Patents by Inventor Chiu Ng

Chiu Ng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160285977
    Abstract: The present invention discloses methods and systems for transmitting a received packet at a first network node through an aggregated connection. The first network node determines session information of the received packet and determines whether a new tunnel needs to be selected for transmitting the received packet. When a new tunnel needs to be selected, a hash result is determined. The hash result is substantially based on the session information and the number of available tunnels. A first tunnel is determined for transmitting the received packet according to the hash result. The session information and tunnel ID of the first tunnel is then stored in a first database. The received packet is transmitted through the first tunnel. When a new tunnel need not be selected, a lookup is performed to determine a tunnel ID substantially based on the session information. The received packet is transmitted through the determined tunnel.
    Type: Application
    Filed: August 29, 2014
    Publication date: September 29, 2016
    Applicant: Pismo Labs Technology Limited
    Inventors: Kam Chiu Ng, Patrick Ho Wai Sung, Ying Kwan, Wan Chun Leung
  • Publication number: 20160278140
    Abstract: A method and system for a first node to transmit packets to a second none, comprising receiving a packet from a local area network (LAN) interface, inspecting the packet; determining whether the packet satisfies at least one packet condition; transmitting the packet through a predefined tunnel if the packet satisfies the at least one packet condition; transmitting the packet through a second tunnel if the packet does not satisfy the at least one packet condition. The predefined tunnel is a first tunnel and is established before the packet is received by the first node. The second tunnel belongs to a first tunnel group or a second tunnel group. The first tunnel, the second tunnel and other tunnels may together form an aggregated connection. Further, the use of predefined tunnel may be based on whether the packets satisfy a session condition.
    Type: Application
    Filed: June 25, 2014
    Publication date: September 22, 2016
    Applicant: PISMO LABS TECHNOLOGY LIMITED
    Inventors: Patrick Ho Wai Sung, Kit Wai Chau, Kam Chiu Ng, Wan Chun Leung, Ying Kwan, Martin Langmaid
  • Publication number: 20160260824
    Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes first and second control trenches extending through an inversion region having the second conductivity type into the drift region, each of the first and second control trenches being bordered by a cathode diffusion having the first conductivity type. In addition, the device includes an inter-trench structure situated in the drift region between the first and second control trenches.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
  • Publication number: 20160260823
    Abstract: There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes a control trench extending through an inversion region having the second conductivity type into the drift region, and bordered by a cathode diffusion having the first conductivity type. In addition, the device includes a deep sub-trench structure situated under the control trench. The deep sub-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the deep sub-trench structure.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
  • Publication number: 20160261504
    Abstract: The present invention discloses a method carried out by a first communications device for determining performance of a plurality of connections and selecting at least one first connection from the plurality of connections substantially based on performance. Data packets are then transmitted through the at least one first connection. The plurality of connections are aggregated to form an aggregated connection. The determining of performance is performed by transmitting evaluation packets through the plurality of connections. The evaluation packets are based on data packets that are received by the first communication device but have not yet been transmitted through the aggregated connection. The data packets may be designated for a host or node reachable through the aggregated connection. Alternatively, the evaluation packets may be based on predefined information when there are no data packets to be transmitted through the aggregated connection. The performance may be determined periodically.
    Type: Application
    Filed: July 14, 2014
    Publication date: September 8, 2016
    Applicant: PISMO LABS TECHNOLOGY LIMITED
    Inventors: Patrick Ho Wai Sung, Wan Chun Leung, Kit Wai Chau, Ying Kwan, Kam Chiu Ng
  • Publication number: 20160260825
    Abstract: There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) having a deep superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes a gate trench extending through a base having the second conductivity type into the drift region. In addition, the IGBT includes a deep superjunction structure situated under the gate trench. The deep superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the deep superjunction structure.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
  • Publication number: 20160260799
    Abstract: There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes first and second gate trenches extending through a base having the second conductivity type into the drift region, the first and second gate trenches each being bordered by an emitter diffusion having the first conductivity type. In addition, the IGBT includes an inter-trench superjunction structure situated in the drift region between the first and second gate trenches.
    Type: Application
    Filed: December 31, 2015
    Publication date: September 8, 2016
    Inventors: Florin Udrea, Alice Pei-Shan Hsieh, Gianluca Camuso, Chiu Ng, Yi Tang, Rajeev Krishna Vytla
  • Publication number: 20160234039
    Abstract: A method carried out at a network node for managing aggregated Virtual Private Network (VPN) connection. The network node establishes an aggregated VPN connection with a network element and determines a first uplink bandwidth limit and/or a first downlink bandwidth limit. The uplink bandwidth at the network node is limited to the first uplink bandwidth limit if the first uplink bandwidth limit is determined. The downlink bandwidth at the network node is limited to the first downlink bandwidth limit if the first downlink bandwidth limit is determined. The network node encapsulates first data packets in first encapsulating packets and then transmits the first encapsulating packets to the network element through the aggregated VPN connection within the first uplink bandwidth limit. The network node receives second encapsulating packets from the network element within the first downlink bandwidth limit, and then decapsulates second data packets from the second encapsulating packets.
    Type: Application
    Filed: December 10, 2013
    Publication date: August 11, 2016
    Inventors: Kam Chiu Ng, Patrick Ho Wai Sung, Kit Wai Chau
  • Publication number: 20160204238
    Abstract: There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) with buried depletion electrode. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. The IGBT also includes a plurality of deep insulated trenches with a buried depletion electrode and at least one gate electrode disposed therein. In addition, the IGBT includes an active cell including an emitter adjacent the gate electrode, and an implant zone, situated between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type. In one implementation, the IGBT may also include a dummy cell neighboring the active cell.
    Type: Application
    Filed: March 23, 2016
    Publication date: July 14, 2016
    Inventors: Yi Tang, Niraj Ranjan, Chiu Ng
  • Publication number: 20160191379
    Abstract: The present disclosure provides for devices, systems, and methods which optimize throughput of bonded connections over multiple variable bandwidth logical paths by adjusting a tunnel bandwidth weighting schema during a data transfer session in response to a change in bandwidth capabilities of one or more tunnels. By making such adjustments, embodiments of the present invention are able to optimize the bandwidth potential of multiple connections being used in a session, while minimizing the adverse consequences of reduced bandwidth issues which may occur during the data transfer session.
    Type: Application
    Filed: December 30, 2014
    Publication date: June 30, 2016
    Applicant: Pismo Labs Technology Limited
    Inventors: Patrick Ho Wai SUNG, Kam Chiu NG, Ho Ming CHAN
  • Patent number: 9369550
    Abstract: A method and system for using tunnel association information to allow network device to transfer and receive layer two packets through provide a layer two tunnel between different layer two networks through multiple network links. Layer 3 packets are used to encapsulate layer two packets. The tunnel association information includes a network link identification and a tunnel sequence number. The network link identification is used to identify the network link and virtual private tunnel said one or more layer three packets belonging to and the tunnel sequence number is used to identify the sequence of said one or mow layer three packets in a network link.
    Type: Grant
    Filed: November 11, 2011
    Date of Patent: June 14, 2016
    Assignee: PISMO LABS TECHNOLOGY LIMITED
    Inventors: Patrick Ho Wai Sung, Alex Wing Hong Chan, Kam Chiu Ng
  • Publication number: 20160155832
    Abstract: There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. In addition, such an IGBT may include deep insulated trenches extending from a semiconductor surface above the base layer, into the drift region, each of the deep insulated trenches having a buried emitter electrode disposed therein. The IGBT may further include an active cell including an emitter, a gate trench with a gate electrode disposed therein, and an implant zone situated, between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type.
    Type: Application
    Filed: January 20, 2016
    Publication date: June 2, 2016
    Inventors: Yi Tang, Niraj Ranjan, Chiu Ng
  • Patent number: 9299819
    Abstract: There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) with buried depletion electrode. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. The IGBT also includes a plurality of deep insulated trenches with a buried depletion electrode and at least one gate electrode disposed therein. In addition, the IGBT includes an active cell including an emitter adjacent the gate electrode, and an implant zone, situated between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type. In one implementation, the IGBT may also include a dummy cell neighboring the active cell.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: March 29, 2016
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Yi Tang, Niraj Ranjan, Chiu Ng
  • Publication number: 20160043969
    Abstract: The present invention discloses methods and systems for processing data packets received at a first network node and for processing encapsulating packets received at a second network node. The first network node receives data packets from its network interface. It then selects a first tunnel and selects none or at least one second tunnel according to a selection policy. Original encapsulating packets (OEPs) are transmitted to a second network node through the first tunnel and at least one duplicate encapsulating packet (DEP) is transmitted through the at least one second tunnel. The second network node receives an encapsulating packet with a global sequence number (GSN) through an aggregated connection. The second network node determines whether one or more data packets corresponding to the encapsulating packet have been received earlier. The second network node may then determine whether or not to forward the one or more data packets.
    Type: Application
    Filed: August 8, 2014
    Publication date: February 11, 2016
    Inventors: Patrick Ho Wai SUNG, Kam Chiu NG, Ho Ming CHAN
  • Patent number: 9258216
    Abstract: A method carried out by a first communications device for transmitting data packets, wherein the first communications device comprises a plurality of network interfaces. Data packets are transmitted through a first network interface when a first condition is satisfied, and through a second network interface when a second condition is satisfied. In one of the embodiments, the plurality of network interfaces are classified into a plurality of groups of network interfaces according to a first group of conditions, and the first network interface and second network interface belong to two different groups of network interfaces.
    Type: Grant
    Filed: July 5, 2013
    Date of Patent: February 9, 2016
    Assignee: PISMO LABS TECHNOLOGY LIMITED
    Inventors: Patrick Ho Wai Sung, Kam Chiu Ng, Wan Chun Leung
  • Patent number: 9245985
    Abstract: There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. In addition, such an IGBT may include deep insulated trenches extending from a semiconductor surface above the base layer, into the drift region, each of the deep insulated trenches having a buried emitter electrode disposed therein. The IGBT may further include an active cell including an emitter, a gate trench with a gate electrode disposed therein, and an implant zone situated, between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: January 26, 2016
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Yi Tang, Niraj Ranjan, Chiu Ng
  • Publication number: 20160020922
    Abstract: Methods and systems for transmitting and receiving data between a first node and a second node through a first tunnel group and a second tunnel group respectively. The first node transmits data to the second node mainly through a first tunnel group and receives data from the second node mainly through a second tunnel group. In some embodiments, the first node receives first IP packets from one of its LAN interfaces and then transmits encapsulated first IP packets and then are transmitted mainly through a first one or more WAN interfaces to the second node. The first node receives encapsulated second IP packets mainly from the second node through a second one or more of its WAN interfaces. Second IP packets are then de-capsulated and transmitted through one of the LAN interfaces of the first node.
    Type: Application
    Filed: March 3, 2014
    Publication date: January 21, 2016
    Applicant: PISMO LABS TECHNOLOGY LIMITED
    Inventors: Patrick Ho Wai Sung, Kit Wai Chau, Kam Chiu Ng, Wan Chun Leung, Ying Kwan
  • Publication number: 20150304116
    Abstract: A method carried out by a first communication gateway for transmitting broadcast data. Broadcast data is first received through a first network interface. The first communication gateway determines whether the broadcast data satisfies at least one condition, and forwards the broadcast data through at least one tunnel and through a second network interface to a second communication gateway if the broadcast data satisfies the at least one condition. The broadcast data is encapsulated in at least one encapsulating packet and the at least one encapsulating packet is decapsulated by the second communication gateway in order to retrieve the broadcast data. The broadcast data is then distributed by the second communication gateway to a second network.
    Type: Application
    Filed: October 28, 2013
    Publication date: October 22, 2015
    Inventors: Ho Ming CHAN, Chi Pan YIP, Kam Chiu NG
  • Publication number: 20150288487
    Abstract: The present invention discloses methods and systems for recreating missing data packets of a data session established between a first communications router and a second communications router through an aggregated connection. The first communications router receives data packets belonging to a data session from the second communications router through the aggregated connection. The data packets are destined to a first host reachable through the first communications router. The first communications router transmits the data packets to the first host and determines whether there is one or more missing data packets. If there is one or more missing data packets, the first communications router determines global sequence number(s) (GSN) and per tunnel sequence numbers (PTSN) of the one or more missing data packets and recreates payload(s) of the one or more missing data packet(s). One or more new data packets are then transmitted to the first host.
    Type: Application
    Filed: April 24, 2015
    Publication date: October 8, 2015
    Applicant: PISMO LABS TECHNOLOGY LIMITED
    Inventors: Ho Ming Chan, Patrick Ho Wai Sung, Kam Chiu Ng, Alex Wing Hong Chan, Kit Wai Chau
  • Publication number: 20150222452
    Abstract: A method of operating a communication system, comprising the steps of: receiving a first OSI layer two packet from a first network interface; determining transmission type of the first OSI layer two packet; determining whether to send a second OSI layer two packet according to the transmission type, origin and destination of the first OSI layer two packet; determining destination address and transmission type of the second OSI layer two packet when determined to send the second OSI layer two packet; and sending the second OSI layer two packet through a second network interface when determined to send the second OSI layer two packet; wherein when the first OSI layer two packet is encapsulated in at least one layer three packet, the second OSI layer two packet is not encapsulated in any OSI layer three packet; and wherein when the first OSI layer two packet is not encapsulated in any Open Systems Interconnection (OSI) layer three packet, the second OSI layer two packet is encapsulated in at least one OSI layer
    Type: Application
    Filed: December 12, 2012
    Publication date: August 6, 2015
    Applicant: Pismo Labs Technology Limited
    Inventors: Kam Chiu Ng, Yu Yeung, Ka Kei Liu