Abstract: Herein disclosed is a vertical-type field effect transistor having a parallel connection of a diode and a resistor between the gate bonding pad and the gate electrode of the transistor to adjust the switching speed of the transistor without changing the other properties of the transistor.

Abstract: A sense resistor is included in a semiconductor pellet constituting a MOS FET having current sensing terminal by providing a polysilicon film resistor between a source electrode and a Miller pad of the pellet. Any influence of external noise due to adaptive use of an external sense resistor is removed.

Abstract: A vertical MOSFET includes a base region formed on the surface of a drain region, a source region provided in the base region, a first semiconductor region provided on the surface of the drain region between portions of the base region, the first semiconductor region having the same conductivity type as the drain region and an impurity concentration higher than that of the drain region, a second semiconductor region of the opposite conductivity type provided in the first semiconductor region, a gate electrode provided on the base region surrounded by the source region and the first semiconductor region, and an insulating film provided on the second semiconductor region.