Patents by Inventor Chiou-hung Jang

Chiou-hung Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Focus-dose co-optimization based on overlapping process window
    Patent number: 10459345
    Abstract: A method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: October 29, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Stefan Hunsche, Chiou-Hung Jang, Marinus Jochemsen, Vito Tomasello
  • FOCUS-DOSE CO-OPTIMIZATION BASED ON OVERLAPPING PROCESS WINDOW
    Publication number: 20180074413
    Abstract: A method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.
    Type: Application
    Filed: February 23, 2016
    Publication date: March 15, 2018
    Inventors: Stefan HUNSCHE, Chiou-Hung JANG, Marinus JOCHEMSEN, Vito TOMASELLO
  • Sub-resolution assist features for photolithography with trim ends
    Patent number: 7569310
    Abstract: Sub-resolution assist features with trim ends are described for use in photolithography. A photolithography mask with elongated features is synthesized. A sub-resolution assist feature is applied to an end-to-end gap between the elongated features. Trim is applied to the ends of the sub-resolution assist feature, the trim connecting the sub-resolution assist feature to an end of a main feature, the trim having a narrower width than the remaining portion of the sub-resolution assist feature and the synthesized photolithography mask is modified to include the sub-resolution assist feature and trim.
    Type: Grant
    Filed: December 7, 2005
    Date of Patent: August 4, 2009
    Assignee: Intel Corporation
    Inventors: Charles H. Wallace, Chiou-hung Jang
  • Sub-resolution assist features for photolithography with trim ends
    Publication number: 20070128525
    Abstract: Sub-resolution assist features with trim ends are described for use in photolithography. A photolithography mask with elongated features is synthesized. A sub-resolution assist feature is applied to an end-to-end gap between the elongated features. Trim is applied to the ends of the sub-resolution assist feature, the trim connecting the sub-resolution assist feature to an end of a main feature, the trim having a narrower width than the remaining portion of the sub-resolution assist feature and the synthesized photolithography mask is modified to include the sub-resolution assist feature and trim.
    Type: Application
    Filed: December 7, 2005
    Publication date: June 7, 2007
    Inventors: Charles Wallace, Chiou-hung Jang