Abstract: Methods for reliable interconnect structures between thin metal capture pads and TGV metallization and resulting devices are provided. Embodiments include forming a TGV in a glass substrate; filling with metal conductive paste; forming a metal layer on top and bottom surfaces of the substrate; patterning the metal layer, leaving at least a portion over the TGV top surface and an area surrounding the TGV; forming a dielectric layer on the metal layer and on the substrate top and bottom surfaces; patterning the dielectric layer, including exposing the metal layer over the TGV top surface and the area surrounding the TGV; forming a second metal layer on the dielectric layer and on the exposed portion of the first metal layer over the TGV top surface and the area surrounding the TGV; patterning the second metal layer exposing the dielectric layer; and forming a third metal layer on the second metal layer.

Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.

Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.

Abstract: Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.

Abstract: A method for etching features in an integrated circuit wafer, the wafer incorporating at least one dielectric layer is provided. Generally, the wafer is disposed within a reaction chamber. An etchant gas comprising a hydrocarbon additive and an active etchant is flowed into the reaction chamber. A plasma is formed from the etchant gas within the reaction chamber. The feature is etched in at least a portion of the dielectric layer.

Abstract: An etch that provides a high oxide to photoresist selectivity in a low-pressure, high-density plasma is provided. An extremely high reverse RIE lag is achieved, wherein the etching of small high-aspect ratio openings is possible, but that of large openings is not. A high-density plasma is generated so that carbon monoxide (CO) is ionized to CO+ so that at least 1 sccm equivalent of CO+ is provided. Excited CO neutrals (CO*) are also present within the plasma. Fluorocarbon and hydrofluorocarbon gases are also provided. The excited CO neutrals scavenge free fluorine, near the wafer surface and in the large openings, increasing polymer deposition on the photoresist and in the large openings thus reduce or stop etching in those regions.

Abstract: A method for etching features in an integrated circuit wafer, the wafer incorporating at least one dielectric layer is provided. Generally, the wafer is disposed within a reaction chamber. An etchant gas comprising a hydrocarbon additive and an active etchant is flowed into the reaction chamber. A plasma is formed from the etchant gas within the reaction chamber. The feature is etched in at least a portion of the dielectric layer.

Abstract: Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.

Abstract: Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than processes using N2/H2 chemistries, at similar process conditions. The difference is due to the much lower ionization potential of NH3 versus N2 in the process chemistry, which results in significantly higher plasma densities and etchant concentrations at similar process conditions.