Abstract: Boot firmware for a computing device can be modularly and dynamically composed to facilitate implementing changes and updates to a computing device's firmware. The firmware image can include a primary module, which is responsible for certain basic initializations, and a module list, which can include a listing of additional modules that are to be executed during the boot procedure. The module list can be used to identify and access the selected modules from a module library, such as via globally unique identifiers (GUIDs). Once acquired, the selected modules can be executed, taking into account required dependency modules (whether included in the selected modules or not) and configuration settings. The module library can be stored entirely locally (e.g., as part of a distributed firmware image), entirely remotely (e.g., accessible via network connection), or a mixture of locally and remotely.

Abstract: Boot firmware for a computing device can be modularly and dynamically composed to facilitate implementing changes and updates to a computing device's firmware. The firmware image can include a primary module, which is responsible for certain basic initializations, and a module list, which can include a listing of additional modules that are to be executed during the boot procedure. The module list can be used to identify and access the selected modules from a module library, such as via globally unique identifiers (GUIDs). Once acquired, the selected modules can be executed, taking into account required dependency modules (whether included in the selected modules or not) and configuration settings. The module library can be stored entirely locally (e.g., as part of a distributed firmware image), entirely remotely (e.g., accessible via network connection), or a mixture of locally and remotely.

Abstract: A heat sink having a heat pipe protection mechanism includes a heat pipe, a metallic sleeve and a plurality of heat-dissipating fins. The heat pipe has an evaporating section and a condensing section. The evaporating section is combined with a heat-dissipating base. The metallic sleeve has a closed end and an open end opposite to the closed end. The condensing section is disposed through the open end of the metallic sleeve. Each of the heat-dissipating fins has a through-hole corresponding to the heat pipe. The metallic sleeve having the condensing section disposed therein is fitted in the through-hole. By this arrangement, the condensing section is completely separated from the outside, so that the heat pipe can be protected from suffering damage due to external impacts or getting rusty. Thus, the lifetime of the heat pipe is maintained, and the frequency of repairing the heat sink is reduced.

Abstract: The present invention relates to the use of ginsenosides and a plant extract containing ginsenosides in a cosmetic or pharmaceutical composition or in a food supplement for the protection of the skin against deleterious effects of stress or irradiation e.g. sunlight or UV irradiation.

Abstract: This invention is forming the DMOS channel after CMOS active layer before gate poly layer to make the modular DMOS process step easily adding into the sub-micron CMOS or BiCMOS process. And DMOS source is formed by implant which is separated by a spacer self-aligned to the window for DMOS body. By this method, the performance of CMOS and bipolar devices formed original CMOS or BiCMOS process keeps no change. The product design kit, such as standard cell library of CMOS and BiCMOS, can be used continuously with no change.

Abstract: A lateral DMOS structure includes a light doped p-type region beneath and near the gate at the drain side. The electric field on the surface near the gate is reduced. Thus the electric field near the gate decreases, and the SOA (safe operating area) of the lateral DMOS device increases and long time reliability improves. Moreover, the lateral DMOS of the invention can be fabricated without increasing the manufacturing cost.

Abstract: The present invention relates to a lateral PNP transistor and the method of manufacturing the same. The medium doping N-type base area and the light doping P? collector area were first introduced in the structure before the formation of P+ doping emitter area and the collector area. The emitter-base-collector doping profile in the lateral and the base width of LPNP were similar to NPN. The designer can optimize the doping profile and area size of each area according to the request of the current gain (Hfe), collector-base breakdown voltage (BVceo), and early voltage (VA) of LPNP transistor. These advantages may cause to reduce the area and enhance performance of the LPNP transistor.

Abstract: A lateral DMOS structure includes a light doped p-type region beneath and near the gate at the drain side. The electric field on the surface near the gate is reduced. Thus the electric field near the gate decreases, and the SOA (safe operating area) of the lateral DMOS device increases and long time reliability improves. Moreover, the lateral DMOS of the invention can be fabricated without increasing the manufacturing cost.

Abstract: This invention is forming the DMOS channel after CMOS active layer before gate poly layer to make the modular DMOS process step easily adding into the sub-micron CMOS or BiCMOS process. And DMOS source is formed by implant which is separated by a spacer self-aligned to the window for DMOS body. By this method, the performance of CMOS and bipolar devices formed original CMOS or BiCMOS process keeps no change. The product design kit, such as standard cell library of CMOS and BiCMOS, can be used continuously with no change.

Abstract: The present invention discloses a high voltage and high frequency poly emitter bipolar structure with improved breakdown voltage performance. The advantage of the poly emitter bipolar structures is that the SOD coating layer can improve the breakdown voltage of a capacitor structure higher to be 6-8 volts. In addition, the poly emitter bipolar structure having the inter-level dielectric layer deposited by PECVD on the emitter and collector by optimizing PECVD deposition process condition to adjust the charge in the oxide of inter-level dielectric layer has a breakdown voltage higher than 30 volts.

Abstract: The present invention discloses a method for fabricating bipolar integrated circuits, wherein LOCOS technology is used to define the active regions needed by all elements so that the self-alignment of the associated layers can be realized, and implant resistor regions are also directly defined in the active regions by local oxide layers; after base regions have been driven in the wafer, the resistors are implanted into the wafer so that the cost of resistor photomasks can be saved; silicon nitride is adopted to be the material of the dielectric layers of the capacitors, and with the characteristic of a buffering oxide etchant that etches oxide faster than it etches silicon nitride, the conventional deposition sequence of the dielectric layer is changed so that the formation of the dielectric layer needs only a single photomask.

Abstract: Synthesizer and calibrating method utilizing same. The frequency synthesizer modulates input signals comprising a phase locked loop circuit. The phase locked loop circuit comprises a phase frequency detector for generating a first signal, a low pass filter for outputting a filtered control signal derived from the received first signal, a voltage control oscillator for generating an output signal with a first frequency based on the control signal, a frequency divider dividing the first frequency for output to the input terminal of the phase frequency detector, a modulator coupled to the frequency divider, a pre-emphasis filter receiving and filtering the input signal for output to the modulator, and an auto loop gain calibration circuit, receiving the control signal, and calculating a current gain of the control signal in accordance with the voltage of the control signal to compensate for the frequency response mismatch between the pre-emphasis filter and the frequency synthesizer.

Abstract: A solder mask manufacturing method adapted to apply a solder mask on a surface of a substrate of a circuit board, said surface is provided with a conductor pattern having an unsheltered portion and a sheltered portion which is covered by said solder mask. The method comprises the steps of: a) disposing a layer of semi-solid solder mask material having an expansion coefficient substantially the same as that of the substrate on the surface of said substrate to cover said copper conductor pattern, and a metal foil covering the material layer; b) applying pressure to the metal foil and applying baking treatment to cure the solder mask material in to solid; c) utilizing chemical solution and plasma etching to remove the metal foil and the solid solder mask material above the unsheltered portion of said copper conductor pattern respectively such that the unsheltered portion can be exposed; and d) using chemical solution to remove the residual metal foil.

Abstract: A fabrication method is applied to the bipolar integrated circuit, which combines with various patterns of the masks using in the different processes to form a combination mask. By using the combination mask, a silicon dioxide layer is etched to produce the open windows required in the different processes. Thereafter, according to the requirements of different processes, the unused windows are covered with photoresists to avoid the alignment errors resulted from the pattering and etching of different masks. Because the method doesn't need to reserve tolerance for alignment errors, the degree of integration of the semiconductor processes is enhanced and the cost of production is reduced.

Abstract: The present invention relates to a lateral PNP transistor and the method of manufacturing the same. The medium doping N-type base area and the light doping P? collector area were first introduced in the structure before the formation of P+ doping emitter area and the collector area. The emitter-base-collector doping profile in the lateral and the base width of LPNP were similar to NPN. The designer can optimize the doping profile and area size of each area according to the request of the current gain (Hfe), collector-base breakdown voltage (BVceo), and early voltage (VA) of LPNP transistor. These advantages may cause to reduce the area and enhance performance of the LPNP transistor.

Abstract: The present invention relates to a lateral PNP transistor and the method of manufacturing the same. The medium doping N-type base area and the light doping P? collector area were first introduced in the structure before the formation of P+ doping emitter area and the collector area. The emitter-base-collector doping profile in the lateral and the base width of LPNP were similar to NPN. The designer can optimize the doping profile and area size of each area according to the request of the current gain (Hfe), collector-base breakdown voltage (BVceo), and Early voltage (VA) of LPNP transistor. These advantages may cause to reduce the area and enhance performance of the LPNP transistor.

Abstract: A bimetal layer manufacturing method includes the procedure of: forming a first dielectric layer on the surface of a semiconductor substrate which has a first metal layer (conductive layer) of a selected pattern formed thereon; forming a SOG layer on the surface of the first dielectric layer; forming a second dielectric layer; forming required via holes on the foregoing layers until reaching the first metal layer; forming a linear layer from a dielectrics material through PECVD; removing unnecessary linear layer from selected locations through an anisotropic plasma etching process; finally forming a second metal layer on a selected surface of the linear layer where MIM capacitors to be formed, and forming connection plugs in the via openings without generating via hole poison.

Abstract: A printed circuit board having a permanent solder mask includes a substrate made of a glassfiber reinforced epoxy resin material. The top and bottom surfaces of the substrate are disposed thereon a conductive pattern respectively. An epoxy resin solder mask is coated on each surface of the substrate in such a way that the conductive pattern is divided into a sheltered portion covered by the solder mask and an unsheltered portion exposed outside. The solder mask also has an even and smooth outer surface with a micro-roughness ranging between 0.5 ?m˜10 ?m and an optimum thickness ranging between 2 ?m˜200 ?m.

Abstract: Synthesizer and calibrating method utilizing same. The frequency synthesizer modulates input signals comprising a phase locked loop circuit. The phase locked loop circuit comprises a phase frequency detector for generating a first signal, a low pass filter for outputting a filtered control signal derived from the received first signal, a voltage control oscillator for generating an output signal with a first frequency based on the control signal, a frequency divider dividing the first frequency for output to the input terminal of the phase frequency detector, a modulator coupled to the frequency divider, a pre-emphasis filter receiving and filtering the input signal for output to the modulator, and an auto loop gain calibration circuit, receiving the control signal, and calculating a current gain of the control signal in accordance with the voltage of the control signal to compensate for the frequency response mismatch between the pre-emphasis filter and the frequency synthesizer.

Abstract: A solder mask manufacturing method adapted to apply a solder mask on a surface of a substrate of a circuit board, said surface is provided with a conductor pattern having an unsheltered portion and a sheltered portion which is covered by said solder mask. The method comprises the steps of: a) disposing a layer of semi-solid solder mask material having an expansion coefficient substantially the same as that of the substrate on the surface of said substrate to cover said copper conductor pattern, and a metal foil covering the material layer; b) applying pressure to the metal foil and applying baking treatment to cure the solder mask material in to solid; c) utilizing chemical solution and plasma etching to remove the metal foil and the solid solder mask material above the unsheltered portion of said copper conductor pattern respectively such that the unsheltered portion can be exposed; and d) using chemical solution to remove the residual metal foil.