Abstract: A touch panel, having a viewing region and a peripheral region adjacent to at least one edge of the viewing region, includes a plurality of first axis electrodes, a plurality of second axis electrodes, and a plurality of first traces. The first axis electrodes are disposed in the viewing region and extend along a first direction. The second axis electrodes are disposed in the viewing region and extend along a second direction. The first direction is not parallel to the second direction. The first traces are at least partially disposed in the viewing region. Each of the first traces is electrically connected to at least one of the first axis electrodes. The first traces extend from the viewing region to the peripheral region.

Abstract: A display panel includes a substrate, a pixel array, and a plurality of shift registers. The pixel array is disposed on the substrate. The shift registers are disposed on the substrate for sequentially outputting a plurality of scanning signals to drive the pixel array. Each of the shift registers includes a pull-up transistor and a first reserve transistor. The pull-up transistor raises the voltage level of the corresponding scanning signal. A control terminal of the first reserve transistor is coupled to a control terminal of the pull-up transistor, and a second terminal of the first reserve transistor is coupled to a second terminal of the pull-up transistor. When the pull-up transistor in each of the shift registers has insufficient output ability, a first terminal of the first reserve transistor is coupled to a first terminal of the pull-up transistor.

Abstract: An active device array substrate includes a substrate, an active device, a gate driving circuit, and a scan line. A display area and a peripheral circuit area are defined on the substrate. The active device disposed on the substrate is located in the display area. The active device includes a width reduced gate, a source, and a drain. An overlapping area of the source and the width reduced gate of the active device forms a first capacitor. The gate driving circuit disposed on the substrate is located in the peripheral circuit area and includes a pull-up device having a gate, a source, and a width reduced drain. An overlapping area of the width reduced drain and the gate of the pull-up device forms a second capacitor. The scan line disposed on the substrate electrically connects the drain of the pull-up device and the gate of the active device.

Abstract: A thin-film transistor photosensor and a liquid crystal display (LCD) panel respectively utilize a dielectric layer having F—SiOC: H compound and a bump structure having F—SiOC: H compound so as to form a thin-film transistor photosensor having lower resistor-capacitor loading (RC loading) and an LCD panel having low-dielectric F—SiOC: H compound respectively. In addition, a method of forming a dielectric layer having F—SiOC: H compound utilizes gases including trimethyl silane, carbon tetrafluoride, argon, and oxygen for thin-film deposition process so as to form a low-k F—SiOC: H compound dielectric layer.

Abstract: A display panel includes a substrate, a pixel array, and a plurality of shift registers. The pixel array is disposed on the substrate. The shift registers are disposed on the substrate for sequentially outputting a plurality of scanning signals to drive the pixel array. Each of the shift registers includes a pull-up transistor and a first reserve transistor. The pull-up transistor raises the voltage level of the corresponding scanning signal. A control terminal of the first reserve transistor is coupled to a control terminal of the pull-up transistor, and a second terminal of the first reserve transistor is coupled to a second terminal of the pull-up transistor. When the pull-up transistor in each of the shift registers has insufficient output ability, a first terminal of the first reserve transistor is coupled to a first terminal of the pull-up transistor.

Abstract: A thin-film transistor photosensor and a liquid crystal display (LCD) panel respectively utilize a dielectric layer having F—SiOC: H compound and a bump structure having F—SiOC: H compound so as to form a thin-film transistor photosensor having lower resistor-capacitor loading (RC loading) and an LCD panel having low-dielectric F—SiOC: H compound respectively. In addition, a method of forming a dielectric layer having F—SiOC: H compound utilizes gases including trimethyl silane, carbon tetrafluoride, argon, and oxygen for thin-film deposition process so as to form a low-k F—SiOC: H compound dielectric layer.