Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Abstract: In a disclosed inspection method, a substrate and an edge ring are placed on first and second regions, respectively. A first inspection circuit is connected to the substrate. The first inspection circuit has impedance. A second inspection circuit is connected to the edge ring. The second inspection circuit has impedance. A first electrical bias and a second electrical bias having a common bias frequency are applied to a first electrode in the first region and a second electrode in the second region, respectively. A voltage waveform of the substrate and a voltage waveform of the edge ring is acquired by using a waveform monitor.

Abstract: A detecting method includes: supplying a bias power to a lower electrode, and supplying a source power to an upper electrode or the lower electrode; and detecting an output value of a sensor attached to a chamber. The detecting the output value of the sensor includes (a) specifying a first phase of a bias waveform for each cycle of the bias waveform, (b) specifying a second phase of a source waveform after a predetermined first time elapses from a timing when the first phase is specified, and (c) sampling the output value of the sensor after a predetermined second time elapses from a timing when the second phase is specified. The steps (a) to (c) are repeated for each cycle of the bias waveform.

Abstract: A disclosed plasma processing apparatus includes a substrate support. The substrate support has a first region configured to support a substrate and a second region configured to support an edge ring. The first electrode is provided in the first region. The second electrode is provided in the second region. The first bias power source is connected to the first electrode via the first circuit. The second bias power source is connected to the second electrode via the second circuit. The second circuit has impedance higher than impedance of the first circuit at a common bias frequency of a first electrical bias generated by the first bias power source and a second electrical bias generated by the second bias power source.

Abstract: A plasma processing apparatus includes a chamber, a stage, a semiconductive ring, a power source, at least one conductive member, and a conductive layer. The chamber has a plasma processing space. The stage is disposed in the plasma processing space and has an electrostatic chuck. The semiconductive ring is disposed on the stage so as to surround a substrate placed on the stage, the semiconductive ring having a first face. The at least one conductive member is disposed in the stage and in electrical connection with the power source. The conductive layer is disposed on the first face of the semiconductive ring and in electrical connection with the at least one conductive member.

Abstract: The disclosed plasma processing apparatus includes a plasma processing chamber, a substrate support, a bias power source, and a radio frequency power source. The substrate support is disposed in the plasma processing chamber and includes an electrode. The bias power source is coupled to the electrode and configured to generate a bias power having a first frequency. The radio frequency power source is coupled to the plasma processing chamber and configured to generate a radio frequency power having a second frequency higher than the first frequency. The radio frequency power has a first power level in a first period within one cycle of the bias power and has a second power level lower than the first power level in a second period within one cycle of the bias power.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an edge ring disposed on the substrate support to surround a substrate on the substrate support; an actuator configured to vertically move the edge ring; a gas supply configured to supply a cleaning gas into the plasma processing chamber; a power source configured to supply a power to the substrate support; and a controller configured to: (a) maintain the edge ring at a first position spaced apart from the substrate support; and (b) supply a power to the substrate support while supplying the cleaning gas into the plasma processing chamber to generate a local plasma in a gap between the edge ring maintained at the first position and the substrate support, thereby cleaning the edge ring and the substrate support.

Abstract: In a disclosed plasma processing system, radio frequency power is supplied in a first period to generate plasma, and the power lever of the radio frequency power is set to a reduced power level in a second period. In the second period, bias power is applied to a lower electrode of a substrate support. The bias power changes a potential of the substrate within each cycle that is defined at a second frequency. In the second period, a direct-current voltage is applied to the upper electrode. The direct-current voltage is set such that within each cycle that is defined at the second frequency, a polarity thereof in a first sub-period is negative and an absolute value thereof in the first sub-period is larger than an absolute value thereof in a second sub-period.

Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

Abstract: A disclosed plasma processing apparatus includes a chamber, a substrate support, an electric path, and a measuring device. The substrate support is accommodated in the chamber. The electric path is coupled to or capacitively coupled to an edge ring on the substrate support. The measuring device measures an electrical characteristic value of the edge ring with a voltage applied to the edge ring on the substrate support through the electric path. The electrical characteristic value measured by the measuring device is variable in accordance with a thickness of the edge ring.

Abstract: Provided is a technique for stably applying a voltage to an edge ring. Provided is a substrate support including: a substrate mounting surface on which a substrate is mounted; an edge ring mounting surface on which an edge ring is mounted around the substrate mounting surface; and a conductive electrode formed on the edge ring mounting surface and configured to apply a voltage to the edge ring.

Abstract: In a plasma processing apparatus according to an embodiment, a first radio-frequency power supply is connected to a lower electrode of a substrate support provided within a chamber via a first matcher. The first radio-frequency power supply supplies first radio-frequency power for bias to the lower electrode. The second radio-frequency power supply is connected to a load via a second matcher. The second radio-frequency power supply supplies second radio-frequency power for plasma generation. A controller of the second matcher sets an impedance of a matching circuit of the second matcher such that a reflection from the load of the second radio-frequency power supply is reduced in a designated partial period within each cycle of the first radio-frequency power.

Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.

Abstract: A structure efficiently provides bias power to an object placed on a substrate support. A substrate support includes a dielectric portion and at least one electrode. The at least one electrode is located in the dielectric portion to provide bias power to an object placed on the dielectric portion.

Abstract: A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((?/4)+n?/2) by a fractional shortening (? is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.

Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.

Abstract: A plasma etching apparatus includes a chamber, a susceptor in the chamber, an electrostatic chuck provided on the susceptor, and a high frequency power supply for supplying a high frequency power for generating a plasma in the chamber. The plasma etching apparatus also includes a gas inlet port provided in the chamber and configured to supply an etching gas, and a ring disposed in an outer periphery of a substrate supported by the electrostatic chuck that is positioned over the susceptor. An inner diameter of the ring is larger than an outer diameter of the substrate. The ring is separately positioned at a separation distance over the susceptor. The substrate is etched by using the plasma generated by the high frequency power that is supplied by the high frequency power supply. The separation distance between the ring and the susceptor is adjustable when the substrate is etched.

Abstract: A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.