bag and the shipping box until approaching atmospheric pressure as so to prevent the shipping box from collapse. The packaging bag is then sealed.

Abstract: A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.

Abstract: A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.

Abstract: A method of removing ALF defects on a device after pad etching process, comprising the steps of: (a) applying EKC solution substantially comprising hydroxylamine (HDA) to the device for about 30 min; (b) applying an intermediate rinse chemical, such as Isopropyl alcohol (IPA) or N-methyl pyrrolidone (NMP), to the device for about 0.5 min to 3 min; and (c) applying water to the device. The ALF defects are effectively removed in the method of the invention, and the bad wafers can be turned to the good ones. Consequently, the primary cost during the manufacture is greatly decreased.

Abstract: A composition suitable for removing a polymer residue on a substrate in post metal solvent strip process substantially comprises water, alkanolamine and a sugar alcohol, and the amount of water is improved to about 20%. To remove the polymer residue, the composition of the invention is applied on a substrate for about 5 min to 15 min at a temperature ranged from about 60° C. to 70° C. The lifetime of the composition is greatly extended from 12 hours to 48 hours by increasing the amount of water from 15% to 20%.

Abstract: A wafer-shipping device and a wafer storage method for protecting bonding pads from fluoridation. First, at least one through hole is drilled in the shipping box. The wafer is then placed in the shipping box. A packaging bag containing the shipping box is put into a vacuum packaging machine to remove air from the packaging bag and the shipping box. A dry inert gas is then introduced into the packaging bag and the shipping box until approaching atmospheric pressure as so to prevent the shipping box from collapse. The packaging bag is then sealed.

Abstract: A method for eliminating residual polymers for cleaning etched windows of bonding pads. The invention provides a wafer with etched bonding pad windows that is free of residual polymer. Residual polymers induce an increase in the defect rate of cleaning process and bonding process. The wet stripping process peels Polyimide pieces from the surface of the passivation layer to form residual polymers on the wafer. The present invention utilizes the O2-ashing process to eliminate the residual polymers on the wafer. The present invention not only prevents Al—F formation on the bonding pads but also eliminates the residual polymers on the wafer. Therefore, the present invention may enhance the yield rate of semiconductor manufacturing by reducing the defect rates. The present invention does not increase the cost of the cleaning process but does increase the quality of the semiconductor.

Abstract: A method of removing sidewall polymer fence of the dielectric layer, which is a wet strip process using acidic SC1 and CR solutions, and SC1 solution is applied before CR solution. SC1 solution substantially comprises ammonium hydroxide, sulfuric acid and water for removing sidewall polymer fence, and CR solution substantially comprises sulfuric acid and hydrogen peroxide for removing photo-resist. The key of the wet strip process of the invention is that SC1 solution is applied at a low temperature for reducing the oxide loss. The wet strip process of the invention can completely remove the sidewall polymer fence and reduce the oxide loss of the dielectric layer.